BC558-C-T92-K [UTC]

Transistor;


型号：	BC558-C-T92-K
厂家：	Unisonic Technologies
描述：	Transistor
文件：	总4页 (文件大小：199K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

BC556/557/558

PNP SILICON TRANSISTOR

SWITCHING AND AMPLIFIER

APPLICATIONS

FEATURES

* High Voltage: BC556, V_CEO=-65V

TO-92

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

BC556L-x-T92-B

BC556L-x-T92-K

BC557L-x-T92-B

BC557L-x-T92-K

BC558L-x-T92-B

BC558L-x-T92-K

Halogen Free

BC556-x-T92-B

BC556-x-T92-K

BC557-x-T92-B

BC557-x-T92-K

BC558-x-T92-B

BC558-x-T92-K

BC556G-x-T92-B

BC556G-x-T92-K

BC557G-x-T92-B

BC557G-x-T92-K

BC558G-x-T92-B

BC558G-x-T92-K

TO-92

Tape Box

Bulk

Tape Box

Bulk

Tape Box

Bulk

www.unisonic.com.tw

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QW-R201-051.C

BC556/557/558

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

-80

UNIT

BC556

BC557

BC558

BC556

BC557

BC558

Collector-Base Voltage

Collector-Emitter Voltage

V_CBO

-50

-30

-65

V_CEO

-45

-30

Emitter-Base Voltage

V_EBO

I_C

-5

Collector Current (DC)

Power Collector Dissipation

-100

625

mW/°C

°C

P_C

Linear Derating Factor above (Ta=25°C)

Junction Temperature

T_J

150

Storage Temperature

T_STG

-55~+150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

200

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_Jc

83.3

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

BC556

BC557

BC558

BC556

BC557

BC558

-65

-45

-30

-80

-50

-30

-5.0

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

BV_CEOI_C=-10mA, I_B=0

BV_CBOI_C=-100μA

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

DC Current Gain

BV_EBOI_E=-10μA, I_C=0

I_CBO

h_FE

I_E= 0, V_CB=-30 V

-15

V_CE=-5V, I_C=2mA

110

800

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

V_CE=-5 V,I_C=-2mA

-90 -300 mV

-250 -650 mV

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

V_CE(SAT)

V_BE(SAT)

V_BE(ON)

-700

-900

-600 -660 -750 mV

-800 mV

V_CE=-5 V,I_C=-10mA

V_CE=-5V, I_C=-10mA, f =10MHz

V_CB=-10V, I_E=0, f=1MHz

Current Gain Bandwidth Product

Output Capacitance

f_T

150

MHz

C_OB

_CE=-5V, I_C=-200μA

Noise Figure

f=1KHz, R_G=2KΩ

CLASSIFICATION OF h_FE

RANK

h_FE

110 - 220

200 - 450

420 - 800

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R201-051.C

www.unisonic.com.tw

BC556/557/558

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

QW-R201-051.C

www.unisonic.com.tw

BC556/557/558

PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R201-051.C

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