B772SS-E-AE3-R [UTC]

MEDIUM POWER LOW VOLTAGE TRANSISTOR; 中功率低电压晶体管
B772SS-E-AE3-R
型号: B772SS-E-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

MEDIUM POWER LOW VOLTAGE TRANSISTOR
中功率低电压晶体管

晶体 小信号双极晶体管 开关 光电二极管
文件: 总4页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
B772SS  
PNP SILICON TRANSISTOR  
MEDIUM POWER LOW  
VOLTAGE TRANSISTOR  
DESCRIPTION  
3
The UTC B772SS is a medium power low voltage transistor,  
designed for audio power amplifier, DC-DC converter and voltage  
regulator.  
1
2
FEATURES  
SOT-23  
* High current output up to 3A  
* Low saturation voltage  
* Complement to D882SS  
*Pb-free plating product number: B772SSL  
ORDERING INFORMATION  
Order Number  
Package  
Pin Assignment  
Packing  
Normal  
Lead Free Plating  
B772SSL-x-AE3-R  
1
2
3
B772SS-x-AE3-R  
SOT-23  
E
B
C
Tape Reel  
B772SSL-x-AE3-R  
(1)Packing Type  
(2)Package Type  
(1) R: Tape Reel  
(2) AE3: SOT-23  
(3) x: refer to Classification of h  
(3)Rank  
FE2  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
MARKING  
B72  
Lead Plating  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R206-089,B  
B772SS  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (Ta = 25  
)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICP  
RATINGS  
UNIT  
V
Collector-Base Voltage  
-40  
-30  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-5  
V
Pulse  
DC  
-7  
A
Collector Current  
Base Current  
IC  
-3  
A
IB  
-0.6  
10  
A
Tc=25  
W
mW  
Collector Dissipation  
PD  
Ta=25  
350  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN  
-40  
-30  
-5  
TYP  
MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
BVCBO IC=-100µA, IE=0  
BVCEO IC=-1mA, IB=0  
BVEBO IE=-100µA, IC=0  
V
V
V
ICBO  
ICEO  
IEBO  
hFE1  
hFE2  
VCB=-30V ,IE=0  
VCE=-30V ,IB=0  
VEB=-3V, IC=0  
-1000  
-1000  
-1000  
nA  
nA  
nA  
Collector Cut-Off Current  
Emitter Cut-Off Current  
VCE=-2V, IC=-20mA  
30  
100  
200  
150  
-0.3  
-1.0  
80  
DC Current Gain(Note 1)  
VCE=-2V, IC=-1A  
400  
-0.5  
-2.0  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE(SAT) IC=-2A, IB=-0.2A  
VBE(SAT) IC=-2A, IB=-0.2A  
V
V
fT  
VCE=-5V, IC=-0.1A  
MHz  
pF  
Cob  
VCB=-10V, IE=0,f=1MHz  
45  
Note 1: Pulse test: PW<300µs, Duty Cycle<2%  
CLASSIFICATION OF hFE2  
RANK  
Q
P
E
RANGE  
100 ~ 200  
160 ~ 320  
200 ~ 400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-089.B  
www.unisonic.com.tw  
B772SS  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERICS  
Derating Curve of Safe Operating Areas  
Static Characteristics  
150  
100  
1. 6  
-IB  
=9mA  
-I =8mA  
-I =7mA  
B
B
1. 2  
0. 8  
-IB=6mA  
-IB=5mA  
D
i
s
s
i
p
-IB  
=4mA  
a
t
i
50  
o
n
l
-I  
B
B
=3mA  
=2mA  
i
m
i
t
0. 4  
0
e
d
-I  
-IB  
=1mA  
0
0
4
8
12  
16  
20  
-50  
0
50  
100  
150  
200  
-Collector-Emitter voltage (V)  
Power Derating  
Case Temperature, Tc ()  
Collector Output Capacitance  
3
2
1
10  
10  
10  
12  
I
E
=0  
f=1MHz  
8
4
0
0
10  
0
-1  
-2  
-3  
-50  
0
50  
100  
150  
200  
10  
10  
10  
10  
Case Temperature, Tc (  
)  
-Collector-Base Voltage(v)  
Current Gain-  
Bandwidth Product  
Safe Operating Area  
3
2
1
1
Ic(max),Pulse  
Ic(max),DC  
0.  
1
m
10  
10  
10  
10  
S
1
0
m
1
m
S
S
V
CE=5V  
0
10  
10  
IB  
=8mA  
-1  
0
-2  
10  
10  
-2  
-1  
0
1
0
1
2
10  
10  
10  
10  
10  
10  
10  
Collector-Emitter Voltage  
Collector Current, Ic (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-089.B  
www.unisonic.com.tw  
B772SS  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERICS(Cont.)  
DC Current Gain  
Saturation Voltage  
3
4
3
10  
10  
10  
VCE=-2V  
VBE(SAT )  
2
10  
2
1
0
10  
10  
10  
V
CE(SAT)  
1
10  
0
10  
0
1
2
3
4
0
1
2
3
4
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
-Collector Current, Ic (mA)  
-Collector Current, Ic (mA)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-089.B  
www.unisonic.com.tw  

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