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81N30L-J-AA3-E-R [UTC]

Power Management Circuit;
81N30L-J-AA3-E-R
型号： 81N30L-J-AA3-E-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Management Circuit
文件： 总15页 (文件大小：206K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
81CXXX/81NXXX  
CMOS IC  
VOLTAGE DETECTORS WITH  
BUILT-IN DELAY TIME  
1
3
1
2
ꢀ
DESCRIPTION  
SOT-89  
SOT-23  
The UTC 81CXXX and 81NXXX series are good  
performance voltage detector and manufactured by CMOS  
technologies with highly accurate, low power consumption.  
A
delay circuit is built-in to each detector, therefore, peripherals  
are unnecessary and high density mounting is possible. Detect  
voltage is extremely accurate with minimal temperature drift.  
Both CMOS and N-channel open drain output configurations are  
available.  
1
SOT-223  
ꢀ
FEATURES  
1
TO-92  
*Highly Accurate : Detect voltage ± 2%  
*Built-In Delay time :  
1ms ~ 50ms,  
50ms ~ 200ms,  
200ms ~ 400ms,  
*Pb-free plating product number: 81CXXXL/81NXXXL  
*Detect Voltage Temperature Characteristics:  
TYP± 100ppm/℃  
*Wide Operating Voltage Range : 0.7V ~ 10.0V  
*Low Current Consumption : TYP 1.0 µA (VIN=2.0V)  
ꢀ
ORDERING INFORMATION  
CMOS:  
Order Number  
①:Delay Time  
Pin Assign.  
Package  
Packing  
Normal  
Lead Free Plating  
81CxxL-①-AA3-B-R  
81CxxL-①-AB3-E-R  
81CxxL-①-AE3-3-R  
81CxxL-①-AE3-5-R  
81CxxL-①-T92-D-B  
81CxxL-①-T92-E-B  
81CxxL-①-T92-D-K  
81CxxL-①-T92-E-K  
Duration  
Code  
1
O
O
O
G
I
2
G
I
3
I
81Cxx-①-AA3-B-R  
81Cxx-①-AB3-E-R  
81Cxx-①-AE3-3-R  
81Cxx-①-AE3-5-R  
81Cxx-①-T92-D-B  
81Cxx-①-T92-E-B  
81Cxx-①-T92-D-K  
81Cxx-①-T92-E-K  
SOT-223  
SOT-89  
SOT-23  
SOT-23  
TO-92  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Box  
Tape Box  
Bulk  
G
I
G
O
G
I
P
Q
R
1 ~ 50 ms  
50 ~ 200 ms  
200 ~ 400 ms  
I
O
G
O
G
TO-92  
O
I
TO-92  
G
I
TO-92  
O
Bulk  
N-Channel:  
Order Number  
①:Delay Time  
Pin Assign.  
Package  
Packing  
Normal  
Lead Free Plating  
81NxxL-①-AA3-B-R  
81NxxL-①-AB3-E-R  
81NxxL-①-AE3-3-R  
81NxxL-①-AE3-5-R  
81NxxL-①-T92-D-B  
81NxxL-①-T92-E-B  
81NxxL-①-T92-D-K  
81NxxL-①-T92-E-K  
Duration  
Code  
1
O
O
O
G
I
2
G
I
3
I
81Nxx-①-AA3-B-R  
81Nxx-①-AB3-E-R  
81Nxx-①-AE3-3-R  
81Nxx-①-AE3-5-R  
81Nxx-①-T92-D-B  
81Nxx-①-T92-E-B  
81Nxx-①-T92-D-K  
81Nxx-①-T92-E-K  
SOT-223  
SOT-89  
SOT-23  
SOT-23  
TO-92  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Box  
Tape Box  
Bulk  
G
I
G
O
G
I
H
J
K
1 ~ 50 ms  
50 ~ 200 ms  
200 ~ 400 ms  
I
O
G
O
G
TO-92  
O
I
TO-92  
G
I
TO-92  
O
Bulk  
Note: 1. Pin assignment: I:Vin O:Vout G:Vss  
2.xx: Output Voltage, refer to Marking Information.  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
ORDERING INFORMATION(Cont.)  
1
81CxxL- -AB3-x-R  
(1) R: Tape Reel, B: Tape Box, K: Bulk  
(2) refer to Pin Assignment  
(3) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23,  
T92: TO-92  
(1)Packing Type  
(2)Pin Code  
(3)Package Type  
(4)Delay Time  
(5)Lead Plating  
1
(4) :refer to Delay Time  
(5)L: Lead Free Plating, Blank: Pb/Sn  
(6)Output Voltage Code  
(7)Output Configuration  
(6) xx: refer to Marking Information  
(7) C: CMOS, N: N-Cannel  
ꢀ
MARKING INFORMATION  
PACKAGE  
VOLTAGE CODE  
MARKING  
Voltage Code  
Lead Plating  
C:CMOS  
N:N-Channel  
10:1.0V  
11:1.1V  
12:1.2V  
13:1.3V  
14:1.4V  
15:1.5V  
16:1.6V  
17:1.7V  
18:1.8V  
19:1.9V  
20:2.0V  
21:2.1V  
22:2.2V  
23:2.3V  
24:2.4V  
25:2.5V  
81XXXX  
26:2.6V  
27:2.7V  
28:2.8V  
29:2.9V  
30:3.0V  
31:3.1V  
32:3.2V  
33:3.3V  
34:3.4V  
35:3.5V  
36:3.6V  
37:3.7V  
38:3.8V  
39:3.9V  
SOT-223  
Pin Code  
Date Code  
40:4.0V  
41:4.1V  
42:4.2V  
43:4.3V  
44:4.4V  
45:4.5V  
46:4.6V  
47:4.7V  
48:4.8V  
49:4.9V  
50:5.0V  
1
2
3
Date Code  
Lead Plating  
Voltage Code  
81XXXX  
SOT-89  
TO-92  
C:CMOS  
N:N-Channel  
1
2
3
C:CMOS  
N:N-Channel  
UTC  
81XXXX  
Lead Plating  
Voltage Code  
Date Code  
Pin Code  
1
2
3
PACKAGE INTEGER* CODE DECIMAL** CODE  
MARKING  
1.  
2.  
3.  
4.  
5.  
6.  
1
2
3
4
5
6
.0  
.1  
.2  
.3  
.4  
.5  
.6  
.7  
.8  
.9  
A
B
C
D
E
F
3
Month  
SOT-23  
Voltage Code  
Lead Plating  
Pin Code  
G
H
J
2
1
K
*
Represents the integer of the Detect Voltage  
** Represents the decimal number of the Detect Voltage  
ꢀ
EXAMPLE:  
81C27P  
3
81N27H  
3
Month (January )  
Month (May)  
L:Pb-free  
2 H A L  
2 H E  
L
L:Pb-free  
Pin Code  
Voltage Code  
Voltage Code  
Pin Code  
2
1
2
1
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QW-R502-039,J  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
BLOCK DIAGRAM  
VIN  
Delay  
Circuit  
V
OUT  
VREF  
Vss  
CMOS Output  
VIN  
VOUT  
Delay Circuit  
V
REF  
Vss  
N-channel Open Drain Output  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)  
PARAMETER  
SYMBOL  
VIN  
RATINGS  
UNIT  
V
Input Voltage  
12  
50  
Output Current  
IOUT  
mA  
CMOS  
N-Ch open drain  
SOT-223  
SOT-23  
VSS-0.3 ~ VIN+0.3  
Output Voltage  
VOUT  
V
VSS-0.3 ~ 9  
800  
150  
Power Dissipation  
PD  
mW  
SOT-89  
500  
TO-92  
300  
Operating Temperature  
Storage Temperature  
TOPR  
TSTG  
-30 ~ +80  
℃
℃
-40 ~ +125  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ꢀ
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
15  
UNIT  
SOT-223  
SOT-23  
SOT-89  
TO-92  
200  
100  
45  
Thermal Resistance Junction-Case  
θJC  
℃/W  
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃)  
Detection voltage (1.0V ~ 1.9V)  
PARAMETER  
SYMBOL CIRCUIT  
TEST CONDITIONS  
MIN  
DF (T)  
X0.98  
VDF  
X0.02  
0.7  
TYP  
MAX UNIT  
V
V
DF (T)  
X1.02  
VDF  
Detect Voltage  
VDF  
1
VDF (T)  
V
V
VDF  
Hysteresis Range  
Operating Voltage  
Supply Current  
VHYS  
VIN  
1
1
2
X0.05 X0.08  
10.0  
VDF=1.6V ~ 6.0V  
VIN=1.5V  
VIN=5.0  
V
0.9  
2.0  
2.6  
4.2  
µA  
µA  
ISS  
N-ch  
3
4
mA  
VDS=0.5V, VIN =1.0V  
2.2  
Output Current  
IOUT  
P-ch  
VDS=2.1V, VIN=8.0V  
-15.4  
mA  
(CMOS output)  
VDF  
∆VDF  
∆TOPR×VDF  
ppm/℃  
±100  
Temperature Characteristics  
Transient Delay Time  
(VDR  
V
IN changes from  
tDLY  
*
5
50  
200  
ms  
ꢁVOUT inversion)  
0.6V ~ 10V  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)  
Detection voltage (2.0V ~ 2.9V)  
PARAMETER  
SYMBOL CIRCUIT  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
V
X0.98  
VDF  
X0.02  
0.7  
DF (T)  
V
DF (T)  
X1.02  
VDF  
Detect Voltage  
VDF  
1
V
DF (T)  
V
V
VDF  
Hysteresis Range  
Operating Voltage  
Supply Current  
VHYS  
VIN  
1
1
2
X0.05 X0.08  
10.0  
VDF=1.6V ~ 6.0V  
VIN=2.0V  
VIN=5.0V  
N-ch  
V
1.0  
2.0  
3.0  
4.2  
µA  
µA  
ISS  
3
4
VDS=0.5V, VIN =2.0V  
7.9  
mA  
mA  
Output Current  
IOUT  
P-ch  
VDS=2.1V, VIN=8.0V  
-15.4  
(CMOS output)  
VDF  
∆VDF  
∆TOPR×VDF  
ppm/℃  
±100  
Temperature Characteristics  
Transient Delay Time  
(VDR  
V
IN changes from  
tDLY  
*
5
50  
200  
ms  
ꢁVOUT inversion)  
0.6V ~ 10V  
Detection voltage (3.0V ~ 3.9V)  
PARAMETER  
SYMBOL CIRCUIT  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
V
DF (T)  
X0.98  
VDF  
V
DF (T)  
X1.02  
VDF  
Detect Voltage  
VDF  
1
V
DF (T)  
VDF  
V
V
Hysteresis Range  
Operating Voltage  
Supply Current  
VHYS  
VIN  
1
1
2
X0.02  
0.7  
X0.05 X0.08  
10.0  
VDF=1.6V ~ 6.0V  
VIN =3.0V  
VIN =5.0V  
N-ch  
V
1.3  
2.0  
3.4  
4.2  
µA  
µA  
ISS  
3
4
mA  
VDS=0.5V, VIN =3.0V  
10.1  
Output Current  
IOUT  
P-ch  
VDS=2.1V, VIN=8.0V  
-15.4  
mA  
(CMOS output)  
VDF  
∆VDF  
∆TOPR×VDF  
ppm/℃  
±100  
Temperature Characteristics  
Transient Delay Time  
(VDR  
V
IN changes from  
tDLY  
*
5
50  
200  
ms  
ꢁVOUT inversion)  
0.6V ~ 10V  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)  
Detection voltage (4.0V ~ 4.9V)  
PARAMETER  
SYMBOL CIRCUIT  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
V
X0.98  
VDF  
X0.02  
0.7  
DF (T)  
V
DF (T)  
X1.02  
VDF  
Detect Voltage  
VDF  
1
V
DF (T)  
VDF  
V
V
Hysteresis Range  
Operating Voltage  
Supply Current  
VHYS  
VIN  
1
1
2
X0.05 X0.08  
10.0  
VDF=1.6V ~ 6.0V  
VIN=4.0V  
VIN=5.0V  
N-ch  
V
1.5  
2.0  
3.8  
4.2  
µA  
µA  
ISS  
3
4
VDS=0.5V, VIN=4.0V  
11.5  
mA  
mA  
Output Current  
IOUT  
P-ch  
VDS=2.1V, VIN=8.0V  
(CMOS output)  
-15.4  
VDF  
∆VDF  
∆TOPR×VDF  
ppm/℃  
±100  
Temperature Characteristics  
Transient Delay Time  
(VDR  
V
IN changes from  
tDLY  
*
5
50  
200  
ms  
ꢁVOUT inversion)  
0.6V ~ 10V  
Detection voltage (5.0V)  
PARAMETER  
SYMBOL CIRCUIT  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
V
DF (T)  
X0.98  
VDF  
V
DF (T)  
X1.02  
VDF  
Detect Voltage  
VDF  
1
1
V
DF (T)  
VDF  
V
V
Hysteresis Range  
VHYS  
X0.02  
0.7  
X0.05 X0.08  
10.0  
Operating Voltage  
Supply Current  
VIN  
ISS  
1
2
3
VDF=1.6V ~ 6.0V  
VIN=5.0V  
V
2.0  
4.2  
µA  
mA  
N-ch VDS=0.5V, VIN =5.0V  
P-ch  
13.0  
Output Current  
IOUT  
4
VDS=2.1V, VIN=8.0V  
-15.4  
±100  
mA  
(CMOS output)  
VDF  
∆VDF  
∆TOPR×VDF  
ppm/℃  
Temperature Characteristics  
Transient Delay Time  
VIN changes from  
tDLY  
*
5
50  
200  
ms  
(VDR  
ꢁVOUT inversion)  
0.6V ~ 10V  
VDF (T): established detect voltage value  
Release Voltage: VDR = VDF + VHYS  
* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.  
Note: The power consumption during power-start to output being stable (release operation) is 2 µA greater than it is  
after that period (completion of release operation) because of delay circuit through current.  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
TEST CIRCUITS  
100kΩ  
1-1  
1-2  
VOUT  
VSS  
VOUT  
VSS  
V
IN  
V
IN  
V
IN  
V
IN  
+
-
+
-
V
V
V
V
Cmos Output  
N-channel Open Drain Output  
2
3
A
V
IN  
VOUT  
VSS  
VIN  
VOUT  
Vss  
A
VIN  
+
VDS  
-
V
IN  
+
-
+
-
4
5-1  
V
VDS  
+
-
VOUT  
Vss  
V
IN  
VOUT  
Vss  
A
V
IN  
Measurement  
waveform  
IN  
V
IN  
+
-
Cmos Output  
5-2  
100kΩ  
V
IN  
VOUT  
Vss  
V
IN  
Measurement  
waveform  
N-channel Open Drain Output  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS  
(1) AMBIENT TEMPERATURE vs. TRANSIENT DELAY TIME  
81C30Q  
81C30R  
400  
320  
240  
200  
150  
100  
50  
160  
80  
70  
50  
-30  
-10  
10  
30  
70  
-30  
-10  
10  
30  
50  
Ambient Temp., Ta ( ℃)  
Ambient Temp., Ta ( ℃)  
81C30P  
50  
40  
30  
20  
10  
0
30  
50  
-30  
-10  
10  
70  
Ambient Temp., Ta ( ℃)  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)  
(2) P-CHANNEL DRIVER OUTPUT CURRENT vs. INPUT VOLTAGE  
81C27Q  
81C33Q  
20  
18  
16  
14  
12  
10  
8
20  
Ta=25℃  
Ta=25℃  
18  
V
DS=2.1V  
V
DS=2.1V  
16  
14  
12  
10  
8
1.5V  
1.5V  
1.0V  
0.5V  
1.0V  
0.5V  
6
6
4
4
2
0
2
0
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
Input Voltage, VIN (V)  
Input Voltage, VIN (V)  
81C44Q  
20  
18  
Ta=25℃  
VDS=2.1V  
16  
14  
1.5V  
12  
10  
1.0V  
0.5V  
8
6
4
2
0
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
Input Voltage, VIN (V)  
(2) TRANSIENT DELAY TIME vs. INPUT VOLTAGE  
81C33Q  
230  
Ta=25℃  
200  
170  
140  
110  
80  
50  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
Input Voltage, VIN (V)  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)  
(3) SUPPLY CURRENT vs. INPUT VOLTAGE  
81N16  
81N25  
4.0  
4.0  
3.0  
2.0  
3.0  
Ta=80℃  
Ta=80℃  
2.0  
25℃  
25℃  
1.0  
1.0  
0.0  
0.0  
0
2
4
6
10  
0
2
4
6
8
10  
10  
10  
8
Input Voltage, V IN (V)  
81N27  
Input Voltage, VIN (V)  
81N28  
4.0  
3.0  
2.0  
4.0  
3.0  
2.0  
Ta=80℃  
Ta=80℃  
25℃  
25℃  
1.0  
0.0  
1.0  
0.0  
0
2
4
6
8
(V)  
10  
0
2
4
6
8
Input Voltage, VIN  
81N29  
Input Voltage, V IN (V)  
81N30  
4.0  
3.0  
2.0  
4.0  
3.0  
2.0  
Ta=80℃  
Ta=80℃  
25℃  
25℃  
1.0  
0.0  
1.0  
0.0  
0
2
4
6
8
10  
0
2
4
6
8
Input Voltage, VIN (V)  
Input Voltage, VIN (V)  
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81CXXX/81NXXX  
CMOS IC  
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)  
81N33  
81N35  
4.0  
3.0  
2.0  
4.0  
3.0  
2.0  
Ta=80℃  
25℃  
Ta=80℃  
25℃  
1.0  
0.0  
1.0  
0.0  
10  
0
2
4
6
8
0
2
4
6
10  
8
Input Voltage, VIN (V)  
IN (V)  
Input Voltage, V  
(4) OUTPUT VOLTAGE vs. INPUT VOLTAGE  
81N16  
IN-VOUT:100kΩ  
81N25  
30  
4
3
2
V
V
IN-VOUT:100kΩ  
Ta=25℃/ 80℃  
℃/ 80℃  
Ta=25  
2.5  
2.0  
1.5  
1.0  
1
0
0.5  
0.0  
4
0
1
0
2
3
2
3
1
Input Voltage, VIN (V)  
Input Voltage, VIN (V)  
81N28  
81N27  
4
3
2
4
3
2
V
IN-VOUT:100kΩ  
V
IN-VOUT:100kΩ  
/ 80℃  
Ta=25℃/ 80℃  
Ta=25℃  
1
0
1
0
4
4
0
2
3
0
1
2
3
1
Input Voltage, VIN (V)  
Input Voltage, VIN (V)  
UNISONIC TECHNOLOGIES CO., LTD  
11 of 15  
QW-R502-039,J  
www.unisonic.com.tw  
81CXXX/81NXXX  
CMOS IC  
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)  
81N29  
IN-VOUT:100kΩ  
81N30  
IN-VOUT:100kΩ  
5
4
3
2
4
3
2
V
V
/ 80℃  
/ 80℃  
Ta=25℃  
Ta=25℃  
1
0
1
0
4
0
2
3
2
3
1
0
1
4
5
IN  
Input Voltage, V (V)  
Input Voltage, VIN (V)  
81N33  
81N35  
5
5
V
IN-VOUT:100kΩ  
V
IN-VOUT:100kΩ  
/ 80℃  
/ 80℃  
Ta=25℃  
Ta=25℃  
4
3
2
4
3
2
1
0
1
0
2
3
0
1
4
5
0
1
2
3
4
5
Input Voltage, VIN (V)  
Input Voltage, VIN (V)  
(5) N-CHANNEL DRIVRE OUTPUT CURRENT vs. VDS  
81N16  
81N16  
1400  
15  
Ta=25℃  
Ta=25℃  
1200  
VIN=0.8V  
12  
1000  
800  
VIN=1.5V  
9
600  
400  
0.7V  
6
1.0V  
3
0
200  
0
2.0  
1.0  
0.0  
0.5  
1.0  
DS (V)  
1.5  
0
0.2  
0.4  
V
0.6  
DS (V)  
0.8  
V
UNISONIC TECHNOLOGIES CO., LTD  
12 of 15  
QW-R502-039,J  
www.unisonic.com.tw  
81CXXX/81NXXX  
CMOS IC  
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)  
81N25  
81N25  
30  
25  
20  
1200  
1000  
800  
Ta=25℃  
Ta=25℃  
VIN=0.8V  
V
IN=2.0V  
600  
0.7V  
15  
1.5V  
400  
200  
0
10  
5
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.0  
1.5  
2.0  
0.0  
0.5  
2.5  
VDS (V)  
VDS (V)  
81N27  
81N27  
30  
25  
1200  
1000  
800  
Ta=25℃  
Ta=25℃  
V
IN=0.8V  
20  
15  
V
IN=2.0V  
600  
0.7V  
400  
200  
0
10  
5
1.0V  
0
0.0  
0.0  
0.2  
0.4  
0.6  
DS (V)  
0.8  
1.0  
0.5  
1.0  
1.5  
DS (V)  
2.0  
2.5  
V
V
81N28  
81N28  
30  
25  
20  
300  
250  
200  
Ta=25℃  
Ta=25℃  
VIN=0.8V  
VIN=2.0V  
150  
100  
15  
0.7V  
10  
5
50  
0
1.0V  
0
0.4  
0.6  
0.8  
0.0  
0.2  
1.0  
1.0  
1.5  
2.0  
0.0  
0.5  
2.5  
VDS (V)  
VDS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
13 of 15  
QW-R502-039,J  
www.unisonic.com.tw  
81CXXX/81NXXX  
CMOS IC  
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)  
81N29  
81N29  
30  
25  
20  
300  
250  
200  
150  
Ta=25℃  
Ta=25℃  
V
IN=0.8V  
VIN=2.0V  
15  
0.7V  
100  
10  
5
1.0V  
50  
0
0
0.4  
0.6  
DS (V)  
0.8  
0.0  
0.2  
1.0  
1.0  
1.5  
DS (V)  
2.0  
0.0  
0.5  
2.5  
V
V
81N30  
81N30  
350  
300  
60  
50  
40  
Ta=25℃  
Ta=25℃  
V
IN=0.8V  
250  
200  
150  
100  
50  
30  
20  
10  
0
VIN=2.0V  
0.7V  
0.8  
1.0V  
0
0.5  
0.0  
0.2  
0.4  
0.6  
1.0  
0.0  
1.0 1.5 2.0 2.5 3.0 3.5  
DS (V)  
V
VDS (V)  
81N33  
81N33  
350  
300  
60  
50  
40  
Ta=25℃  
Ta=25℃  
250  
200  
150  
100  
50  
V
IN=0.8V  
0.7V  
V
IN=3.0V  
30  
20  
10  
0
2.0V  
1.0V  
0
0.5  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0.0  
1.0 1.5 2.0 2.5 3.0 3.5  
DS (V)  
V
VDS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
14 of 15  
QW-R502-039,J  
www.unisonic.com.tw  
81CXXX/81NXXX  
CMOS IC  
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)  
81N35  
81N35  
1400  
1200  
60  
50  
40  
Ta=25℃  
Ta=25℃  
V
IN=0.8V  
V
IN=3.0V  
2.5V  
1000  
800  
600  
400  
200  
0
0.7V  
30  
2.0V  
20  
10  
0
1.5V  
0.5  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0.0  
1.0 1.5 2.0 2.5 3.0 3.5  
DS (V)  
V
VDS (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
15 of 15  
QW-R502-039,J  
www.unisonic.com.tw  

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