BD138G-16-T160-K [UTC]

PNP SILICON TRANSISTOR; PNP硅晶体管


型号：	BD138G-16-T160-K
厂家：	Unisonic Technologies
描述：	PNP SILICON TRANSISTOR PNP硅晶体管晶体晶体管
文件：	总3页 (文件大小：132K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

BD136-138-140

PNP EPITAXIAL SILICON TRANSISTOR

PNP SILICON TRANSISTOR

DESCRIPTION

The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP

transistor, designed for use as audio amplifiers and drivers utilizing

complementary or quasi complementary circuits.

TO-251

The complementary NPN types are the BD135/BD137/ BD139.

TO-126

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

BD136L-x-T60-K

BD138L-x-T60-K

BD140L-x-T60-K

BD136L-x-TM3-T

BD138L-x-TM3-T

BD140L-x-TM3-T

BD136G-x-T60-K

BD138G-x-T60-K

BD140G-x-T60-K

BD136G-x-TM3-T

BD138G-x-TM3-T

BD140G-x-TM3-T

TO-126

TO-251

Bulk

Tube

Note: Pin Assignment: E: Emitter C: Collector B: Base

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BD136-138-140

PNP EPITAXIAL SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING

PARAMETER

BD136

SYMBOL

V_CBO

RATINGS

-45

UNIT

Collector-Base Voltage

BD138

BD140

BD136

BD138

BD140

-60

-80

-45

Collector-Emitter Voltage

V_CEO

-60

-80

Emitter-Base Voltage

Collector Current

Collector Peak Current

Base Current

V_EBO

I_C

I_CM

I_B

-5

-1.5

-3

-0.5

12.5

TO-126

TO-251

Power Dissipation T_C≦25℃

P_D

Junction Temperature

Storage Temperature

T_J

150

℃

T_STG

-40 ~ +150

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range

and assured by design from –20℃~85℃.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-126

TO-251

TO-126

TO-251

100

℃/W

Junction to Ambient

Junction to Case

θ_JA

℃/W

θ_JC

8.3

ELECTRICAL CHARACTERISTICS (T_C=25℃,unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

-45

BD136

BD138

BD140

Collector-Emitter

Sustaining Voltage

V_CEO(SUS)I_C=-30mA, I_B=0 (Note)

-60

-80

V_CB=-30 V, I_E=0

I_CBO

-0.1

-10

Collector Cut-off Current

Emitter Cut- off Current

μA

V_CB=-30 V, I_E=0, T_C= 125°C

I_EBO

h_FE1

h_FE2

h_FE3

V_EB= -5 V, I_C=0

V_CE=-2V, I_C=-5mA,

V_CE=-2V, I_C=-0.5A

V_CE=-2V, I_C=-150mA

DC Current Gain

250

-0.5

-1

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

V_CE(SAT)I_C=-0.5A, I_B= -0.05A (Note)

V_BEI_C=-0.5A, V_CE=-2 V (Note)

Note: Pulsed: Pulse duration ≦ 300μs, duty cycle 1.5 %

CLASSIFICATION OF h_FE3

RANK

100~250

RANGE

40~100

63~160

UNISONIC TECHNOLOGIES CO., LTD

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BD136-138-140

PNP EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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