BCP69-16-AA3-E-R [UTC]

NPN GENERAL PURPOSE AMPLIFIER; NPN通用放大器
BCP69-16-AA3-E-R
型号: BCP69-16-AA3-E-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN GENERAL PURPOSE AMPLIFIER
NPN通用放大器

放大器
文件: 总4页 (文件大小:80K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
BC817  
NPN EPITAXIAL SILICON TRANSISTOR  
NPN GENERAL PURPOSE  
AMPLIFIER  
3
Description  
The UTC BC817 is designed for general purpose medium power  
amplifiers and switches requiring collector currents to 1.2A.  
1
2
SOT-23  
*Pb-free plating product number:BC817L  
PIN CONFIGURATION  
PIN NO.  
PIN NAME  
EMITTER  
1
2
3
BASE  
COLLECTOR  
ORDERING INFORMATION  
Order Number  
Package  
Packing  
Normal  
Lead Free Plating  
BC817L-16-AE3-R  
BC817L-25-AE3-R  
BC817L-40-AE3-R  
BC817-16-AE3-R  
BC817-25-AE3-R  
BC817-40-AE3-R  
SOT-23 Tape & Reel  
SOT-23 Tape & Reel  
SOT-23 Tape & Reel  
MARKING  
BC817-16  
BC817-25  
BC817-40  
6A  
6B  
6C  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., LTD  
1
QW-R206-025.B  
BC817  
NPN EPITAXIAL SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING(Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCEO  
VCES  
VEBO  
IC  
RATINGS  
UNIT  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
45  
50  
V
V
5.0  
V
Collector Current -Continuous  
Power Dissipation  
Derate above 25°C  
Junction Temperature  
Storage Temperature  
1.5  
A
350  
2.8  
mW  
mW/°C  
PD  
TJ  
150  
TSTG  
-40 ~ +150  
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. The device is guaranteed to meet performance specification within 0~+70operating temperature range  
and assured by design from –20~+85.  
THERMAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
CHARACTERISTIC  
SYMBOL  
RATING (Note)  
350  
UNIT  
Thermal Resistance, Junction to Ambient  
θJA  
°C/W  
Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
V(BR)CEO IC=10mA, IB=0  
V(BR)CES IC=100µA,IE=0  
V(BR)EBO IE=10µA, Ic=0  
45  
50  
5
V
V
V
V
CB=20V  
100 nA  
Collector-Cutoff Current  
ON CHARACTERISTICS  
DC Current Gain  
ICBO  
VCB=20V,Ta=150°C  
5
µA  
hFE1  
*
Ic=100mA,VCE=1.0V  
Ic=500mA, VCE=1.0V  
See Classification  
hFE2  
40  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
VCE(SAT) Ic=500mA,IB=50Ma  
VBE(ON) Ic=500mA, VCE=1.0V  
0.7  
1.2  
V
V
CLASSIFICATION OF hFE1*  
RANK  
BC817-16  
100-250  
BC817-25  
160-400  
BC817-40  
250-600  
RANGE  
UNISONIC TECHNOLOGIES CO., LTD  
2
www.unisonic.com.tw  
QW-R206-025.B  
BC817  
NPN EPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Typical Pulsed Current Gain vs Collector Current  
Collector-Emitter Saturation Voltage vs Collector Current  
500  
0.6  
ß = 10  
VCE = 5V  
400  
0.5  
0.4  
0.3  
0.2  
125  
25℃  
125℃  
25℃  
300  
200  
100  
0
-40℃  
0.1  
0
-40℃  
0.001  
0.01  
0.1  
1 2  
0.01  
0.1  
1
3
Collector Current, IC (A)  
Collector Current, IC (A)  
Base-Emitter Saturation Voltage vs Collector Current  
Base-Emitter On Voltage vs Collector Current  
1
1.2  
1
ß = 10  
-40  
-40℃  
0.8  
25℃  
0.8  
0.6  
0.4  
0.2  
0.6  
150℃  
25℃  
125℃  
0.4  
0.2  
VCC = 5V  
1
1
10  
100  
1000  
0.001  
0.01  
0.1  
Collector Current, IC (mA)  
Collector Current, IC (A)  
Collector-Cutoff Current vs Ambient Temperature  
100  
Collector-Base Capacitance vs Collector-Base Voltage  
40  
30  
20  
10  
0
VCB = 40V  
10  
1
0.1  
25  
50  
75  
100  
125  
150  
0
4
8
12 16 20 24 28  
Collector-Base Voltage, VCB (V)  
Ambient Temperature, TA ()  
UNISONIC TECHNOLOGIES CO., LTD  
3
www.unisonic.com.tw  
QW-R206-025.B  
BC817  
NPN EPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS(cont.)  
350  
300  
500  
VCE = 10V  
400  
300  
200  
100  
0
250  
SOT-23  
200  
150  
100  
50  
0
1
10  
Collector Current, IC(mA)  
Gain Bandwidth Product vs Collector Current  
100  
1000  
0
25 50  
75  
100 125 150  
Temperature ()  
Power Dissipation vs Ambient Temperature  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4
www.unisonic.com.tw  
QW-R206-025.B  

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