BT151 [UTC]
BT151;
| 型号： | BT151 |
| 厂家： | 
Unisonic Technologies |
| 描述： | BT151 |
| 文件： | 总5页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC BT151
SCR
SCRs
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage
capability and high thermal cycling performance. Typical
applications include motor control, industrial and domestic
lighting, heating and static switching.
SYMBOL
1
A
K
TO-220
G
1: CATHODE
2: ANODE
3: GATE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Repetitive peak off-state voltages
BT151-500
SYMBOL
RATING
500*
650*
800
UNIT
V
VDRM , VRRM
BT151-650
BT151-800
Average on-state current
IT(AV)
7.5
12
A
A
(half sine wave; Tmb ≤109 °C)
RMS on-state current (all conduction angles)
Non-repetitive peak on-state current
(half sine wave; Tj = 25 °C prior to surge)
t = 10 ms
IT(RMS)
ITSM
A
100
110
50
t = 8.3 ms
I2t for fusing (t = 10 ms)
I2t
A2s
Repetitive rate of rise of on-state current after triggering
(ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/ms)
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power (over any 20 ms period)
Average gate power
Storage temperature
A/μs
dIT /dt
50
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
2
5
5
5
0.5
-40~150
125
A
V
V
W
W
℃
℃
Operating junction temperature
Tj
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15A/µs.
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-007,B
UTC BT151
SCR
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
60
MAX
1.3
UNIT
Thermal resistance Junction to mounting base
Rth j-mb
K/W
Thermal resistance Junction to ambient
In free air
Rth j-a
K/W
STATIC CHARACTERISTICS(Tj=25°C,unless otherwise stated)
PARAMETER
Gate trigger current
Latching current
SYMBOL
CONDITIONS
VD = 12 V; IT = 0.1 A
MIN
TYP MAX UNIT
IGT
IL
IH
2
15
40
20
1.75
1.5
mA
mA
mA
V
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 23 A
10
7
1.4
0.6
0.4
0.1
Holding current
On-state voltage
Gate trigger voltage
VT
VD = 12 V; IT = 0.1 A
VGT
V
VD = VDRM(max) ; IT = 0.1 A; Tj = 125 °C
VD = VDRM(max) ; VR = VRRM(max) ;
Tj = 125 °C
0.25
Off-state leakage current
0.5
mA
ID , IR
DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise stated)
PARAMETER
Critical rate of rise of
off-state voltage
SYMBOL
CONDITIONS
MIN
TYP
MAX UNIT
V/µs
VDM = 67% VDRM(max) ; Tj = 125 °C;
exponential waveform;
Gate open circuit
dVD /dt
50
200
130
1000
2
RGK = 100Ω
Gate controlled turn-on
time
Circuit commutated
Turn-off time
ITM = 40 A; VD = VDRM(max) ; IG = 0.1 A;
µs
µs
tgt
tq
dIG /dt = 5 A/µs
VD = 67% VDRM(max) ; Tj = 125 °C;
ITM = 20 A; VR = 25 V; dITM /dt = 30 A/μs;
dVD /dt = 50 V/μs; RGK = 100 Ω
70
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-007,B
UTC BT151
SCR
Ptot/W
ITSM/A
Tmb(max)/C
105.5
15
120
100
80
conduction form
ITSM
IT
angle
degrees
30
factor
a
a=1.57
1.9
4
T
time
2.2
60
2.8
2.2
1.9
1.57
112
10
90
Tj initial=25℃max
2.8
120
180
60
4
40
20
118.5
125
5
0
α
0
1
10
100
1000
0
2
3
4
5
6
7
8
1
Number of half cycles at 50Hz
IT(RMS)/A
Fig.1. Maximum on-state dissipation,Ptot,versus
Fig4.Maximum Permissible non-repetitive peak
average on-state current,IT(AV),where
on-state current ITSM,versus number of cycles,for
sinusoidal currents,f=50HZ.
a=form factor=IT(RMS)/IT(AV)
.
ITSM/A
IT(RMS)/A
1000
25
20
15
dIT/dt limit
100
10
10
ITSM
IT
5
0
time
Tj initial=25℃max
10us
100us
1ms
10ms
0.1
1
10
0.01
surge duration /S
T/s
Fig.2.Maximum Permissible non-repetitive peak
Fig. 5.Maximum permissible repetitive rms on-state
current lT(RMS),versus surge duration,for sinusoidal
currents,f=50HZ;Tmb ≦109℃
,
on-state Current ITSM,versus pulse width tp for
sinusoidal currents,tp≦10ms
VGT(Tj)
VGT(25℃)
IT(RMS)/A
15
1.6
109℃
1.4
1.2
10
1
0.8
5
0
0.6
0.4
0
50
Tj/℃
100
150
0
-50
-50
50
Tmb/C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/VGT(25℃),versus junction temperature Tj.
Fig.3. Maximum permissible rms current lT(RMS),
versus mounting base temperature Tmb
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-007,B
UTC BT151
SCR
IT/A
IGT(Tj)
IGT(25℃)
30
25
3
Tj=125℃
Tj=25℃
typ
2.5
2
20
15
max
1.5
1
10
5
0.5
0
0
0
2
-50
50
Tj/C
100
150
0
0.5
1
1.5
VT/V
Fig. 7.Normalised gate trigger Current
Fig.10.Typical and maximum on-state characteristic.
Zth j-mb(K/W)
IGT(Tj)/IGT(25℃),versus junction temperature Tj.
IL(Tj)
IL(25℃)
3
2.5
2
10
1
0.1
1.5
1
tp
PD
0.01
0.5
0
t
0.001
0
1ms 10ms
tp/s
0.1s
1s
10s
10us 0.1ms
-50
50
Tj/C
100
150
Fig.8.Normalised latching Current IL(Tj)/IL(25℃),
Fig.11.Transient thermal impedance Zthj-mb,
versus pulse width tp.
versus junction temperature Tj
IH(Tj)
IH(25℃)
dVD/dt(V/us)
3
10000
2.5
2
1000
100
10
RGK=100Ω
gate open circuit
1.5
1
.5
0
0
0
-50
50
Tj/C
100
150
50
100
150
Tj/C
Fig. 9.Normalised holding current IH(Tj)/IH(25℃),
Fig.12.Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
versus junction temperature Tj.
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-007,B
UTC BT151
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-007,B
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