BC546G-X-T92-B [UTC]

SWITCHING AND AMPLIFIER APPLICATION;


型号：	BC546G-X-T92-B
厂家：	Unisonic Technologies
描述：	SWITCHING AND AMPLIFIER APPLICATION 放大器开关
文件：	总4页 (文件大小：199K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

BC546/547/548

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER

APPLICATIONS



FEATURES

* High Voltage: UTC BC546, V_CEO=65V

UTC BC547, V_CEO=45V

UTC BC548, V_CEO=30V

TO-92



ORDERING INFORMATION

Order Number

Lead Free

Pin Assignment

Package

Packing

Halogen Free

BC546L-x-T92-B

BC546L-x-T92-K

BC547L-x-T92-B

BC547L-x-T92-K

BC548L-x-T92-B

BC548L-x-T92-K

BC546G-x-T92-B

BC546G-x-T92-K

BC547G-x-T92-B

BC547G-x-T92-K

BC548G-x-T92-B

BC548G-x-T92-K

TO-92

Tape Box

Bulk

Tape Box

Bulk

Tape Box

Bulk

Note: Pin Assignment: C: Collector B: Base

E: Emitter

BC546L-x-T92-B

(1)Packing Type

(1) B: Tape Box, K: Bulk

(2) T92: TO-92

(2)Package Type

(3)Rank

(3) x: refer to CLASSIFICATION OF h_FE

(4) L: Lead Free, G: Halogen Free

(4)Halogen Free



MARKING

BC546

BC547

BC548

www.unisonic.com.tw

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QW-R201-037.D

BC546/547/548

NPN EPITAXIAL SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

BC546

BC547

BC548

BC546

BC547

BC548

BC546

BC547

BC548

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

V_CBO

V_CEO

V_EBO

Collector current (DC)

Collector dissipation

Junction Temperature

Storage Temperature

I_C

P_C

100

°C

500

T_J

150

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

I_CBO

TEST CONDITIONS

V_CB=30V, I_E=0

MIN TYP MAX UNIT

Collector Cut-off Current

DC current gain

h_FE

V_CE=5V, I_C=2mA

110

800

250

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

MHz

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter on voltage

V_CE(SAT)

V_BE(SAT)

V_BE(ON)

200 600

700

900

V_CE=5V, I_C=2mA

580 660 700

V_CE=5V, I_C=10mA

720

300

Current gain bandwidth product

Output Capacitance

Input Capacitance

f_T

V_CE=5V, I_C=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

C_ob

C_ib

3.5

V_EB=0.5V, I_C=0, f=1MHz

V_CE=5V, I_C=200μA, f=1KHz, R_G=2KΩ

Noise Figure



CLASSIFICATION OF h_FE

RANK

h_FE

110 - 220

200 – 450

420 - 800

UNISONIC TECHNOLOGIES CO., LTD

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BC546/547/548

NPN EPITAXIAL SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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BC546/547/548

NPN EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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