BC857L-C-AE3-R [UTC]
SWITCHING AND AMPLIFIER APPLICATIONS; 开关和放大器应用
| 型号： | BC857L-C-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | SWITCHING AND AMPLIFIER APPLICATIONS |
| 文件： | 总4页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BC856/BC857/BC858
PNP SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits
*Complement to BC846/BC847/BC848
*Pb-free plating product number:
BC856L/BC857L/BC858L
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
BC856L-x-AE3-R
BC857L-x-AE3-R
BC858L-x-AE3-R
1
E
E
E
2
B
B
B
3
C
C
C
BC856-x-AE3-R
BC857-x-AE3-R
BC858-x-AE3-R
SOT-23
SOT-23
SOT-23
Tape Reel
Tape Reel
Tape Reel
Note: x: Rank
MARKING
BC856
BC857
BC858
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-028,B
BC856/BC857/BC858
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
-80
UNIT
V
BC856
BC857
BC858
BC856
BC857
BC858
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
-50
V
-30
V
-65
V
VCEO
-45
V
-30
V
Emitter-Base Voltage
Collector Dissipation
Collector Current (DC)
Junction Temperature
Storage Temperature
VEBO
PD
-5
V
310
mW
mA
°C
°C
IC
-100
+150
-40 ~ +150
TJ
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=-30V, IE=0
MIN TYP MAX UNIT
Collector Cut-Off Current
DC Current Gain
-15
nA
hFE
VCE=-5V, IC=-2mA
110
800
-90 -300 mV
-250 -650 mV
IC=-10mA,IB=-0.5mA
Collector-Emitter Saturation Voltage VCE(SAT)
IC=-100mA,IB=-5mA
-700
-900
mV
mV
IC=-10mA,IB=-0.5mA
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
VBE(SAT)
IC=-100mA,IB=-5mA
VCE=-5V,IC=-2mA
-600 -660 -750 mV
-800 mV
VBE(ON)
VCE=-5V,IC=-10mA
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
fT
VCE=-5V,IC=-10mA, f=100MHz
VCB=-10V,IE=0,f=1MHz
VCE=-5V, IC=-200μA, f=1KHz, RG=2KΩ
150
MHz
pF
Cob
NF
6
2
10
dB
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
110-220
200-450
420-800
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-028,B
www.unisonic.com.tw
BC856/BC857/BC858
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-028,B
www.unisonic.com.tw
BC856/BC857/BC858
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-028,B
www.unisonic.com.tw
相关型号：
BC857R
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC857R-TAPE-13
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC857R-TAPE-7
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC857S
PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
INFINEON
©2020 ICPDF网 联系我们和版权申明