BSS138G-AL3-R [UTC]

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE; N沟道逻辑电平增强模式


型号：	BSS138G-AL3-R
厂家：	Unisonic Technologies
描述：	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE N沟道逻辑电平增强模式
文件：	总3页 (文件大小：156K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

BSS138

Preliminary

Power MOSFET

N-CHANNEL LOGIC LEVEL

ENHANCEMENT MODE

DESCRIPTION

This device employs advanced MOSFET technology and

features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the

overall efficiency of DC/DC converters and allows operation to higher

switching frequencies.

FEATURES

* R_DS(ON)=0.7Ω @ V_GS=10V

* R_DS(ON)=1Ω @ V_GS=4.5V

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

BSS138L-AE2-R

BSS138L-AL3-R

BSS138G-AE2-R

BSS138G-AL3-R

SOT-23-3

SOT-323

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

MARKING

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BSS138

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

0.22

Continuous Drain Current

Power Dissipation

I_D

Pulse

0.88

SOT-23-3

SOT-323

0.36

P_D

0.15

Junction Temperature

Storage Temperature

T_J

+150

℃

T_STG

-55 ~ +150

Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

350

UNIT

SOT-23-3

SOT-323

Junction to Ambient

θ_JA

℃/W

833

ELECTRICAL CHARACTERISTICS (T_A=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V, I_D=250µA

Breakdown Voltage Temperature Coefficient ΔBV_DSS/ΔT_JI_D=250μA,Referenced to 25°C

mV/℃

V_DS=50V, V_GS=0V

0.5

0.1

Zero Gate Voltage Drain Current

I_DSS

I_GSS

µA

V_DS=30V, V_GS=0V

V_DS=0V, V_GS=±20V

Gate–Body Leakage, Forward

ON CHARACTERISTICS (Note)

Gate-Threshold Voltage

±100 nA

V_GS(TH)

V_DS=V_GS, I_D=1m A

0.8 1.3 1.5

-2

Gate Threshold Voltage Temperature

Coefficient

ΔV_GS(TH)/ΔT_JI_D=1mA, Referenced to 25°C

mV/°C

V_GS=10 V, I_D=0.22A

R_DS(ON)

0.7 3.5

1.0 6.0

0.2

Static Drain–Source On–Resistance

Ω

V_GS=4.5 V, I_D=0.22A

On-State Drain Current

Forward Transconductance

DYNAMIC PARAMETERS

Input Capacitance

I_D(ON)

g_FS

V_GS=10 V, V_DS=5V

V_DS=10V, I_D=0.22A

0.12 0.5

C_ISS

C_OSS

C_RSS

Output Capacitance

_DS=25V, V_GS=0V, f=1MHz

_DS=25V, V_GS=10V, I_D=0.22A

Reverse Transfer Capacitance

SWITCHING PARAMETERS (Note)

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

1.7 2.4

0.1

Gate Source Charge

Gate Drain Charge

0.4

Turn-ON Delay Time

2.5

Turn-ON Rise Time

V_DD=30V, I_D=0.29A,V_GS=10V,

R_G=6Ω,

Turn-OFF Delay Time

Turn-OFF Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Max. Diode Forward Current

V_SD

I_S

V_GS= 0V, I_S=0.44A (Note)

0.8 1.4

0.22

Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-271.e

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BSS138

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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