BCX70L [UTC]

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3;
BCX70L
型号: BCX70L
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3

光电二极管 晶体管
文件: 总2页 (文件大小:113K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UTC BCX70  
NPN EPITAXIAL SILICON TRANSISTOR  
GENERAL PURPOSE TRANSISTOR  
MARKING  
2
1
CG  
3
SOT-23  
1: Emitter  
2: Base  
3: Collector  
*Pb-free plating product number: BCX70L  
ABSOLUTE MAXIMUM RATINGS  
(Ta = 25unless otherwise noted)  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
V
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
45  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Power Dissipation  
Storage Temperature  
45  
5
V
V
mA  
mW  
200  
PC  
TSTG  
350  
-40 ~ +150  
ELECTRICAL CHARACTERISTICS  
(Ta = 25unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
45  
5
TYP MAX  
UNIT  
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
BVCEO  
BVEBO  
ICES  
IC=2.0mA, IB=0  
IE=1.0µF, IC=0  
V
VCE=32V, VBE=0  
VEB=4V, IC=0  
VCE=5V, IC=10µA  
VCE=5V, IC=2.0mA  
VCE=1V, IC=50mA  
IC=10mA, IB=0.25mA  
IC=50mA, IB=1.25mA  
IC=10mA, IB=0.25mA  
IC=50mA, IB=1.25mA  
IC=2.0mA, VCE=5V  
20  
20  
nA  
nA  
Emitter Cut-off Current  
IEBO  
100  
380  
100  
DC Current Gain  
hFE  
630  
0.35  
0.55  
0.85  
1.05  
0.75  
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE (sat)  
VBE (sat)  
VBE (on)  
fT  
Cob  
0.6  
0.7  
0.55  
125  
V
V
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
IC=10mA, VCE=5V, f=100MHz  
VCB=10V, IE=0, f=1MHz  
VCE=5V, IC=0.2mA, RS=2K  
f=1KHz  
MHz  
4.5  
6
PF  
Noise Figure  
Turn On Time  
Turn Off Time  
NF  
tON  
dB  
ns  
ns  
IC=10mA, IB1=1.0mA  
150  
800  
V
BB=3.6V, IB2=1.0mA, R1=R2=5KΩ  
tOFF  
RL=990Ω  
UTC UNISONIC TECHNOLOGIES CO., LTD.  
1
www.unisonic.com.tw  
QW-R206-080,A  
UTC BCX70  
NPN EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UTC UNISONIC TECHNOLOGIES CO., LTD.  
2
www.unisonic.com.tw  
QW-R206-080,A  

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