9N65K-MT [UTC]

N-CHANNEL POWER MOSFET;


型号：	9N65K-MT
厂家：	Unisonic Technologies
描述：	N-CHANNEL POWER MOSFET
文件：	总5页 (文件大小：205K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

9N65K-MT

Preliminary

Power MOSFET

9A, 650V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 9N65K-MT is an N-channel mode power MOSFET using

UTC’s advanced technology to provide customers with planar stripe

and DMOS technology. This technology allows a minimum on-state

resistance and superior switching performance. It also can withstand

high energy pulse in the avalanche and commutation mode.

The UTC 9N65K-MT is generally applied in high efficiency switch

mode power supplies and uninterruptible power supplies.



FEATURES

* R_DS(ON)< 1.1 Ω @ V_GS= 10 V, , I_D= 5.1 A

* High Switching Speed

* Improved dv/dt Capability

* 100% Avalanche Tested



SYMBOL

 ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

Tube

Lead Free

Halogen Free

9N65K-G-TF2-T

D: Drain S: Source

9N65K-L-TF2-T

TO-220F2

Note: Pin Assignment: G: Gate



MARKING

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Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

650

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±30

Continuous,

@T_C=25°C

I_D

V_GSS@10V

Drain Current

@T_C=100°C

5.4

Pulsed (Note 2)

I_DM

E_AS

Avalanche Energy Repetitive (Note 3)

Peak Diode Recovery dv/dt (Note 3)

Power Dissipation

375

V/ns

dv/dt

2.8

P_D

Derate above 25°C

0.39

+150

-55~+150

W/°C

°C

Junction Temperature

T_J

Storage Temperature

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive rating; pulse width limited by max. junction temperature.

3. L=9.25mH, I_AS=9A, V_DD= 50V, R_G= 25ꢀ, Starting T_J= 25°C

4. I_SD≤5.2A, di/dt≤90A/µs, V_DD≤BV_DSS, T_J≤150°C

5. Drain current limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

62.5

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

2.54

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9N65K-MT

Preliminary

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

BV_DSS

I_D=250µA, V_GS=0V

650

∆ BV_DSS/∆T_JReference to 25°C, I_D=1mA

0.67

V/°C

V_DS=650V, V_GS=0V

I_DSS

Drain-Source Leakage Current

Gate- Source Leakage Current

µA

V_DS=520V, V_GS=0V, T_J=125°C

250

Forward

Reverse

V_GS=+30V

I_GSS

+100 nA

-100 nA

V_GS=-30V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D=250µA

V_GS=10V, I_D=5.1A

2.0

4.0

1.1

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

ꢀ

C_ISS

C_OSS

C_RSS

870

122

V_DS=25V, V_GS=0V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Turn-ON Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Rise Time

V_DD=30V, I_D=0.5A, R_G=25ꢀ,

R_D= 62ꢀ (Note 1, 2)

Turn-OFF Delay Time

Fall-Time

160

Total Gate Charge

Q_G

29.8

8.6

7.3

_DS=50V, V_GS=10V, I_D=1.3A

Gate to Source Charge

Gate to Drain ("Miller") Charge

Q_GS

Q_GD

(Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

(Note 1)

I_S

I_SM

1.5

Drain-Source Diode Forward Voltage

V_SD

T_J=25°C, I_S=9A,V_GS=0V(Note 2)

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

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Preliminary

Power MOSFET



TEST CIRCUITS AND WAVEFORMS

V_DS

90%

10%

V_GS

t_D(ON)

t_D(OFF)

t_F

t_R

Switching Test Circuit

Switching Waveforms

V_GS

Q_G

10V

Q_GS

Q_GD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BV_DSS

I_AS

I_D(t)

V_DS(t)

V_DD

Time

t_p

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

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9N65K-MT

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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