9N65L-TF3-T 概述
9A, 650V N-CHANNEL POWER MOSFET 9A , 650V N沟道功率MOSFET
9N65L-TF3-T 数据手册
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9N65
Preliminary
Power MOSFET
9A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N65 is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 9N65 is generally applied in high efficiency switch mode
power supplies and uninterruptible power supplies.
FEATURES
* RDS(ON)=1.1Ω @ VGSS=10V
* High Switching Speed
* Improved dv/dt Capability
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
9N65G-TA3-T
9N65G-TF3-T
1
2
D
D
3
S
S
9N65L-TA3-T
TO-220
G
G
Tube
Tube
9N65L-TF3-T
TO-220F
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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9N65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
650
±30
9
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
V
@TC=25°C
A
Continuous,
ID
VGSS@10V
Drain Current
@TC=100°C
5.4
A
Pulsed (Note 2)
IDM
IAR
36
A
Avalanche Current (Note 2)
5.2
A
Single Pulsed (Note 2)
Repetitive (Note 3)
EAR
EAS
dv/dt
16
mJ
mJ
V/ns
Avalanche Energy
375
2.8
Peak Diode Recovery dv/dt (Note 3)
TO-220
TO-220F
TO-220
TO-220F
167
44
Power Dissipation(@TC=25°C)
W
PD
1.3
Linear Derating Factor
W/°C
0.35
+150
-55~+150
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Starting TJ=25°C, L=9.25mH, RG=25ꢀ, IAS=9A.
4. ISD≤5.2A, di/dt≤90A/µs, VDD≤BVDSS, TJ≤150°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62
UNIT
°C/W
TO-220
TO-220F
TO-220
TO-220F
Junction to Ambient
Junction to Case
θJA
62.5
0.75
θJC
°C/W
2.86
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9N65
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
650
V
Reference to 25°C, ID=1mA
(Note 3)
∆ BVDSS /∆TJ
0.67
V/°C
V
DS=650V, VGS=0V
VDS=520V, VGS=0V, TJ=125°C
GS=+30V
25
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
IGSS
µA
250
Forward
Reverse
V
+100 nA
-100 nA
VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS= VGS, ID=250µA
VGS=10V, ID=5.1A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.85 1.1
ꢀ
CISS
COSS
CRSS
1417
177
7
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
48
12
nC
nC
nC
ns
ns
ns
ns
VDS=520V, VGS=10V, ID=9A
(Note 2)
Gate to Source Charge
Gate to Drain ("Miller") Charge
Turn-ON Delay Time
19
14
Rise Time
20
VDD=325V, ID=9A, RG=9.1ꢀ,
RD = 62ꢀ (Note 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
34
18
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
MOSFET symbol
9
A
A
V
showing the integral
reverse p-n junction
diode.
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
36
1.5
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=9A,VGS=0V(Note 2)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
3. Uses IRFIB5N65A data and test conditions
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9N65
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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9N65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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