8N70L-TF3-T [UTC]
8A, 700V N-CHANNEL POWER MOSFET; 8A ， 700V N沟道功率MOSFET
| 型号： | 8N70L-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 8A, 700V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
8N70
Power MOSFET
8A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N70 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with minimum
on-state resistance, superior switching performance and withstand
high energy pulse in the avalanche and commutation mode.
FEATURES
* RDS(ON)= 1.4Ω @ VGS=10V, ID=4A
* High switching speed
* Low Gate Charge(typical 32nC)
* Low CRSS (typical 13.7pF)
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
8N70L-TA3-T
8N70L-TF3-T
Halogen Free
1
2
D
D
3
S
S
8N70G-TA3-T
8N70G-TF3-T
TO-220
G
G
Tube
Tube
TO-220F
Note: Pin Assignment: G: Gate D: Drain
S: Source
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8N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
700
±30
8
VGSS
V
TC=25°C
A
Continuous
ID
Drain Current
TC=100°C
4.8
A
Pulsed (Note 4)
Repetitive (Note 2)
Repetitive (Note 3)
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220
IDM
IAR
32
A
8
A
Avalanche Current
Avalanche Energy
IAS
8
A
EAS
EAR
266
11.6
147
40
mJ
mJ
Power Dissipation (TC=25°C)
PD
W
TO-220F
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 7.74mH, IAS = 8A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. Limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220
0.85
Junction to Case
θJC
°C/W
TO-220F
3.1
Note: 3urface mounted on FR4 board t≤10sec
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=700V, VGS=0V
GS=+30V, VDS=0V
700
V
1
µA
Forward
Reverse
V
+10 nA
-10 nA
Gate-Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
1.2 1.4
ꢀ
CISS
COSS
CRSS
2006
148
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
13.7
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8N70
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
QG
QGS
QGD
tD(ON)
tR
32
9
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=560V, ID=8A
(Note 1, 2)
8
23
69
144
77
VDD=300V, ID=10A, RG=25ꢀ,
VGS=10V (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
8
A
A
Integral reverse diode in the
MOSFET
32
1.4
IS=8A, VGS=0V
V
420
4.2
ns
µC
IS=8A, VGS=0V, dIF/dt=100A/µs
QRR
Notes: 1. Essentially independent of operating temperature
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
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8N70
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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8N70
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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8N70
Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
5
4
10
8
ID=4A, VGS=10V
3
2
6
4
2
0
1
0
1.5
3
4.5
7.5
0
6
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (V)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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