B772SSP [UTC]

Transistor;


型号：	B772SSP
厂家：	Unisonic Technologies
描述：	Transistor
文件：	总3页 (文件大小：60K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UTC B772SS

PNPEPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE

TRANSISTOR

DESCRIPTION

The UTC B772SS is a medium power low voltage

transistor, designed for audio power amplifier, DC-DC

converter and voltage regulator.

FEATURES

*High current output up to 3A

*Low saturation voltage

*Complement to D882SS

MARKING

SOT-23

B72

1: EMITTER 2: BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS ^{( Ta=25°C ,unless otherwise specified )}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

-40

-30

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation( Tc=25°C)

Collector Dissipation( Ta=25°C)

Collector Current(DC)

Collector Current(PULSE)

Base Current

-3

-7

-0.6

Junction Temperature

Storage Temperature

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS^{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain(note 1)

SYMBOL

TEST CONDITIONS

VCB=-30V,IE=0

MIN TYP MAX UNIT

ICBO

IEBO

hFE1

hFE2

-1000

VEB=-3V,Ic=0

VCE=-2V,Ic=-20mA

VCE=-2V,Ic=-1A

100

200

150

-0.3

-1.0

400

-0.5

-2.0

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE(sat)

Ic=-2A,IB=-0.2A

VCE=-5V,Ic=-0.1A

VCB=-10V,IE=0,f=1MHz

MHz

Cob

Note 1:Pulse test:PW<300µs,Duty Cycle<2%

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R206-017,A

UTC B772SS

PNPEPITAXIAL SILICON TRANSISTOR

CLASSIFICATION OF hFE

RANK

RANGE

100-200

160-320

200-400

TYPICAL PERFORMANCE CHARACTERISTICS

Fig.2 Derating curve of safe

Fig.1 Static characteristics

Fig.3 Power Derating

operating areas

150

1.6

-IB=9mA

-IB=8MA

-IB=7mA

100

1.2

-IB=6mA

-IB=5mA

0.8

-IB=4mA

-IB=3mA

-IB=2mA

-IB=1mA

0.4

-50

100

150

200

-50

100

150

200

-Collector-Emitter voltage(V)

Tc,Case Temperature(°C)

Fig.4 Collector Output

capacitance

Fig.5 Current gain-

bandwidth product

Fig.6 Safe operating area

Ic(max),Pulse

Ic(max),DC

VCE=5V

E=0

f=1MHz

=8mA

-1

-2

-1

-2

-3

-2

-1

Collector-Emitter Voltage

Ic,Collector current(A)

-Collector-Base Voltage(v)

Fig.7 DC current gain

Fig.8 Saturation Voltage

CE=-2V

VBE(sat)

VCE(sat)

-Ic,Collector current(mA)

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R206-017,A

UTC B772SS

PNPEPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R206-017,A

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