BSS84ZL-AE2-R [UTC]

0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 0.13A ， 50V P沟道增强型场效应晶体管


型号：	BSS84ZL-AE2-R
厂家：	Unisonic Technologies
描述：	0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 0.13A ， 50V P沟道增强型场效应晶体管晶体晶体管场效应晶体管
文件：	总3页 (文件大小：161K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

BSS84Z

Preliminary

Power MOSFET

0.13A, 50V P-CHANNEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR

DESCRIPTION

These P-Channel enhancement mode field vertical D-MOS

transistors are in a SOT-23-3 SMD package, and in most

applications they require up to 0.13A DC and can deliver current up

to 0.52A.

This product is particularly suited to low voltage applications

requiring a low current high side switch.

FEATURES

* R_DS(ON)=10Ω @ V_GS=-5V

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

BSS84ZG-AE2-R

BSS84ZL-AE2-R

SOT-23-3

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

MARKING

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Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

-50

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

-0.13

Continuous Drain Current

I_D

Pulse

-0.52

Power Dissipation

P_D

T_J

0.36

℃

Junction Temperature

Storage Temperature

+150

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

350

UNIT

Junction to Ambient

θ_JA

℃/W

ELECTRICAL CHARACTERISTICS (T_A=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

ON CHARACTERISTICS (Note)

Gate-Threshold Voltage

BV_DSS

I_DSS

V_GS=0V, I_D=-250µA

-50

V_DS=-50V, V_GS=0V

V_DS=0V, V_GS=±20V

-15

µA

I_GSS

±10

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=-1m A

-0.8 -1.7 -2

1.2 10

1.9 17

-0.6

V_GS=-5V, I_D=-0.1A

Static Drain–Source On–Resistance

Ω

V_GS=-55 V, I_D=-0.1A, T_J=125℃

V_GS=-10 V, V_DS=-5V

V_DS=-25V, I_D=-0.1A

On-State Drain Current

Forward Transconductance

DYNAMIC PARAMETERS

Input Capacitance

I_D(ON)

g_FS

0.05 0.6

C_ISS

C_OSS

C_RSS

Output Capacitance

V_DS=-25V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS (Note)

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

0.9 1.3

0.2

V_DS=-30V, V_GS=-10V,

I_D=-0.1A

Gate Source Charge

Gate Drain Charge

0.3

Turn-ON Delay Time

2.5

6.3 13

10 20

Turn-ON Rise Time

V_DD=-30V, I_D=-0.1A,V_GS=-10V,

R_G=6Ω,

Turn-OFF Delay Time

Turn-OFF Fall-Time

t_D(OFF)

t_F

4.8 9.6

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Max. Diode Forward Current

V_SD

I_S

V_GS= 0V, I_S=-0.26A (Note)

-0.8 -1.2

-0.13

Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%

UNISONIC TECHNOLOGIES CO., LTD

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BSS84Z

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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