88C60L-AF5-R [UTC]
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR; 内置延迟电路高精度电压检测器
| 型号： | 88C60L-AF5-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
| 文件： | 总16页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
88CXX
CMOS IC
BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE
DETECTOR
1
2
3
ꢀ
DESCRIPTION
5
The UTC 88CXX series is a high-precision voltage detector
4
developed and foundry using CMOS process. The detection
voltage is fixed internally, with an accuracy of ±2.0%. The CMOS
output is available. Besides, 88CXX can easily delay a release
signal by attachment of an external capacitor with built-in delay
circuit.
SOT-25
ꢀ
FEATURES
*Pb-free plating product number: 88CXXL
* High-precision detection voltage: ±2.0%
* Hysteresis characteristics: 5% typ
ꢀ PIN CONFIGURATION
* Ultra-low current consumption satisfied various detection voltage,
1.0μA typ. (VDD=2.0V) for ≤1.4V and 1.2μA typ. (VDD=3.5V) for
PIN NO.
PIN NAME
OUT
VDD
1
2
3
4
5
≥1.5V.
* Available detection voltage from 1.1~6.0V and step by 0.1V.
* Low operating voltage based on detection voltage, 0.8~6.0V for
for ≤1.4V and 0.95~10V for ≥1.5V.
VSS
NC
CD
* Delay time setting by an additional external capacitor.
ꢀ
ORDERING INFORMATION
Order Number
Package
SOT-25
Packing
Tape Reel
Lead Free
88CxxL-AF5-R
Normal
88Cxx-AF5-R
xx: Output Voltage, refer to Marking Information.
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1
Copyright © 2005 Unisonic Technologies Co.,
QW-R502-040,A
88CXX
CMOS IC
ꢀ
MARKING INFORMATION
PACKAGE
VOLTAGE CODE
11:1.1V
MARKING
36:3.6V
37:3.7V
38:3.8V
39:3.9V
40:4.0V
41:4.1V
42:4.2V
43:4.3V
44:4.4V
45:4.5V
46:4.6V
47:4.7V
48:4.8V
49:4.9V
50:5.0V
51:5.1V
52:5.2V
53:5.3V
54:5.4V
55:5.5V
56:5.6V
57:5.7V
58:5.8V
59:5.9V
60:6.0V
12:1.2V
13:1.3V
14:1.4V
15:1.5V
16:1.6V
17:1.7V
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
26:2.6V
27:2.7V
28:2.8V
29:2.9V
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
5
1
4
Space:Pb/Sn
L:Pb-free
CXXX
2
SOT-25
Voltage Code
3
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QW-R502-040,A
88CXX
CMOS IC
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
VDD-Vss
RATINGS
UNIT
V
≤1.4V
≥1.5V
8
12
Power Supply Voltage
CD terminal Input Voltage
Output Voltage
VCD
VOUT
IOUT
PD
VSS-0.3 ~ VDD +0.3
VSS-0.3 ~ VDD+0.3
50
V
V
Output Current
mA
mW
℃
Power Dissipation
Operating Temperature
Storage Temperature
150
TOPR
TSTG
-40 ~ +85
-40 ~ +150
℃
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.)
TEST
CIRCUIT
PARAMETER
SYMBOL
-VDET
VHYS
TEST CONDITIONS
MIN
TYP MAX UNIT
-VDET
-VDET
×0.98
Detection Voltage
Hysteresis Width
Operating Voltage
1
-VDET
V
V
V
×1.02
-VDET -VDET -VDET
×0.03 ×0.05 ×0.08
1
1
≤1.4V
0.8
6.0
10.0
2.5
3.0
3.3
3.8
4.2
VDD
≥1.5V
0.95
1.1V ~ 1.4V
1.5V ~ 2.6V
2.7V ~ 3.9V
4.0V ~ 5.4V
5.5V ~ 6.0V
1.1V ~ 1.4V
1.5V ~ 2.6V
VDD=2.0V
VDD=3.5V
VDD=4.5V
VDD=6.0V
VDD=7.5V
1.0
1.2
Current
ISS
IOUT
td
2
µA
mA
ms
1.3
Consumption
1.5
1.6
VDD=0.95V 0.03
VDD=1.20V 0.23
0.25
0.50
0.50
3.70
0.50
3.70
0.50
3.70
0.62
0.62
0.62
0.75
0.96
6.6
VDD=1.20V 0.23
VDD=2.40V 1.60
VDD=1.20V 0.23
VDD=2.40V 1.60
2.7V ~ 3.9V
4.0V ~ 5.4V
5.5V ~ 6.0V
Nch
DS=0.5V
3
4
V
Output Current
VDD=1.20V 0.23
DD=2.40V 1.60
V
1.1V ~ 1.4V
1.5V ~ 2.6V
2.7V ~ 3.9V
4.0V ~ 5.4V
5.5V ~ 6.0V
1.1V ~ 1.4V
1.5V ~ 2.6V
2.7V ~ 3.9V
4.0V ~ 5.4V
5.5V ~ 6.0V
VDD=4.8V 0.36
VDD=4.8V 0.36
VDD=4.8V 0.36
VDD=6.0V 0.46
VDD=8.4V 0.59
Pch(CMOS
output)
DS=0.5V
V
VDD=4.5V, CD=4.7nF
VDD=4.5V, CD=4.7nF
VDD=4.5V, CD=4.7nF
VDD=7.0V, CD=4.7nF
VDD=7.0V, CD=4.7nF
4.95
4.95
4.95
3
8.25
8.25
8.25
5
6.6
Delay Time
5
6.6
4
3
4
5
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88CXX
CMOS IC
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)
TEST
CIRCUIT
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
-VDET =1.1V
-VDET =1.2V
-VDET =1.3V
-VDET =1.4V
-VDET =1.5V
-VDET =1.6V
-VDET =1.7V
-VDET =1.8V
-VDET =1.9V
-VDET =2.0V
-VDET =2.1V
-VDET =2.2V
-VDET =2.3V
-VDET =2.4V
-VDET =2.5V
-VDET =2.6V
-VDET =2.7V
-VDET =2.8V
-VDET =2.9V
-VDET =3.0V
-VDET =3.1V
-VDET =3.2V
-VDET=3.3V
-VDET =3.4V
-VDET =3.5V
-VDET =3.6V
-VDET =3.7V
-VDET =3.8V
-VDET =3.9V
-VDET=4.0V
-VDET=4.1V
-VDET=4.2V
-VDET=4.3V
-VDET=4.4V
-VDET=4.5V
-VDET=4.6V
-VDET=4.7V
-VDET=4.8V
-VDET=4.9V
-VDET=5.0V
-VDET=5.1V
-VDET=5.2V
-VDET=5.3V
-VDET=5.4V
-VDET=5.5V
-VDET=5.6V
-VDET=5.7V
-VDET=5.8V
-VDET=5.9V
-VDET=6.0V
±0.19 ±0.57
±0.20 ±0.60
±0.22 ±0.66
±0.24 ±0.72
±0.18 ±0.54
±0.19 ±0.57
±0.20 ±0.60
±0.21 ±0.63
±0.22 ±0.66
±0.24 ±0.72
±0.25 ±0.75
±0.26 ±0.78
±0.27 ±0.81
±0.28 ±0.84
±0.29 ±0.87
±0.31 ±0.93
±0.32 ±0.96
±0.33 ±0.99
±0.34 ±1.02
±0.35 ±1.05
±0.36 ±1.08
±0.38 ±1.14
±0.39 ±1.17
±0.40 ±1.20
Temperature Characteristic of
-VDET
∆-VDET
∆Ta
±0.41 ±1.23
mV/℃
1
±0.42 ±1.26
±0.44 ±1.32
±0.45 ±1.35
±0.46 ±1.38
±0.47 ±1.41
±0.48 ±1.44
±0.49 ±1.47
±0.51 ±1.53
±0.52 ±1.56
±0.53 ±1.59
±0.54 ±1.62
±0.55 ±1.65
±0.56 ±1.68
±0.58 ±1.74
±0.59 ±1.77
±0.60 ±1.80
±0.61 ±1.83
±0.62 ±1.86
±0.64 ±1.92
±0.65 ±1.95
±0.66 ±1.98
±0.67 ±2.01
±0.68 ±2.04
±0.69 ±2.07
±0.71 ±2.13
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QW-R502-040,A
88CXX
CMOS IC
ꢀ
DECTECTION VOLTAGE RANGE vs HYSTERESIS WIDTH
DETECTION VOLTAGE
RANGE (V)
1.1V±2.0%
1.2V±2.0%
1.3V±2.0%
1.4V±2.0%
1.5V±2.0%
1.6V±2.0%
1.7V±2.0%
1.8V±2.0%
1.9V±2.0%
2.0V±2.0%
2.1V±2.0%
2.2V±2.0%
2.3V±2.0%
2.4V±2.0%
2.5V±2.0%
2.6V±2.0%
2.7V±2.0%
2.8V±2.0%
2.9V±2.0%
3.0V±2.0%
3.1V±2.0%
3.2V±2.0%
3.3V±2.0%
3.4V±2.0%
3.5V±2.0%
HYSTERESIS WIDTH
DETECTION VOLTAGE
RANGE (V)
3.6V±2.0%
3.7V±2.0%
3.8V±2.0%
3.9V±2.0%
4.0V±2.0%
4.1V±2.0%
4.2V±2.0%
4.3V±2.0%
4.4V±2.0%
4.5V±2.0%
4.6V±2.0%
4.7V±2.0%
4.8V±2.0%
4.9V±2.0%
5.0V±2.0%
5.1V±2.0%
5.2V±2.0%
5.3V±2.0%
5.4V±2.0%
5.5V±2.0%
5.6V±2.0%
5.7V±2.0%
5.8V±2.0%
5.9V±2.0%
6.0V±2.0%
HYSTERESIS WIDTH
VHYS TYP (V)
0.180
V
HYS TYP (V)
0.055
0.060
0.065
0.070
0.075
0.080
0.085
0.090
0.095
0.100
0.105
0.110
0.115
0.120
0.125
0.130
0.135
0.140
0.145
0.150
0.155
0.160
0.165
0.170
0.175
0.185
0.190
0.195
0.200
0.205
0.210
0.215
0.220
0.225
0.230
0.235
0.240
0.245
0.250
0.255
0.260
0.265
0.270
0.275
0.280
0.285
0.290
0.295
0.300
ꢀ
OUTPUT CONFIGURATIONS
Implementation
With different power supplies
With active low reset CPUs
CMOS
No
Yes
No
With active high reset CPUs
With voltage divider variable resistors
No
Example with one power supply
VDD
V/D
CMOS
CPU
OUT
CD
Vss
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QW-R502-040,A
88CXX
CMOS IC
ꢀ
TEST CIRCUITS
ISS
(1)
(2)
VDD
VDD
88CXX OUT
Series
OUT
CD
88CXX
Series
VDD
VDD
Vss CD
Vss
(3)
(4)
VDD
VDD
IOUT
IOUT
OUT
88CXX
Series
88CXX
Series
VDD
VDD
OUT
Vss CD
Vss CD
VDD+VDS
VDS
(5)
1µ
VIH
VDD
Input Voltage
VIL
OUT
CD
88CXX
Series
Oscilloscope
P.G.
td
Vss
Output Voltage
Vss
VDD ×90%
(a):VIH=6V, VIL=0.80V
(b):VIH=10V, VIL=0.95V
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QW-R502-040,A
88CXX
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ꢀ
TECHNICAL TERMS
1. Detection voltage (-VDET
)
The detection voltage -VDET is the voltage at which the output switches to low. This detection voltage varies
slightly among products of the same type. The variation of voltages between the specified minimum [(-VDET)min.]
and maximum [(-VDET)max.] values is called the detection voltage range (See Figure 1).
Example: For the -VDET=1.5V, detection voltage lies in the range of 1.470≦(-VDET)≦1.530. This means that -VDET
is 1.470 in a product while -VDET is 1.530 in another of the same -VDET=1.5V.
2. Release voltage (+VDET
)
The release voltage +VDET is the voltage at which the output returns (is “released”) to high. This release voltage
varies slightly among products of the same type. The variation of voltages between the specified minimum
[(+VDET)min.] and maximum [(+VDET)max.] values is called the release voltage range (See Figure 2).
Example: For the -VDET=1.5V, the release voltage lies in the range of 1.514≦(+VDET)≦1.652. This means that
+VDET is 1.514 in a product while +VDET is 1.652 in another of the same -VDET=1.5V.
Remark: Although the detection voltage and release voltage overlap in the range of 1.514 V ~ 1.530 V, +VDET
will always be larger than -VDET
.
V
D
V
DD
Release voltage
(+VDET) Max.
Detection voltage
(-VDET)Max.
(-VDET)Min.
Voltage range Detection
Release voltage range
(+VDET) Min.
OUT
OUT
Figure 1
3. Hysteresis width (VHYS
Figure 2 (CD=0F)
)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (B-A=VHYS in
Figure 7). By giving a device hysteresis, trouble such as noise at the input is avoided.
4. Delay time (td)
The delay time is a time that the input voltage to VDD terminal exceeds the release voltage (+VDET) and then the
output of the OUT terminal inverts. The delay time can be changed by the additional external capacitor CD.
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QW-R502-040,A
88CXX
CMOS IC
V
VDD
+VDET
OUT
td
Figure 3
5. Through-type current
Through-type current refers to the current which flows instantaneously, at the time of detection and release of a
voltage detector. Through-type current is large in CMOS output devices.
6. Oscillation
In applications where a resistor is connected to the voltage detector input , in the CMOS active low products for
example, the through-type current generated when the output goes from low to high (release) causes a voltage
drop equal to [through-type current]×[input resistance] across the resistor. When the resultant input voltage drops
below the detection voltage -VDET, the output voltage returns to its low level. In this state, the through-type current
and its resultant voltage drop have disappeared, and the output goes back from low to high. A through-type current
is again generated, a voltage drop appears, and the process repeats. This unstable condition is referred to as
oscillation.
ꢀ
STANDARD CIRCUIT
Connect directly the CD capacitor for delay between CD and Vss terminals
VDD
CD
OUT
Vss
Figure 5
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QW-R502-040,A
88CXX
CMOS IC
ꢀ
OPERATION
1. Basic operation: CMOS active low output
(1) When power supply voltage VDD is greater than the release voltage +VDET, the Nch transistor is OFF and the
Pch transistor ON, causing VDD (high) to appear at the output.
(2) When power supply voltage VDD goes below +VDET, the output maintains the power supply voltage level, as
long as VDD remains above the detection voltage -VDET. When VDD does fall below -VDET (A in Figure 7), the Nch
transistor goes ON the Pch transistor goes OFF, and VSS appears at the output.
(3) When VDD falls below the minimum operating voltage, the output becomes undefined. However, output will
revert to VDD if a pull-up has been employed.
(4) VSS will again be output when VDD rises above the minimum operating voltage. VSS will continue to be output
even when VDD surpasses -VDET, as long as it does not exceed the release voltage +VDET
.
(5) When VDD rises above +VDET (B in Figure 7), the Nch transistor goes OFF the Pch transistor goes ON, and VDD
appears at the output. Then VDD at the OUT terminal appears with delay time (td) due to delay circuit.
VDD
(1)
(2)
A
(3)
(4)
(5)
VDD
B
Hysteresis
width(VHYS)
Release voltage (+VDET)
Detection voltage (-VDET)
RA
*
*
Pch
Nch
+
-
Delay
circuit
Min.operating voltage
Vss
OUT
CD
RB
RC
VREF
Vss
N
VDD
*Parasitic diode
CD
CD
OUT terminal output
Vss
td
Figure 6
Figure 7
2. Delay circuit
The delay circuit outputs the signal delayed from the release voltage (+VDET) point of the power voltage VDD
rising. The output signal is not delayed when the VDD goes down the detection voltage (-VDET) or less. (See Figure 7).
The delay time (td) is determined by the time constant of the built-in constant current (approx. 100nA in the case
of products with detection voltage of 1.5V or more, approx. 570nA in the case of products with detection voltage of
1.4V or less) and the attached external capacitor (CD), and calculated from the following formula.
td (ms) = Delay factor×CD (nF)
Delay factor: (25℃)
Products with detection voltage of 1.4V or less: Min.0.57, Typ.0.77, Max.0.96
Products with detection voltage of 1.5V or more: Min.3.8, Typ. 5.1, Max.6.4
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QW-R502-040,A
88CXX
CMOS IC
Cautions
*The open of CD terminal may cause double pulses shown in Figure 8 at release. If the double pulses cause a
trouble, attach 10pF or larger capacitor to the CD terminal. Do not apply the voltage to the CD terminal.
Time
Figure 8
*Layout the print circuit board not to apply or flow out the current to/from the CD terminal. Doing not so may cause
inaccurate delay time.
*Use an external capacitor, CD of which leakage current can be ignored for the built-in constant-current value. A
leakage current may cause an error of delay time. Also, a leakage current over the built-in constant-current
causes unrelease status.
3. Other characteristics
(1) Temperature characteristic of detection voltage.
The temperature characteristics of the detection voltage are expressed by the oblique line parts in Figure 9.
-VDET (V)
+0.54mV/℃
1.500
-0.54mV/℃
-40
25
85
Ta(℃)
Figure 9
(2) Temperature characteristics of release voltage
Δ+VDEF
The temperature factor (
detection voltage as follows:
) of the release voltage is calculated by the temperature factor of the
ΔTa
∆ + V DET
∆ Ta
+ VDET
- VDET
∆ - V DET
∆ Ta
=
×
The temperature factor of the release voltage has a same sign characteristics as the temperature factor of the
detection voltage.
(3) Temperature characteristics of hysteresis voltage
The temperature characteristics of hysteresis voltage (
Δ+VDEF
ΔTa
Δ-VDEF
ΔTa
-
) is calculated as follows:
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QW-R502-040,A
88CXX
CMOS IC
VHYS
-VDET
∆ + V DET
∆ Ta
∆ - V DET
∆ Ta
∆ - V DET
∆ Ta
-
=
×
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TYPICAL PERFORMANCE CHARACTERISTICS
(1) Current consumption – Input voltage
-VDET=1.1V
-VDET=1.4V
Ta=25℃
Ta=25℃
15µA
18µA
2.5
2.5
2.0
1.5
2.0
1.5
1.0
0.5
0.0
1.0
0.5
0.0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
8
8
Input voltage, VDD (V)
Input voltage, VDD (V)
-VDET=1.5V
-VDET=6.0V
Ta=25℃
Ta=25℃
12.9µA
3.4µA
2.5
2.0
1.5
1.0
2.5
2.0
1.5
1.0
0.5
0.5
0.0
0.0
2
0
2
4
8
10
12
4
10
6
0
6
8
12
Input voltage, VDD (V)
Input voltage, VDD (V)
(2) Pch transistor output current - VDS
-VDET=1.5V
30
Ta=25℃
25
20
15
VDD=8.4V
VDD=7.2V
VDD=6.0V
10
VDD=4.8V
VDD=3.6V
5
0
VDD=2.4V
4
0
2
10
6
8
VDS (V)
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TYPICAL PERFORMANCE CHARACTERICS (Cont.)
(3) Nch transistor output current (IOUT) – VDS
-VDET=6.0V
60
Ta=25℃
50
VDD=6.0V
40
30
20
10
0
VDD=4.8V
VDD=3.6V
VDD=2.4V
VDD=1.2V
2
0
1
3
4
5
VDS (V)
(4) Nch transistor output current – Input voltage
-VDET=1.4V
3.5
-VDET=6.0V
20
15
VDS=0.5V
VDS=0.5V
3
2.5
2
Ta=-40℃
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=25℃
Ta=85℃
10
5
1.5
1
0.5
0
0
0.5
1
1.5
0
2
8
0
2
4
Input voltag
6
Input voltag
VDD (V)
VDD (V)
(5) Pch transistor output current– Input voltage
-VDET=6.0V
-VDET=1.1V
3
5.0
4.0
3.0
2.0
1.0
0.0
VDS=0.5V
VDS=0.5V
Ta=-40℃
2.5
2
Ta=25℃
Ta=-40℃
Ta=25℃
1.5
1
Ta=85℃
Ta=85℃
0.5
0
0
4
6
8
10
12
0
1.0
1.5
2
2.5
3
2
Input voltage, VDD (V)
Input voltage, VDD (V)
UNISONIC TECHNOLOGIES CO., LTD
13
www.unisonic.com.tw
QW-R502-040,A
88CXX
CMOS IC
ꢀ
TYPICAL PERFORMANCE CHARACTERICS (Cont.)
(6) Dynamic response (CD : Open)
-VDET = 1.4V
-VDET = 1.1V
1
1
Ta=25℃
Ta=25℃
tPHL
tPHL
0.1
0.1
tPLH
tPLH
0.01
0.01
0.001
0.0001
0.001
0.0001
0.001
0.01
0.1
0.001
0.01
0.1
Load capacitance (μF)
Load capacitance (μF)
-VDET = 1.1V
tPHL
-VDET = 1.5V
1
1
Ta=25℃
Ta=25℃
tPHL
0.1
0.1
tPLH
tPLH
0.01
0.01
0.001
0.0001
0.001
0.0001
0.001
0.01
0.001
0.01
0.1
0.1
Load capacitance (μF)
Load capacitance (μF)
Response Time Measure Circuit
VDD
OUT
UTC
88CXX
VDD
V
Vs
V
UNISONIC TECHNOLOGIES CO., LTD
14
www.unisonic.com.tw
QW-R502-040,A
88CXX
CMOS IC
UNISONIC TECHNOLOGIES CO., LTD
15
www.unisonic.com.tw
QW-R502-040,A
88CXX
CMOS IC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
16
www.unisonic.com.tw
QW-R502-040,A
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