BT136E [UTC]
TRIACS; 双向可控硅
| 型号： | BT136E |
| 厂家： | 
Unisonic Technologies |
| 描述： | TRIACS |
| 文件： | 总5页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC BT136E
TRIAC
TRIACS
DESCRIPTION
Passivated triacs in a plastic envelope, intended for use in
applications requiring high bidirectional transient and blocking
voltage capability and high thermal cycling performance. Typical
applications include motor control, industrial and domestic
lighting, heating and static switching.
1
SYMBOL
MT2
TO-220
G
1:MT1
2:MT2
3:GATE
MT1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
600*
UNIT
V
Repetitive peak off-state voltages
BT136-600
BT136-800
VDRM
800
RMS on-state current
full sine wave; Tmb ≤107 °C
IT(RMS)
4
A
Non-repetitive peak on-state current
(Full sine wave; Tj = 25 °C prior to surge)
ITSM
t = 20ms
t = 16.7 ms
25
27
A
I2t for fusing
I2t
A2s
t = 10 ms
3.1
Repetitive rate of rise of on-state current after triggering
ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs
T2+G+
T2+G-
T2-G-
T2-G+
50
50
50
10
dIT /dt
A/μs
Peak gate voltage
Peak gate current
Peak gate power
Average gate power (over any 20 ms period)
Storage temperature
VGM
IGM
PGM
PG(AV)
Tstg
5
2
5
V
A
W
W
℃
℃
0.5
-40 ~ 150
125
Operating junction temperature
Tj
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch
to the on-state. The rate of rise of current should not exceed 3A/µs.
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-005,A
UTC BT136E
TRIAC
THERMAL RESISTANCES
PARAMETER
Thermal resistance Junction to mounting base
Full cycle
SYMBOL
MIN
TYP
60
MAX
UNIT
Rth j-mb
3.0
3.7
K/W
K/W
Half cycle
Thermal resistance Junction to ambient
(In free air)
Rth j-a
K/W
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated)
PARAMETER SYMBOL CONDITIONS
MIN TYP MAX UNIT
STATIC CHARACTERISTICS
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+G+
T2+G-
T2-G-
T2-G+
2.5
4.0
5.0
11
10
10
10
25
mA
mA
IGT
Latching current
VD = 12 V; IGT = 0.1 A
T2+G+
T2+G-
T2-G-
T2-G+
3.0
10
2.5
4.0
15
20
15
20
IL
Holding current
On-state voltage
Gate trigger voltage
IH
VT
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400V ; IT = 0.1 A; Tj =125°C
VD = VDRM(max) ; Tj = 125 °C
2.2
1.4
0.7
0.4
0.1
15
1.7
1.5
mA
V
V
V
mA
VGT
0.25
Off-state leakage current
ID
0.5
DYNAMIC CHARACTERISTICS
Critical rate of rise of Off-state
VDM = 67% VDRM(max) ; Tj =125°C;
exponential waveform; gate open
circuit
voltage
dVD /dt
50
2
V/µs
µs
Gate controlled turn-on time
ITM = 6 A; VD= VDRM(max) ; IG=0.1A;
dIG/dt=5A/µs
tgt
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-005,A
UTC BT136E
TRIAC
Tmb(max)/C
IT(RMS)/A
Ptot/W
8
101
104
107
110
5
4
3
2
1
0
7
107℃
α
α
=180
6
α
120
5
4
3
90
60
113
116
119
122
125
30
2
1
0
0
5
-50
50
Tmb/C
100
150
lT(RMS),
0
1
2
3
4
IT(RMS)/A
Fig.1. Maximum on-state dissipation,Ptot,versus
Fig.4. Maximum permissible rms current
versus mounting base temperature Tmb
rms
α
on-state current,IT(RMS)where =conduction angle.
ITSM/A
IT(RMS)/A
1000
12
ITSM
IT
10
time
T
8
6
4
Tj initial=25℃max
100
10
dIT/dt limit
T2-G+ quadrant
100us
2
0
10us
0.01
100ms
1ms
T/s
10ms
0.1
1
10
surge duration /S
Fig. 5.Maximum permissible repetitive rms on-state
current lT(RMS),versus surge duration,for sinusoidal
currents,f=50HZ;Tmb≦107℃
Fig.2.Maximum Permissible non-repetitive peak
,
on-state Current ITSM,versus pulse width tp for
sinusoidal currents,tp≦20ms
VGT(Tj)
VGT(25℃)
ITSM/A
30
25
20
15
10
1.6
1.4
1.2
ITSM
IT
time
T
Tj initial=25℃max
1
0.8
5
0
0.6
0.4
0
50
100
150
1000
0
10
100
-50
Number of cycles at 50Hz
Tj/℃
Fig.6. Normalised gate trigger voltage
Fig3.Maximum Permissible non-repetitive peak
on-state current ITSM,versus number of cycles,for
sinusoidal currents,f=50HZ.
temperature T.
VGT(Tj)/VGT(25℃),versus junction
j
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-005,A
UTC BT136E
TRIAC
IGT(Tj)
IGT(25℃)
IT/A
3
12
10
Tj=125℃
Tj=25℃
T2+G+
T2+G-
T2-G-
typ
max
2.5
Vo=1.27V
T2-G+
Rs=0.091Ohms
2
1.5
1
8
6
4
0.5
0
2
0
-50
0
50
Tj/℃
100
150
0
0.5
1
1.5
VT/V
2
2.5
3
Fig. 7.Normalised gate trigger Current
Fig.10.Typical and maximum on-state characteristic.
IGT(Tj)/IGT(25℃),versus junction temperature Tj.
IL(Tj)
Zth j-mb(K/W)
IL(25℃)
10
1
3
2.5
2
unidirectional
bidirectional
1.5
1
tp
PD
0.1
0.5
0
t
0.01
-50
0
50
100
150
10us
1ms
0.1ms
10ms
tp/s
0.1s
1s
10s
Tj/℃
Fig.11.Transient thermal impedance Zthj-mb,versus
pulse width tp.
Fig.8.Normalised latching Current IL(Tj)/IL(25℃),
versus junction temperature Tj
IH(Tj)
IH(25℃)
dVD/dt(V/us)
1000
3
2.5
2
1.5
1
10
1
0.5
0
0
50
Tj/C
100
150
-50
0
50
100
150
Tj/℃
Fig.12.Typical,critical rate of rise of off-satate
voltage,dVD/dt versus junction
temperature Tj
Fig. 9.Normalised holding current IH(Tj)/IH(25℃),
versus junction temperature Tj.
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-005,A
UTC BT136E
TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
5
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-005,A
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