BF422G-AE3-R [UTC]
Small Signal Bipolar Transistor,;
| 型号： | BF422G-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总4页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BF422
NPNEPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
3
FEATURES
2
* Collector-Emitter Voltage: VCEO=250V.
* Complementary to UTC BF423.
1
SOT-23
(JEDEC TO-236)
1
TO-92
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
E
E
2
E
C
C
3
C
B
B
BF422L-AE3-R
BF422L-T92-B
BF422L-T92-K
BF422G-AE3-R
BF422G-T92-B
SOT-23
TO-92
TO-92
Tape Reel
Tape Box
Bulk
BF422G-T92-K
Note: Pin Assignment: B: Base
C: Collector E: Emitter
BF422G-AE3-R
(1) R: Tape Reel, B: Tape Box, K: Bulk
(2) AE3: SOT-23, T92: TO-92
(1)Packing Type
(2)Package Type
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
SOT-23
TO-92
UTC
BF422
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
422
Date Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., LTD
1 of 4
QW-R201-063.D
BF422
NPNEPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
250
250
5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-base voltage
Collector current (DC)
collector current (Peak)
base current
V
V
50
mA
mA
mA
mW
mW
ICP
100
50
IB
SOT-23
TO-92
350
625
Collector Power dissipation
PC
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-40 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature
range and assured by design from –20°C ~85°C.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB= 200V, IE=0
MIN TYP MAX UNIT
Collector Cut-Off Current
Emitter Cut-Off Current
DC current gain
10
50
nA
nA
IEBO
VEB= 5V, IC=0
hFE
VCE=20V, IC=25mA
50
60
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) IC= 30mA, IB= 5mA
0.6
1.6
V
V
VBE
fT
VCE=-20V, IC=25mA
VCE= 10V , IC= 10mA
VCB= 30V, IE=0, f=1MHz
0.75
Transition frequency
MHz
pF
Reverse Transfer Capacitance
Cre
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BF422
NPNEPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Low Voltage Region, IC-VCE
hFE-IC
500
60
50
COMMON
EMITTER
TA=25°C
COMMON
300
1.2
1.6
0.8
EMITTER
VCE=20V
TA=25°C
100
0.6
0.4
0.3
40
50
30
30
20
10
0.2
0.15
5
0.1
IB=0.05mA
0
10
10
0
0
0.3
0
4 12 16 20 24 28
Collector-Emitter Voltage, VCE (V)
8
1
3
Collector Current, IC (mA)
10
30 100
hFE-IC
VCE(sat)-IC
500
300
2
COMMON
EMITTER
VCE=10V
COMMON
EMITTER
TA=25°C
TA=100°C
TA=25°C
1
0.5
0.3
100
50
30
IC/IB=10
TA=-25°C
0.1
0.05
0.03
5
2
10
0
0.01
-0.3
1
3
10
30
100
0.3
1
3
10
30 100
Collector Current, IC (mA)
Collector Current, IC (mA)
IC-VBE
VCE(sat)-IC
50
40
2
COMMON
EMITTER
TA=25°C
COMMON
EMITTER
VCE=10V
1
0.5
0.3
C
°
0
0
C
°
1
C
5
=
-30
-20
°
A
2
5
TA=100°C
T
=
2
A
-
0.1
T
=
A
T
0.05
0.03
TA=-25°C
TA=25°C
-10
0
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
Bqse-Emitter Voltage, VBE (V)
-0.3
1
3
10
30 100
Collector Current, IC (mA)
UNISONICTECHNOLOGIESCO.,LTD
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BF422
NPNEPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)
fT-IC
Cob,Cre-VCB
IE=0
500
10
8
COMMON
300
f=1MHz
TA=25°C
EMITTER
VCE=20V
TA=25°C
100
50
6
4
Cob
Cre
40 80 120 160 200 240 280
30
VCE=10V
2
10
0
0.3
1
3
10
30
0
Collector-Base Voltage, VCB (V)
Collector Current, IC (mA)
PC -TA
Safe Operating Area
1000
800
600
400
200
200
IC MAX.(PULSED)*
1
m
100
s
1
0
0
50
30
m
s
D
C
1
O
0
P
m
E
R
s
A
T
10
5
I
O
N
*SINGLE NONREPETITIVE
3
PULSE TA=25°C CURVES MUST
BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
1
0
0.5
0
40
80
120 160 200
100
Collector Emitter Voltage, VCE (V)
10
30
300
3
Ambient Temperature, TA(°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONICTECHNOLOGIESCO.,LTD
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