88C15G-AE5-R [UTC]
Power Supply Support Circuit;
| 型号： | 88C15G-AE5-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Supply Support Circuit |
| 文件： | 总12页 (文件大小：321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
88CXX
CMOS IC
BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE
DETECTOR
DESCRIPTION
The UTC 88CXX series are highly accurate, low power
consumption voltage detector, manufactured using CMOS process.
The detection voltage is fixed internally, with an accuracy of ±2.0%.
Besides, UTC 88CXX can easily delay a release signal by
attachment of an external capacitor with built-in delay circuit.
FEATURES
* Highly accurate
: 2.0%
* Hysteresis characteristics: 5% typ.
* Ultra-low current consumption: 1.0μA typ. (VDD=2.0V)
* Detection voltage ranges: 1.5~6V and step by 0.1V.
* Low operating voltage based on detection voltage
* Delay time setting by an additional external capacitor.
ORDERING INFORMATION
Ordering Number
Lead Free
Package
Packing
Halogen Free
88CXXG-AE5-R
88CXXG-AF5-R
88CXXL-AE5-R
SOT-23-5
SOT-25
Tape Reel
Tape Reel
88CXXL-AF5-R
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CMOS IC
MARKING INFORMATION
PACKAGE
VOLTAGE CODE
MARKING
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
36:3.6V
37:3.7V
38:3.8V
39:3.9V
40:4.0V
41:4.1V
42:4.2V
43:4.3V
44:4.4V
45:4.5V
15:1.5V
16:1.6V
17:1.7V
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
26:2.6V
27:2.7V
28:2.8V
29:2.9V
46:4.6V
47:4.7V
48:4.8V
49:4.9V
50:5.0V
51:5.1V
52:5.2V
53:5.3V
60:6.0V
SOT-25
SOT-23-5
PIN CONFIGURATION
PIN NO.
PIN NAME
VOUT
VDD
1
2
3
4
5
VSS
NC
CD
BLOCK DIAGRAMS
VIN
VREF
Delay
circuit
+
-
VOUT
VSS
CD
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CMOS IC
ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified.)
PARAMETER
SYMBOL
VDD-VSS
VCD
RATINGS
12
UNIT
V
Power Supply Voltage
CD Terminal Input Voltage
Output Voltage
VSS-0.3 ~ VDD +0.3
VSS-0.3 ~ VDD+0.3
50
V
VOUT
V
Output Current
IOUT
mA
mW
°С
°С
Power Dissipation
PD
250
Operating Temperature
Storage Temperature
TOPR
-40 ~ +85
-40 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified.)
Detection voltage (1.5V ~ 2.6V)
PARAMETER
SYMBOL
VDET
TEST CONDITONS
MIN
-VDET
×0.98
-VDET
×0.02
TYP
MAX
-VDET
×1.02
-VDET
×0.08
5.0
UNIT
V
Detect Voltage
-VDET
-VDET
×0.05
1.2
Hysteresis Range
VHYS
V
Supply Current
ISS
VDD=3.5V
µA
V
Operating Voltage
VDD
0.95
0.23
0.36
10.0
N-CH VDS=0.5V
P-CH VDS=0.5V
VDD=1.20V
VDD=4.8V
0.50
0.62
mA
mA
Output Current
IOUT
Detect Voltage Temperature
Characteristics
△VDET
△TOPR×VDET
tDLY
±100
30
ppm/°С
Delay Time
VDD=3.5V, CD=4.7nF
16
37
ms
Detection voltage (2.7V ~ 3.9V)
PARAMETER
SYMBOL
VDET
TEST CONDITONS
MIN
-VDET
×0.98
-VDET
×0.02
TYP
MAX
-VDET
×1.02
-VDET
×0.08
5.0
UNIT
V
Detect Voltage
-VDET
-VDET
×0.05
1.3
Hysteresis Range
VHYS
V
Supply Current
ISS
VDD=4.5V
µA
V
Operating Voltage
VDD
0.95
0.23
1.60
0.36
10.0
V
DD=1.20V
0.50
3.70
0.62
mA
mA
mA
N-CH VDS=0.5V
P-CH VDS=0.5V
Output Current
IOUT
VDD=2.40V
VDD=8.4V
Detect Voltage Temperature
Characteristics
△VDET
△TOPR×VDET
tDLY
±100
28
ppm/°С
Delay Time
VDD=4.5V, CD=4.7nF
16
34
ms
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CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (4.0V ~ 5.4V)
PARAMETER
SYMBOL
VDET
TEST CONDITONS
MIN
-VDET
×0.98
-VDET
×0.02
TYP
MAX
UNIT
V
-VDET
×1.02
-VDET
×0.08
5.0
Detect Voltage
-VDET
-VDET
×0.05
1.5
Hysteresis Range
VHYS
V
Supply Current
ISS
VDD=6.0V
µA
V
Operating Voltage
VDD
0.95
0.23
1.60
0.46
10.0
V
DD=1.20V
0.50
3.70
0.75
mA
mA
mA
N-CH VDS=0.5V
P-CH VDS=0.5V
Output Current
IOUT
VDD=2.40V
VDD=6.0V
△VDET
△TOPR×VDET
Detect Voltage Temperature
Characteristics
±100
17
ppm/°С
Delay Time
tDLY
VDD=7.0V, CD=4.7nF
12
22
ms
Detection voltage (5.5V ~ 6.0V)
PARAMETER
SYMBOL
VDET
TEST CONDITONS
MIN
-VDET
×0.98
-VDET
×0.02
TYP
MAX
-VDET
×1.02
-VDET
×0.08
5.0
UNIT
V
Detect Voltage
-VDET
-VDET
×0.05
1.5
Hysteresis Range
VHYS
V
Supply Current
ISS
VDD=7.5V
µA
V
Operating Voltage
VDD
12
VDD=1.20V
VDD=2.40V
VDD=4.8V
0.23
1.60
2.08
0.50
3.70
3.42
mA
mA
mA
N-CH VDS=0.5V
P-CH VDS=0.5V
Output Current
IOUT
Detect Voltage Temperature
Characteristics
△VDET
△TOPR×VDET
±100
17
ppm/°С
Delay Time
tDLY
VDD=7.5V, CD=4.7nF
12
22
ms
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CMOS IC
DECTECTION VOLTAGE RANGE vs. HYSTERESIS WIDTH
DETECTION VOLTAGE
RANGE (V)
1.5V±2.0%
1.6V±2.0%
1.7V±2.0%
1.8V±2.0%
1.9V±2.0%
2.0V±2.0%
2.1V±2.0%
2.2V±2.0%
2.3V±2.0%
2.4V±2.0%
2.5V±2.0%
2.6V±2.0%
2.7V±2.0%
2.8V±2.0%
2.9V±2.0%
3.0V±2.0%
3.1V±2.0%
3.2V±2.0%
3.3V±2.0%
3.4V±2.0%
3.5V±2.0%
HYSTERESIS WIDTH
DETECTION VOLTAGE
RANGE (V)
3.6V±2.0%
3.7V±2.0%
3.8V±2.0%
3.9V±2.0%
4.0V±2.0%
4.1V±2.0%
4.2V±2.0%
4.3V±2.0%
4.4V±2.0%
4.5V±2.0%
4.6V±2.0%
4.7V±2.0%
4.8V±2.0%
4.9V±2.0%
5.0V±2.0%
5.1V±2.0%
5.2V±2.0%
5.3V±2.0%
6.0V±2.0%
HYSTERESIS WIDTH
V
HYS TYP (V)
0.075
0.080
0.085
0.090
0.095
0.100
0.105
0.110
0.115
0.120
0.125
0.130
0.135
0.140
0.145
0.150
0.155
0.160
0.165
0.170
0.175
VHYS TYP (V)
0.180
0.185
0.190
0.195
0.200
0.205
0.210
0.215
0.220
0.225
0.230
0.235
0.240
0.245
0.250
0.255
0.260
0.265
0.300
OUTPUT CONFIGURATIONS
Implementation
CMOS
No
With different power supplies
With active low reset CPUs
Yes
No
With active high reset CPUs
With voltage divider variable resistors
No
Example with one power supply
VDD
V/D
CMOS
CPU
OUT
CD
VSS
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CMOS IC
TYPICAL CHARACTERISTICS
88C25
Hystersis Voltage Width vs. Temperature
Detection Voltage vs. Temperature
+VDET
2.80
8
2.70
2.60
7
6
5
-VDET
2.50
2.40
2.30
2.20
4
3
20
Temperature,TA(°С)
80
0
-40
-20
40
60
20
Temperature, TA(°С)
80
0
-40
-20
40
60
Current Consumption vs. Input Voltage
Pch Transistor Output Current vs VDS
20
3.5
3.0
VDD=8.4V
TA=25°С
TA=25°С
15
10
VDD=7.2V
2.5
2.0
1.5
1.0
VDD=6.0V
VDD=4.8V
VDD=3.6V
5
0
0.5
0.0
0
2
10
0
2
4
6
8
10
12
4
6
8
Input Voltage, VDD (V)
VDS (V)
Nch Transistor Output Current - VDS
TA=25°С
Dynamic Response vs. COUT (CD pin; open)
1000
100
12
TA=25°С
10
8
tPHL
VDD=2.4V
10
1
6
4
2
0
tPLH
VDD=1.2V
1.0
0.1
0.1
1
10
100
0
0.5
1.5
2
2.5
VDS (V)
Load Capacitance (nF)
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
88C28
Hystersis Voltage Width vs. Temperature
Detection Voltage vs. Temperature
+VDET
8
3.00
2.90
2.80
2.70
2.60
7
-VDET
6
5
4
3
2.50
2.40
20
Temperature,TA(°С)
80
0
-40
-20
40
60
20
Temperature,TA(°С)
80
0
-40
-20
40
60
Current Consumption vs. Input Voltage
P-CH Transistor Output Current vs. VDS
3.66
20
15
10
TA=25°С
TA=25°С
VDD=8.4V
3.0
2.5
VDD=7.2V
VDD=6.0V
2.0
1.5
1.0
VDD=4.8V
VDD=3.6V
5
0
0.5
0.0
0
2
4
6
8
10
0
2
4
8
10
12
6
Input Voltage, VDD (V)
VDS (V)
Dynamic Response vs. COUT (CD pin; open)
1000
N-CH Transistor Output Current - VDS
12
10
8
TA=25°С
TA=25°С
tPHL
100
10
VDD=2.4V
6
4
tPLH
1
2
VDD=1.2V
0.1
0
1
0.1
10
100
0.5
0
1.0
1.5
2.0
2.5
Load Capacitance (nF)
VDS (V)
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
Current Consumpation vs. Tempreature
VDD=4.5V
N-CH Transisor Output Current vs. Input Voltage
6.0
2.0
1.5
1.0
0.5
0.0
VDS=0.5V
5.5
5.0
4.5
TA=-40°С
TA=25°С
4.0
3.5
3.0
2.5
2.0
TA=85°С
1.5
1.0
0.5
0.0
20
Temperature,TA(°С)
80
0
0.5
1
1.5
2
3
0
2.5
3.5
-40
-20
40
60
Input Voltage,VDD(V)
P-CH Transistor Output Current vs. Input Voltage
4.5
Delay Time vs. Temperature
CD=4.7nF
50
VDS=0.5V
4.0
3.5
TA=-40°С
40
30
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TA=25°С
20
TA=85°С
10
0
12
0
2
4
6
8
10
20
Temperature,TA(°С)
80
0
-40
-20
40
60
Input Voltage,VDD(V)
Delay Time vs. CD Pin Capacitance
TA=25°С
10000
1000
100
10
1
0.1
10
100
1000
0.01
0.1
1
CD Pin Capacitance,CD(nF)
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
88C33
Detection Voltage vs. Temperatyre
Hystersis Voltage Width vs. Temperature
3.60
8
3.55
3.50
7
+VDET
6
3.45
5
3.40
3.35
3.30
4
3
-VDET
20
Temperature,TA(°С)
80
0
-40
-20
40
60
20
Temperature,TA(°С)
80
0
-40
-20
40
60
Current Consumption vs. Input Voltage
P-CH Transistor Output Current vs VDS
20
4.5
4.0
3.5
3.0
TA=25°С
TA=25°С
VDD=8.4V
15
10
VDD=7.2V
2.5
2.0
1.5
1.0
VDD=6.0V
VDD=4.8V
5
0.5
0.0
0
0
2
10
4
6
8
0
2
4
8
10
12
6
Input Voltage, VDD (V)
VDS (V)
Dynamic Response vs. COUT (CD pin; open)
N-CH transistor output current - VDS
TA=25°С
1000
12
10
8
TA=25°С
tPHL
100
10
VDD=2.4V
6
4
1
tPLH
2
0
VDD=1.2V
1.0
0.1
0
0.5
2.5
1.5
2.0
0.1
1
100
10
Load Capacitance (nF)
VDS (V)
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
N-CH Transisor Output Current vs. Input Voltage
Current Consumpation vs. Tempreature
VDD=4.5V
2.5
6.0
VDS=0.5V
5.5
5.0
4.5
2.0
1.5
TA=-40°С
4.0
3.5
3.0
2.5
2.0
TA=25°С
TA=85°С
1.0
1.5
1.0
0.5
0.0
0.5
0.0
0
0.5
2.5
Input Voltage,VDD(V)
3
3.5
1
1.5
2
20
Temperature,TA(°С)
80
0
-40
-20
40
60
Delay Time vs. Temperature
CD=4.7nF
P-CH Transistor Output Current vs. Input Voltage
4.5
60
50
VDS=0.5V
4.0
3.5
TA=-40°С
40
30
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TA=25°С
20
TA=85°С
10
0
20
Temperature,TA(°С)
80
0
-40
-20
40
60
12
0
2
4
6
8
10
Input Voltage,VDD(V)
Delay Time vs. CD Pin Capacitance
TA=25°С
10000
1000
100
10
1
0.1
10
100
1000
0.01
0.1
1
CD Pin Capacitance,CD(nF)
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CMOS IC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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