BD136-6 [UTC]
Transistor;
| 型号： | BD136-6 |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC BD136/138/140
PNPEPITAXIALSILICONTRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC BD136/BD138/BD140 are silicon epitaxial
planer PNP transistor ,designed for use as audio amplifiers
and drivers utilizing complementary or quasi complementary
circuits.
The complementary NPN types are the BD135/BD137/
BD139.
1
TO-126
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
BD136
BD138
BD140
-45
-60
-80
VCBO
V
Collector-Emitter Voltage
BD136
BD138
BD140
-45
-60
-80
VCEO
V
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
VEBO
Ic
IcM
IB
-5
-1.5
-3
-0.5
12.5
1.25
-65 ~ 150
150
V
V
A
A
Total Dissipation
(Tc≦25°C)
(Ta≦25°C)
W
W
°C
°C
Ptot
Storage Temperature
Operating Junction Temperature
Tstg
Tj
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX
UNIT
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
θjc
10
100
°C/W
°C/W
θjA
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-013,B
UTC BD136/138/140
PNPEPITAXIALSILICONTRANSISTOR
ELECTRICAL CHARACTERISTICS(Tc=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage VCEO(sus)* IC =-30 mA, IB=0
BD136
BD138
BD140
-45
-60
V
-80
Collector Cut-off Current
ICBO
VCB =-30 V, IE=0
VCB =-30 V, IE=0, Tc = 125°C
-0.1
-10
µA
Emitter Cut- off Current
DC Current Gain
IEBO
hFE1
hFE2
hFE3
VEB = -5 V, IC=0
-10
µA
VCE=-2V, IC =-5 mA,
VCE=-2V, IC =-0.5A ,
VCE=-2V, IC =-150 mA,
25
25
40
250
-0.5
-1
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
* Pulsed: Pulse duration ≦ 300 µs, duty cycle 1.5 %
VCE(sat)* IC =-0.5 A, IB = -0.05 A
V
V
VBE IC =-0.5 A, VCE =-2 V
*
CLASSIFICATION OF hFE3
RANK
-6
40~100
-10
63~160
-16
100~250
RANGE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-013,B
相关型号：
BD136-6-BP
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
BD13616S
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 2000/BULK
FAIRCHILD
BD13616STU
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明