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8550SC(TO-92) [UTC]

Transistor;
8550SC(TO-92)
型号： 8550SC(TO-92)
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Transistor
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中文：  中文翻译
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UTC8550S  
PNP EPITAXIAL SILICON TRANSISTOR  
LOW VOLTAGE HIGH CURRENT  
SMALL SIGNAL PNP  
TRANSISTOR  
FEATURES  
*Collector current up to 700mA  
*Collector-Emitter voltage up to 20 V  
*Complimentary to 8050S  
1
APPLICATIONS  
*Class B push-pull audio amplifier  
*General purpose applications  
TO-92  
1: EMITTER 2: COLLECTOR 3: BASE  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETERS  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Pc  
RATING  
UNITS  
V
V
V
W
mA  
°C  
°C  
-30  
-20  
-5  
1
-700  
Collector-emitter voltage  
Emitter-base voltage  
Collector dissipation(Ta=25°C)  
Collector current  
Ic  
Junction Temperature  
Storage Temperature  
Tj  
TSTG  
150  
-65 ~ +150  
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic=-100µA,IE=0  
MIN TYP MAX UNIT  
-30  
-20  
-5  
V
V
V
uA  
nA  
Ic=-1mA,IB=0  
IE=-100µA,Ic=0  
VCB=-30V,IE=0  
VEB=-5V,Ic=0  
-1  
Emitter cut-off current  
IEBO  
-100  
DC current gain(note)  
hFE1  
VCE=-1V,Ic=-1mA  
VCE=-1V,Ic=-150 mA  
VCE=-1V,Ic=-500mA  
Ic=-500mA,IB=-50mA  
Ic=500mA,IB=-50mA  
VCE=-1V,Ic=-10mA  
VCE=-10V,Ic=-50mA  
VCB=10V,IE=0  
100  
120  
40  
hFE2  
hFE3  
VCE(sat)  
VBE(sat)  
VBE  
110  
9.0  
400  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter saturation voltage  
Current gain bandwidth product  
Output capacitance  
-0.5  
-1.2  
-1.0  
V
V
V
MHz  
pF  
fT  
Cob  
100  
f=1MHz  
1
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R201-012,A  
UTC8550S  
PNP EPITAXIAL SILICON TRANSISTOR  
CLASSIFICATION OF hFE2  
RANK  
C
D
E
RANGE  
120-200  
160-300  
280-400  
TYPICAL CHARACTERISTIC CURVES  
Fig.1 Static characteristics  
Fig.2 DC current Gain  
Fig.3 Base-Emitter on Voltage  
0.5  
0.4  
3
2
10  
I
I
I
B
=3.0mA  
=2.5mA  
=2.0mA  
10  
V
CE=1V  
B
B
VCE=1V  
1
10  
2
10  
0.3  
0.2  
I
I
B
=1.5mA  
=1.0mA  
B
1
0
10  
10  
I
B
=0.5mA  
0.1  
0
0
-1  
10  
10  
0
0.4  
0.8  
1.2  
1.6  
2.0  
-1  
10  
0
1
2
3
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
10  
10  
10  
Collector-Emitter voltage ( V)  
Fig.4 Saturation voltage  
Ic,Collector current (mA)  
Base-Emitter voltage (V)  
Fig.5 Current gain-bandwidth  
product  
Fig.6 Collector output  
Capacitance  
4
3
10  
3
10  
10  
Ic=10*I  
B
V
CE=10V  
f=1MHz  
3
2
2
10  
V
BE(sat)  
I
E=0  
10  
10  
2
1
1
10  
10  
10  
VCE(sat)  
1
0
0
10  
10  
10  
3
0
1
2
3
10  
0
1
2
3
10  
-1  
10  
0
1
2
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
Ic,Collector current (mA)  
Ic,Collector current (mA)  
Collector-Base voltage (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
2
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R201-012,A  

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