BC337G-16-T92-K [UTC]

Small Signal Bipolar Transistor,;


型号：	BC337G-16-T92-K
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor, 开关晶体管
文件：	总3页 (文件大小：142K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

BC337/BC338

NPN SILICON TRANSISTOR

SWITCHING AND AMPLIFIER

APPLICATIONS

FEATURES

* Suitable for AF-Driver stages and low power output stages

* Complement to UTC BC327/328

TO-92

ORDERING INFORMATION

Ordering Number

Lead Free

Pin Assignment

Package

Packing

Halogen Free

BC337L-x-T92-B

BC337L-x-T92-K

BC337L-x-T92-R

BC338L-x-T92-B

BC338L-x-T92-K

BC338L-x-T92-R

BC337G-x-T92-B

BC337G-x-T92-K

BC337G-x-T92-R

BC338G-x-T92-B

BC338G-x-T92-K

BC338G-x-T92-R

TO-92

Tape Box

Bulk

Tape Reel

Tape Box

Bulk

Tape Reel

www.unisonic.com.tw

1 of 3

QW-R201-039.D

BC337/BC338

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CES

RATINGS

UNIT

BC337

BC338

BC337

BC338

Collector-Emitter Voltage

V_CEO

Emitter-Base Voltage

Collector Current (DC)

Collector Dissipation

Derate Above 25°C

V_EBO

I_C

800

625

mW/°C

°C

P_C

Junction Temperature

Operating Temperature

Storage Temperature

T_J

125

T_OPR

T_STG

-20 ~ +85

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

200

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_Jc

83.3

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

BC337

BC338

BC337

BC338

Collector-Emitter Breakdown Voltage

BV_CEOI_C=10mA, I_B=0

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BV_CESI_C=0.1mA, V_BE=0

BV_EBOI_E=0.1mA, I_C=0

BC337

BC338

V_CE=45V, I_B=0

I_CES

100

630

V_CE=25V, I_B=0

h_FE1

h_FE2

V_CE=1V, I_C=100mA

V_CE=1V, I_C=300mA

100

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter on Voltage

V_CE(SAT)I_C=500mA, I_B=50mA

V_BE(ON)V_CE=1V, I_C=300mA

0.7

1.2

Output Capacitance

C_ob

f_T

V_CB=10V, I_E=0, f=1MHz

Current Gain Bandwidth Product

V_CE=5V, I_C=10mA, f=50MHz

100

MHz

CLASSIFICATION OF h_FE1

RANK

h_FE1

250-630

100-250

160-400

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R201-039.D

www.unisonic.com.tw

BC337/BC338

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Collector Current vs.

Base-Emitter Voltage

Collector Power Dissipation vs.

Ambient Temperature

700

600

Common Emitter

V_CE=1V

500

400

300

100

300

200

100

0.2

175

0.6

0.8

25 50

75 100

125 150

Ambient Temperature, T_A(℃)

0.4

1.0

Base-Emitter Voltage, V_BE(V)

Collector Current vs.

Collector-Emitter Voltage

0.7

0.6

I_B=10mA

I_B=9mA

I_B=7mA

I_B=8mA

I_B=6mA

0.5

0.4

0.3

I_B=5mA

I_B=4mA

I_B=3mA

I_B=2mA

0.2

0.1

I_B=1mA

9 10

Collector-Emitter Voltage, V_CE(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

3 of 3

QW-R201-039.D

www.unisonic.com.tw

相关型号：