BC817_09 [UTC]
NPN GENERAL PURPOSE AMPLIFIER; NPN通用放大器
| 型号： | BC817_09 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN GENERAL PURPOSE AMPLIFIER |
| 文件： | 总4页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BC817
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
The UTC BC817 is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2A.
Lead-free:
BC817L
Halogen-free:BC817G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
BC817G-x-AE3-R
BC817G-x-AL3-R
1
E
E
2
B
B
3
C
C
BC817-x-AE3-R
BC817-x-AL3-R
BC817L-x-AE3-R
BC817L-x-AL3-R
SOT-23
Tape Reel
Tape Reel
SOT-323
(1) R: Tape Reel
BC817L-x-AE3-R
(1)Packing Type
(2) AE3: SOT-23, AL3: SOT-323
(3) x: refer to Classification of hFE
(2)Package Type
(3)Rank
(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
(4)Lead Plating
MARKING
BC817-16
BC817-25
BC817-40
6A
6B
6C
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-025.E
BC817
NPNSILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
RATINGS
50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
45
V
5.0
V
Collector Current -Continuous
1.5
A
SOT-23
310
mW
mW
°C
°C
Collector Dissipation
PC
SOT-323
200
Junction Temperature
Storage Temperature
TJ
+150
-65 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
BVCEO
BVCES
BVEBO
IC=10mA, IB=0
45
50
5
V
IC=100μA,IE=0
IE=10μA, Ic=0
VCB=20V
V
V
100 nA
Collector Cut-OFF Current
ON CHARACTERISTICS
DC Current Gain
ICBO
VCB=20V,Ta=150°C
5
μA
hFE1
hFE2
IC=100mA,VCE=1.0V
IC =500mA, VCE=1.0V
IC =500mA,IB=50mA
IC =500mA, VCE=1.0V
See Classification
40
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE(SAT)
VBE(ON)
0.7
1.2
V
V
CLASSIFICATION OF hFE1
RANK
16
100-250
25
40
RANGE
160-400
250-600
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-025.E
www.unisonic.com.tw
BC817
NPNSILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-025.E
www.unisonic.com.tw
BC817
NPNSILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-025.E
www.unisonic.com.tw
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