9N100G-T47-T [UTC]
9A, 1000V N-CHANNEL POWER MOSFET; 9A ， 1000V N沟道功率MOSFET
| 型号： | 9N100G-T47-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 9A, 1000V N-CHANNEL POWER MOSFET |
| 文件： | 总5页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
9N100
Preliminary
Power MOSFET
9A, 1000V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N100 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 9N100 is generally applied in high efficiency switch
mode power supplies.
FEATURES
* RDS(ON)=1.7Ω @ VGS=10V
* Fast Switching Speed
* 100% Avalanche Tested
* Improved dv/dt Capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-247
Packing
Lead Free
Halogen Free
9N100G-T47-T
1
2
3
9N100L-T47-T
G
D
S
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-735.a
9N100
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
1000
±30
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
V
Continuous Drain Current (TC=25°C)
Pulsed Drain Current (Note 1)
Avalanche Current (Note 1)
9
A
IDM
36
A
IAR
9
A
Single Pulsed Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (TC=25°C)
Linear Derating Factor above TC=25°C
Junction Temperature
EAS
850
mJ
V/ns
W
dv/dt
4.0
160
PD
1.28
+150
-55~+150
W/°C
°C
°C
TJ
Storage Temperature
TSTG
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=27mH, IAS=9A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤9A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
50
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
0.78
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
1000
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C
1.4
VDS=1000V, VGS=0V
10
Drain-Source Leakage Current
IDSS
IGSS
VDS=800V, TC=125°C
VDS=0V ,VGS=±30V
100
µA
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
±100 nA
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4A
3.0
5.0
V
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
1200 1700 mΩ
CISS
COSS
CRSS
2475 3220 pF
Output Capacitance
VDS=25V, VGS=0V, f=1.0MHz
195 255
16 24
pF
pF
Reverse Transfer Capacitance
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9N100
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
53
13
23
50
95
70
nC
nC
nC
ns
ns
ns
ns
Gate-Source Charge
VDS=800V, VGS=10V, ID=8A
Gate-Drain Charge
Turn-ON Delay Time
110
200
Turn-ON Rise Time
VDD=500V, ID=8A, RG=25Ω
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
122 254
80
170
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
9
A
A
V
ISM
VSD
36
1.4
IS =9A, VGS=0V
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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9N100
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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9N100
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
Unclamped Inductive Switching Waveforms
tP
Unclamped Inductive Switching Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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