BC847A(SOT-23) [UTC]

Small Signal Bipolar Transistor, 0.1A I(C), NPN;


型号：	BC847A(SOT-23)
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor, 0.1A I(C), NPN 开关光电二极管晶体管
文件：	总4页 (文件大小：102K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UTC BC846/BC847/BC848/BC849/BC850

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER

APPLICATION

FEATURES

*Suitable for automatic insertion in thick and thin-film

circuits.

*Complement to BC856 … BC860

SOT-23

1: EMITTER 2: BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise noted)}

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

BC846

BC847 / BC850

BC848 / BC849

Collector-Emitter Voltage

VCEO

VEBO

BC846

BC847 / BC850

BC848 / BC849

Emitter-Base Voltage

BC846 / BC847

BC848 / BC849 / BC850

Collector Current (DC)

100

310

150

°C

Collector Dissipation

Junction Temperature

Storage Temperature

Tstg

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise noted)}

PARAMETER

Collector Cut-Off Current

DC Current Gain

SYMBOL

ICBO

TEST CONDITIONS

VCB=30V, I_E=0

VCE=5.0V, Ic=2.0mA

MIN

TYP

MAX UNITS

hFE

110

800

250

600

Collector-Emitter Saturation

VCE(sat) Ic=10mA,IB=0.5mA

200

Voltage

Ic=100mA,IB=5.0mA

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R206-027,A

UTC BC846/BC847/BC848/BC849/BC850

NPN EPITAXIAL SILICON TRANSISTOR

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

700

900

660

MAX UNITS

Collector-Base Saturation Voltage

VBE(sat) Ic=10mA,IB=0.5mA

Ic=100mA,IB=5.0mA

Base-Emitter On Voltage

VBE(on) VCE=5.0V,Ic=2.0mA

VCE=5.0V,Ic=10mA

580

700

720

Current Gain Bandwidth Product

VCE=5.0V,Ic=10mA

f=100MHz

300

MHz

Output Capacitance

Input Capacitance

Noise Figure:

BC846/BC847/BC848

BC849/BC850

BC849

Cob

Cib

VCB=10V, I_E=0, f=1.0MHz

VEB=0.5V, I_C=0, f=1.0MHz

3.5

V_CE=5V, Ic=200µA,

f=1KHz, R_G=2KΩ

V_CE=5V, I_C=200µA,

R_G=2KΩ, f=30~15000Hz

1.2

1.4

BC850

Classification of h_FE

RANK

RANGE

110-220

200-450

420-800

Marking Code

P/N

RANK

MARK

8AA

8BA

8CA

8DA

8EA

RANK

MARK

8AB

8BB

8CB

8DB

8EB

RANK

MARK

BC846

BC847

BC848

BC849

BC850

8AC

8BC

8CC

8DC

8EC

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R206-027,A

UTC BC846/BC847/BC848/BC849/BC850

NPN EPITAXIAL SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R206-027,A

UTC BC846/BC847/BC848/BC849/BC850

NPN EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R206-027,A

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