9N50K-MT [UTC]

N-CHANNEL POWER MOSFET;


型号：	9N50K-MT
厂家：	Unisonic Technologies
描述：	N-CHANNEL POWER MOSFET
文件：	总7页 (文件大小：206K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

9N50K-MT

Power MOSFET

9A, 500V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 9N50K-MT is an N-channel mode power MOSFET

using UTC’s advanced technology to provide customers planar

stripe and DMOS technology. This technology allows a minimum

on-state resistance, superior switching performance. It also can

withstand high energy pulse in the avalanche and commutation

mode.

The UTC 9N50K-MT is generally applied in high efficiency switch

mode power supplies, active power factor correction and electronic

lamp ballasts based on half bridge topology.



FEATURES

* R_DS(ON)< 0.85Ω @ V_GS= 10 V, I_D= 4.5 A

* High Switching Speed

* Improved dv/dt Capability

* 100% Avalanche Tested



SYMBOL

 ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

Lead Free

Halogen Free

9N50KL-TA3-T

9N50KL-TF3-T

9N50KL-TF1-T

9N50KL-TF2-T

9N50KG-TA3-T

9N50KG-TF3-T

9N50KG-TF1-T

9N50KG-TF2-T

TO-220

TO-220F

TO-220F1

TO-220F2

Tube

Note: Pin Assignment: G: Gate D: Drain

S: Source

9N50KL-TA3-T

(1)Packing Type

(1) T: Tube

(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,

TF2: TO-220F2

(2)Package Type

(3)Green Package

(3) L: Lead Free, G: Halogen Free and Lead Free

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Power MOSFET



MARKING

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Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise noted)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous (T_C=25°C)

Pulsed (Note 2)

9 (Note 5)

36 (Note 5)

360

Drain Current

I_DM

Avalanche Energy

Single Pulsed (Note 3)

E_AS

V/ns

Peak Diode Recovery dv/dt (Note 4)

TO-220

dv/dt

4.5

140

Power Dissipation

Derate above 25°C

P_D

TO-220F/TO-220F1

TO-220F2

1.1

TO-220

W/°C

TO-220F/TO-220F1

TO-220F2

0.38

Junction Temperature

Storage Temperature

T_J

+150

°C

T_STG

-55~+150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 8mH, I_AS= 9A, V_DD= 50V, R_G= 25ꢀ, Starting T_J= 25°C

4. I_SD≤ 9A, di/dt ≤ 200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C

5. Drain current limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATING

62.5

UNIT

°C/W

Junction to Ambient

θ_JA

TO-220

0.8

Junction to Case

θ_JC

TO-220F/TO-220F1

TO-220F2

2.62

°C/W

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

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

V_DS=500V, V_GS=0V

_DS=400V, T_C=125°C

V_GS=+30V, V_DS=0V

_GS=-30V, V_DS=0V

500

Drain-Source Leakage Current

Gate- Source Leakage Current

µA

Forward

Reverse

+100 nA

-100 nA

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=4.5A

2.0

4.0

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.85

ꢀ

C_ISS

C_OSS

C_RSS

685

115

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Turn-ON Delay Time

Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

V_DD=30V, I_D=0.5A, R_G=25ꢀ

(Note 1, 2)

Turn-OFF Delay Time

Fall-Time

149

Total Gate Charge

Q_G

27.2

8.4

6.8

_DS=50V, I_D=1.3A, V_GS=10V

Gate to Source Charge

Gate to Drain Charge

Q_GS

Q_GD

(Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

I_S

I_SM

V_SD

1.4

I_S=9A, V_GS=0V

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature.

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Power MOSFET



TEST CIRCUITS AND WAVEFORMS

V_GS

Same Type

as DUT

Q_G

12V

10V

200nF

V_DS

Q_GS

Q_GD

50kΩ

300nF

V_GS

DUT

3mA

Charge

Gate Charge Test Circuit

Gate Charge Waveforms

Resistive Switching Test Circuit

Resistive Switching Waveforms

BV_DSS

BV_DSS-V_DD

V_DS

E_AS

LI_AS

BV_DSS

R_G

I_D

I_AS

10V

I_D(t)

DUT

t_P

V_DD

_DS(t)

Time

t_P

Unclamped Inductive Switching Waveforms

Unclamped Inductive Switching Test Circuit

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9N50K-MT

Power MOSFET

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TEST CIRCUITS AND WAVEFORMS(Cont.)

DUT

V_DS

R_G

I_SD

V_GS

V_DD

Driver

Same Type

as DUT

dv/dt controlled by R_G

I_SDcontrolled by pulse period

Peak Diode Recovery dv/dt Test Circuit & Waveforms

Gate Pulse Width

V_GS

Gate Pulse Period

10V

(Driver)

_FM, Body Diode Forward Current

I_SD

di/dt

(DUT)

I_RM

Body Diode Reverse Current

V_DS

(DUT)

Body Diode Recovery dv/dt

V_SD

V_DD

Body Diode Forward

Voltage Drop

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Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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