BAW56G-AE3-R [UTC]
Rectifier Diode, 2 Element, 0.075A, 75V V(RRM), Silicon, TO-236, HALOGEN AND LEAD FREE PACKAGE-3;
| 型号： | BAW56G-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Rectifier Diode, 2 Element, 0.075A, 75V V(RRM), Silicon, TO-236, HALOGEN AND LEAD FREE PACKAGE-3 光电二极管 |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BAW56
Preliminary
DIODE
DUAL SURFACE MOUNT
SWITCHING DIODE
DESCRIPTION
The UTC BAW56 is a dual surface mount switching diode
providing the designers with ultra-fast switching and high
conductance.
The UTC BAW56 is suitable for general purpose switching
applications.
FEATURES
* Ultra-fast switching
* Low switching loss
* High Conductance
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number
BAW56G-AE3-R
Package
SOT-23
Packing
1
2
3
K1
K2
A2A1
Tape Reel
Note: Pin Assignment: A: Anode K: Cathode
BAW56G-AE3-R
(1)Packing Type
(1) R: Tape Reel
(2) AE3: SOT-23
(2)Package Type
(3)Green Package
(3) G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R601-269.b
BAW56
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VRM
RATINGS
UNIT
V
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
75
VRRM
VRWM
VR
V
75
V
75
V
RMS Reverse Voltage
VR(RMS)
IFM
53
V
Forward Continuous Current (Note 2)
Average Rectified Output Current
300
mA
mA
IO
150
t=1.0µs
t=1.0s
2.0
Non-Repetitive Peak Forward Surge Current
IFSM
A
1.0
Power Dissipation (Note 2)
Junction Temperature
Storage Temperature
PD
TJ
350
mW
°C
-65 ~ +150
-65 ~ +150
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 2)
SYMBOL
RATINGS
357
UNIT
°C/W
θJA
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VBR(R)
TEST CONDITIONS
IR = 2.5µA
MIN TYP MAX UNIT
Reverse Breakdown Voltage
Forward Voltage (Note 1, 3)
75
V
V
IF = 1.0mA
0.715
0.855
1.0
IF = 10mA
V
VF
IF = 50mA
V
IF = 150mA
1.25
2.5
V
VR = 75V
µA
µA
µA
nA
pF
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
50
Peak Reverse Current (Note 1)
IR
30
25
Junction Capacitance
CJ
trr
VR = 0, f = 1.0MHz
IF = IR = 10mA, IRR = 0.1 x IR,
RL = 100Ω
2.0
Reverse Recovery Time
4.0
ns
Notes: 1.Short duration test pulse used to minimize self-heating effect.
2. Part mounted on FR-4 PC board with recommended pad layout.
3. Pulse Test: Pulse Width: 300μs, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R601-269.b
www.unisonic.com.tw
BAW56
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R601-269.b
www.unisonic.com.tw
相关型号：
BAW56L
DIODE 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, MICRO MINIATURE PACKAGE-3, Signal Diode
VISHAY
BAW56L-AE3-R
Rectifier Diode, 2 Element, 0.075A, 75V V(RRM), Silicon, TO-236, LEAD FREE PACKAGE-3
UTC
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