BC856-A-AE3-R [UTC]

SWITCHING AND AMPLIFIER APPLICATIONS; 开关和放大器应用
BC856-A-AE3-R
型号: BC856-A-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

SWITCHING AND AMPLIFIER APPLICATIONS
开关和放大器应用

晶体 开关 放大器 小信号双极晶体管
文件: 总4页 (文件大小:176K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
BC856/BC857/BC858  
PNP SILICON TRANSISTOR  
SWITCHING AND AMPLIFIER  
APPLICATIONS  
„
FEATURES  
*Suitable for automatic insertion in thick and thin-film  
circuits  
*Complement to BC846/BC847/BC848  
*Pb-free plating product number:  
BC856L/BC857L/BC858L  
„ ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
BC856L-x-AE3-R  
BC857L-x-AE3-R  
BC858L-x-AE3-R  
1
E
E
E
2
B
B
B
3
C
C
C
BC856-x-AE3-R  
BC857-x-AE3-R  
BC858-x-AE3-R  
SOT-23  
SOT-23  
SOT-23  
Tape Reel  
Tape Reel  
Tape Reel  
Note: x: Rank  
„
MARKING  
BC856  
BC857  
BC858  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R206-028,B  
BC856/BC857/BC858  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
RATINGS  
-80  
UNIT  
V
BC856  
BC857  
BC858  
BC856  
BC857  
BC858  
Collector-Base Voltage  
Collector-Emitter Voltage  
VCBO  
-50  
V
-30  
V
-65  
V
VCEO  
-45  
V
-30  
V
Emitter-Base Voltage  
Collector Dissipation  
Collector Current (DC)  
Junction Temperature  
Storage Temperature  
VEBO  
PD  
-5  
V
310  
mW  
mA  
°C  
°C  
IC  
-100  
+150  
-40 ~ +150  
TJ  
TSTG  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=-30V, IE=0  
MIN TYP MAX UNIT  
Collector Cut-Off Current  
DC Current Gain  
-15  
nA  
hFE  
VCE=-5V, IC=-2mA  
110  
800  
-90 -300 mV  
-250 -650 mV  
IC=-10mA,IB=-0.5mA  
Collector-Emitter Saturation Voltage VCE(SAT)  
IC=-100mA,IB=-5mA  
-700  
-900  
mV  
mV  
IC=-10mA,IB=-0.5mA  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
VBE(SAT)  
IC=-100mA,IB=-5mA  
VCE=-5V,IC=-2mA  
-600 -660 -750 mV  
-800 mV  
VBE(ON)  
VCE=-5V,IC=-10mA  
Current Gain Bandwidth Product  
Output Capacitance  
Noise Figure  
fT  
VCE=-5V,IC=-10mA, f=100MHz  
VCB=-10V,IE=0,f=1MHz  
VCE=-5V, IC=-200μA, f=1KHz, RG=2KΩ  
150  
MHz  
pF  
Cob  
NF  
6
2
10  
dB  
„
CLASSIFICATION OF hFE  
RANK  
A
B
C
RANGE  
110-220  
200-450  
420-800  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-028,B  
www.unisonic.com.tw  
BC856/BC857/BC858  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-028,B  
www.unisonic.com.tw  
BC856/BC857/BC858  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-028,B  
www.unisonic.com.tw  

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