BCP68L-25-AA3-R [UTC]

NPN MEDIUM POWER TRANSISTOR; NPN型中功率晶体管


型号：	BCP68L-25-AA3-R
厂家：	Unisonic Technologies
描述：	NPN MEDIUM POWER TRANSISTOR NPN型中功率晶体管晶体晶体管
文件：	总3页 (文件大小：149K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

BCP68

NPN SILICON TRANSISTOR

NPN MEDIUM POWER

TRANSISTOR

FEATURES

* High current (max. 1 A)

* Low voltage (max. 20 V).

* Complementary to UTC BCP69

SOT-223

APPLICATIONS

* General purpose switching and amplification under high current

conditions.

ORDERING INFORMATION

Ordering Number

Lead Free

BCP68L-xx-AA3-R

Pin Assignment

Package

SOT-223

Packing

Halogen Free

BCP68G-xx-AA3-R

Tape Reel

www.unisonic.com.tw

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QW-R207-008,E

BCP68

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T_A=25°C , unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage (Open Emitter)

Collector-Emitter Voltage (Open Base)

Emitter-Base Voltage (Open Collector)

Collector Current

Peak

I_CM

Peak Base Current

I_BM

200

℃

Total Power Dissipation (T_A≤ 25℃)

Junction Temperature

P_D

1.35

T_J

150

Operating Temperature

Storage Temperature

T_OPR

T_STG

-45 ~ +150

-65 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction To Ambient

θ_JA

℃/W

ELECTRICAL CHARACTERISTICS (T_J= 25℃, unless otherwise specified.)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

500 mV

Collector-Emitter Saturation Voltage

V_CE(SAT)I_C= 1A, I_B=100mA

I_C= 5mA, V_CE= 10V

V_BE

620

Base-Emitter Voltage

I_C= 1A, V_CE= 1V

I_E= 0, V_CB= 25V

I_CBO

100

µA

Collector Cut-off Current

Emitter Cut-off Current

I_E= 0, V_CB= 25V, T_J= 150℃

I_EBO

h_FE

I_C= 0, V_EB= 5V

100

I_C= 5mA, V_CE= 10V

DC Current Gain

I_C= 500mA, V_CE= 1V

375

I_C= 1A, V_CE= 1V

Collector Capacitance

Transition Frequency

C_C

f_T

I_E= i_e= 0, V_CB= 5V, f = 1MHz

I_C= -10mA, V_CE= -5V, f = 100MHz

MHz

DC Current Gain Ratio of the

Complementary Pairs

h_FE1

h_FE2

|I_C| = 0.5A, |V_CE| = 1V

1.6

CLASSIFICATION OF h_FE

RANK

160~375

RANGE

100~250

UNISONIC TECHNOLOGIES CO., LTD

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QW-R207-008,E

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BCP68

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTIC

DC Current Gain (Typical Values)

300

250

200

150

100

V_CE= 1V

-10^-1

10⁴

10²

10³

I_C(mA)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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