8550SE(TO-92) [UTC]
Transistor;型号: | 8550SE(TO-92) |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总2页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UTC8550S
PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
1
APPLICATIONS
*Class B push-pull audio amplifier
*General purpose applications
TO-92
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
RATING
UNITS
V
V
V
W
mA
°C
°C
-30
-20
-5
1
-700
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector current
Ic
Junction Temperature
Storage Temperature
Tj
TSTG
150
-65 ~ +150
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=-100µA,IE=0
MIN TYP MAX UNIT
-30
-20
-5
V
V
V
uA
nA
Ic=-1mA,IB=0
IE=-100µA,Ic=0
VCB=-30V,IE=0
VEB=-5V,Ic=0
-1
Emitter cut-off current
IEBO
-100
DC current gain(note)
hFE1
VCE=-1V,Ic=-1mA
VCE=-1V,Ic=-150 mA
VCE=-1V,Ic=-500mA
Ic=-500mA,IB=-50mA
Ic=500mA,IB=-50mA
VCE=-1V,Ic=-10mA
VCE=-10V,Ic=-50mA
VCB=10V,IE=0
100
120
40
hFE2
hFE3
VCE(sat)
VBE(sat)
VBE
110
9.0
400
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
-0.5
-1.2
-1.0
V
V
V
MHz
pF
fT
Cob
100
f=1MHz
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-012,A
UTC8550S
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
0.5
0.4
3
2
10
I
I
I
B
=3.0mA
=2.5mA
=2.0mA
10
V
CE=1V
B
B
VCE=1V
1
10
2
10
0.3
0.2
I
I
B
=1.5mA
=1.0mA
B
1
0
10
10
I
B
=0.5mA
0.1
0
0
-1
10
10
0
0.4
0.8
1.2
1.6
2.0
-1
10
0
1
2
3
10
0
0.2
0.4
0.6
0.8
1.0
10
10
10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
4
3
10
3
10
10
Ic=10*I
B
V
CE=10V
f=1MHz
3
2
2
10
V
BE(sat)
I
E=0
10
10
2
1
1
10
10
10
VCE(sat)
1
0
0
10
10
10
3
0
1
2
3
10
0
1
2
3
10
-1
10
0
1
2
10
10
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-012,A
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