BC847-A-AE3-R [UTC]

SWITCHING AND AMPLIFIER APPLICATION; 开关和放大器应用
BC847-A-AE3-R
型号: BC847-A-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

SWITCHING AND AMPLIFIER APPLICATION
开关和放大器应用

开关 放大器
文件: 总4页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
BC846-BC850  
NPN SILICON TRANSISTOR  
SWITCHING AND AMPLIFIER  
APPLICATION  
3
1
2
FEATURES  
SOT-23  
* Suitable for automatic insertion in thick and thin-film  
circuits.  
* Complement to BC856 … BC860  
3
1
2
SOT-323  
*Pb-free plating product number:  
BC846L/BC847L/BC848L/BC849L/BC850L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1
E
E
E
E
E
E
E
E
E
E
2
B
B
B
B
B
B
B
B
B
B
3
BC846-x-AE3-R  
BC847-x-AE3-R  
BC848-x-AE3-R  
BC849-x-AE3-R  
BC850-x-AE3-R  
BC846-x-AL3-R  
BC847-x-AL3-R  
BC848-x-AL3-R  
BC849-x-AL3-R  
BC850-x-AL3-R  
BC846L-x-AE3-R  
BC847L-x-AE3-R  
BC848L-x-AE3-R  
BC849L-x-AE3-R  
BC850L-x-AE3-R  
BC846L-x-AL3-R  
BC847L-x-AL3-R  
BC848L-x-AL3-R  
BC849L-x-AL3-R  
BC850L-x-AL3-R  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
C
C
C
C
C
C
C
C
C
C
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
BC846L-x-AE3-R  
(1)Packing Type  
(2)Package Type  
(3)Rank  
(1) R: Tape Reel  
(2) AE3: SOT-23, AL3: SOT-323  
(3) x: refer to Classification of h  
FE  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
MARKING  
BC846  
BC847  
BC848  
BC849  
BC850  
8A  
8B  
8C  
8D  
8E  
: Rank Code,refer to Classification of hFE  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R206-027,C  
BC846-BC850  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (Ta=25, unless otherwise specified)  
PARAMETER  
BC846  
SYMBOL  
VCBO  
VALUE  
80  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
BC847 / BC850  
BC848 / BC849  
BC846  
50  
V
30  
V
65  
V
VCEO  
BC847 / BC850  
BC848 / BC849  
BC846 / BC847  
BC848 / BC849 /  
BC850  
45  
V
30  
V
6
V
VEBO  
5
V
Collector Current (DC)  
Collector Dissipation  
Ic  
100  
310  
mA  
mW  
mW  
SOT-23  
PD  
SOT-323  
200  
Junction Temperature  
Storage Temperature  
TJ  
+150  
°
°
C
C
TSTG  
-40 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta=25  
°
C, unless otherwise specified)  
TEST CONDITIONS  
VCB=30V, IE=0  
PARAMETER  
SYMBOL  
ICBO  
MIN TYP MAX UNIT  
Collector Cut-Off Current  
DC Current Gain  
15  
nA  
hFE  
VCE=5.0V, Ic=2.0mA  
Ic=10mA,IB=0.5mA  
Ic=100mA,IB=5.0mA  
Ic=10mA,IB=0.5mA  
Ic=100mA,IB=5.0mA  
VCE=5.0V,Ic=2.0mA  
VCE=5.0V,Ic=10mA  
110  
800  
250  
90  
mV  
mV  
mV  
mV  
mV  
mV  
Collector-Emitter Saturation Voltage  
Collector-Base Saturation Voltage  
Base-Emitter On Voltage  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
fT  
200 600  
700  
900  
580 660 700  
720  
VCE=5.0V,Ic=10mA  
Current Gain Bandwidth Product  
300  
MHz  
f=100MHz  
Output Capacitance  
Input Capacitance  
Cob  
Cib  
VCB=10V, IE=0, f=1.0MHz  
VEB=0.5V, IC=0, f=1.0MHz  
3.5  
9
6
pF  
pF  
dB  
dB  
dB  
dB  
BC846/BC847/BC848  
V
CE=5V, Ic=200  
µ
A,  
2
10  
4
f=1KHz, RG=2K  
BC849/BC850  
Noise Figure  
1.2  
1.4  
1.4  
NF  
V
CE=5V, IC=200  
µ
A,  
BC849  
4
RG=2K, f=30~15000Hz  
BC850  
3
CLASSIFICATION OF hFE  
RANK  
A
B
C
RANGE  
110-220  
200-450  
420-800  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-027,C  
www.unisonic.com.tw  
BC846-BC850  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Static Characteristic  
DC Current Gain  
100  
10000  
IB=400µA  
IB=350µA  
IB=300µA  
80  
1000  
100  
IB=250µA  
60  
40  
VCE=5V  
IB=200µA  
IB=150µA  
IB=100µA  
20  
0
IB=50µA  
10  
1
0
4
8
12 16  
20  
10  
100  
1000  
Collector-Emitter Voltage, VCE(V)  
Collector Current, IC(mA)  
Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter on Voltage  
VCE=2V  
10000  
100  
10  
1
IC=10IB  
VBE(SAT)  
1000  
100  
VCE(sat)  
10  
1
0.1  
10  
100  
1000  
0.1 0.2 0.4 0.6 0.8 1.0 1.2  
Collector Curren,t IC(mA)  
Base-Emitter Voltage, VBE(V)  
Collector Output Capacitance  
f=1MHz  
Current Gain Bandwidth Product  
100  
10  
1
1000  
V=5V  
100  
10  
1
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
Collector-Base Voltage, VCB(V)  
Collector Current, IC(mA)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-027,C  
www.unisonic.com.tw  
BC846-BC850  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-027,C  
www.unisonic.com.tw  

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