9N65 [UTC]

9A, 650V N-CHANNEL POWER MOSFET; 9A ， 650V N沟道功率MOSFET


型号：	9N65
厂家：	Unisonic Technologies
描述：	9A, 650V N-CHANNEL POWER MOSFET 9A ， 650V N沟道功率MOSFET
文件：	总5页 (文件大小：173K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

9N65

Preliminary

Power MOSFET

9A, 650V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC 9N65 is an N-channel mode power MOSFET using UTC’s

advanced technology to provide customers with planar stripe and

DMOS technology. This technology allows a minimum on-state

resistance and superior switching performance. It also can withstand

high energy pulse in the avalanche and commutation mode.

The UTC 9N65 is generally applied in high efficiency switch mode

power supplies and uninterruptible power supplies.

FEATURES

* R_DS(ON)=1.1Ω @ V_GSS=10V

* High Switching Speed

* Improved dv/dt Capability

* 100% Avalanche Tested

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Lead Free

Pin Assignment

Package

Packing

Halogen Free

9N65G-TA3-T

9N65G-TF3-T

9N65L-TA3-T

TO-220

Tube

9N65L-TF3-T

TO-220F

Note: Pin Assignment: G: Gate

D: Drain

S: Source

www.unisonic.com.tw

1 of 5

QW-R502-618.d

9N65

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

650

±30

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

@T_C=25°C

Continuous,

I_D

V_GSS@10V

Drain Current

@T_C=100°C

5.4

Pulsed (Note 2)

I_DM

I_AR

Avalanche Current (Note 2)

5.2

Single Pulsed (Note 2)

Repetitive (Note 3)

E_AR

E_AS

dv/dt

V/ns

Avalanche Energy

375

2.8

Peak Diode Recovery dv/dt (Note 3)

TO-220

TO-220F

TO-220

TO-220F

167

Power Dissipation(@T_C=25°C)

P_D

1.3

Linear Derating Factor

W/°C

0.35

+150

-55~+150

Junction Temperature

Storage Temperature

T_J

°C

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive rating; pulse width limited by max. junction temperature.

3. Starting T_J=25°C, L=9.25mH, R_G=25ꢀ, I_AS=9A.

4. I_SD≤5.2A, di/dt≤90A/µs, V_DD≤BV_DSS, T_J≤150°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

°C/W

TO-220

TO-220F

TO-220

TO-220F

Junction to Ambient

Junction to Case

θ_JA

62.5

0.75

θ_JC

°C/W

2.86

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

QW-R502-618.d

www.unisonic.com.tw

9N65

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

BV_DSS

I_D=250µA, V_GS=0V

650

Reference to 25°C, I_D=1mA

(Note 3)

∆ BV_DSS/∆T_J

0.67

V/°C

_DS=650V, V_GS=0V

V_DS=520V, V_GS=0V, T_J=125°C

_GS=+30V

Drain-Source Leakage Current

Gate- Source Leakage Current

I_DSS

I_GSS

µA

250

Forward

Reverse

+100 nA

-100 nA

V_GS=-30V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D=250µA

V_GS=10V, I_D=5.1A

2.0

4.0

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.85 1.1

ꢀ

C_ISS

C_OSS

C_RSS

1417

177

Output Capacitance

V_DS=25V, V_GS=0V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

V_DS=520V, V_GS=10V, I_D=9A

(Note 2)

Gate to Source Charge

Gate to Drain ("Miller") Charge

Turn-ON Delay Time

Rise Time

V_DD=325V, I_D=9A, R_G=9.1ꢀ,

R_D= 62ꢀ (Note 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

I_S

MOSFET symbol

showing the integral

reverse p-n junction

diode.

Maximum Body-Diode Pulsed Current

(Note 1)

I_SM

1.5

Drain-Source Diode Forward Voltage

V_SD

T_J=25°C, I_S=9A,V_GS=0V(Note 2)

Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.

2. Pulse width≤300µs; duty cycle≤2%.

3. Uses IRFIB5N65A data and test conditions

UNISONIC TECHNOLOGIES CO., LTD

3 of 5

QW-R502-618.d

www.unisonic.com.tw

9N65

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

V_DS

90%

10%

V_GS

t_D(ON)

t_D(OFF)

t_F

t_R

Switching Test Circuit

Switching Waveforms

V_GS

Q_G

10V

Q_GS

Q_GD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BV_DSS

I_AS

I_D(t)

V_DS(t)

V_DD

Time

t_p

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD

4 of 5

QW-R502-618.d

www.unisonic.com.tw

9N65

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

5 of 5

QW-R502-618.d

www.unisonic.com.tw

相关型号：