BT169HG-T92-K [UTC]

SCRS; 可控硅


型号：	BT169HG-T92-K
厂家：	Unisonic Technologies
描述：	SCRS 可控硅栅极触发装置可控硅整流器
文件：	总6页 (文件大小：340K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

BT169

SCR

SCRS

DESCRIPTION

Passivated, sensitive gate thyristors in a plastic envelope,

intended for use in general purpose switching and phase control

applications. These devices are intended to be interfaced

directly to microcontrollers, logic integrated circuits and other

low power gate trigger circuits.

SYMBOL

Lead-free:

BT169xL

Halogen-free: BT169xG

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Normal

Lead Free

Halogen Free

BT169BG-T92-B

BT169BG-T92-K

BT169DG-T92-B

BT169DG-T92-K

BT169EG-T92-B

BT169EG-T92-K

BT169GP-T92-B

BT169GP-T92-K

BT169HG-T92-B

BT169HG-T92-K

BT169B-T92-B

BT169B-T92-K

BT169D-T92-B

BT169D-T92-K

BT169E-T92-B

BT169E-T92-K

BT169G-T92-B

BT169G -T92-K

BT169H-T92-B

BT169H -T92-K

BT169BL-T92-B

BT169BL-T92-K

BT169DL-T92-B

BT169DL-T92-K

BT169EL-T92-B

BT169EL-T92-K

BT169GL-T92-B

BT169GL-T92-K

BT169HL-T92-B

BT169HL-T92-K

TO-92

Tape Box

Bulk

Tape Box

Bulk

Tape Box

Bulk

Tape Box

Bulk

Tape Box

Bulk

Note: Pin Assignment: C:CATHODE G:GATE A:ANODE

www.unisonic.com.tw

1 of 6

QW-R301-015,C

BT169

SCR

QUICK REFERENCE DATA

BT169B BT169D BT169E BT169G BT169H

UNIT

MAX

PARAMETER

SYMBOL

MAX

200

0.5

0.8

MAX

400

0.5

0.8

MAX

500

0.5

0.8

MAX

600

0.5

0.8

MAX

800

0.5

0.8

Repetitive Peak Off-State Voltages

Average On-State Current

V_DRM, V_RRM

I_T(AV)

I_T(RMS)

I_TSM

RMS On-State Current

Non-Repetitive Peak On-State Current

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

BT169B

BT169D

BT169E

BT169G

BT169H

200

400

500

600

800

Repetitive Peak Off-State Voltages(Note 2)

V_DRM,V_RRM

Peak Gate Voltage

V_GM

V_RGM

I_GM

Peak Reverse Gate Voltage

Peak Gate Current

Average On-State Current

(Half Sine Wave, T_LEAD≦83°C)

RMS On-State Current (All Conduction Angles)

I_T(AV)

I_T(RMS)

I_TSM

0.5

0.8

Non-Repetitive Peak On-State Current

(Half Sine Wave, T_J=25°C Prior to Surge)

I²t For Fusing (t=10ms)

t=10ms

t=8.3ms

A²S

I²t

0.32

Repetitive Rate of Rise of On-State Current After

Triggering (I_TM=2A,I_G=10mA, dI_G/dt=100mA/μs)

Peak Gate Power

dI_T/dt

A/μs

P_GM

P_G(AV)

T_J

0.1

Average Gate Power (Over any 20 ms period)

Junction Temperature

+125

°C

Storage Temperature

T_STG

-40 ~ +150

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the

thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

150

UNIT

Thermal Resistance Junction to Ambient (typ.)

Note: pcb mounted, lead length=4mm

θ_JA

°C /W

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TSET CONDITIONS

MIN

TYP

MAX UNIT

STATIC CHARACTERISTICS

Gate Trigger Current

Latching Current

I_GT

I_L

V_D=12V, I_T=10 mA, gate open circuit

V_D=12V, I_GT=0.5mA, R_GK=1kΩ

V_D=12V,I_GT=0.5mA, R_GK=1kΩ

I_T=1A

μA

Holding Current

I_H

On-State Voltage

V_T

1.2

1.35

V_D=12V, I_T=10mA, gate open circuit

V_D=V_DRM(MAX), I_T=10mA, T_J=125°C,

gate open circuit

0.5

0.3

Gate Trigger Voltage

V_GT

0.8

0.1

0.2

V_D=V_DRM(MAX), V_R=V_RRM(MA\X)

Off-State Leakage Current

I_D,I_R

0.05

T_J=125°C, R_GK=1kΩ

UNISONIC TECHNOLOGIES CO., LTD

2 of 6

QW-R301-015,C

www.unisonic.com.tw

BT169

SCR

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TSET CONDITIONS

MIN

500

TYP MAX UNIT

DYNAMIC CHARACTERISTICS

Ciritical Rate of Rise of Off-State

Voltage

_DM=67% V_DRM(MAX), T_J=125°C,

exponential waveform, R_GK=1kΩ

_TM=2A,V_D=V_DRM(MAX), I_G=10mA,

dV_D/dt

t_gt

800

V/μs

μs

Gate Controlled Turn-On Time

dIG/dt=0.1A/μs

V_D=67% V_DRM(MAX), T_J=125°C,

Circuit Commutated Turn-Off

Time

_TM=1.6A,V_R=35V, d_ITM/dt=30A/μs,

100

μs

V_D/dt=2V/μs, R_GK=1kΩ

UNISONIC TECHNOLOGIES CO., LTD

3 of 6

www.unisonic.com.tw

QW-R301-015,C

BT169

SCR

TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

4 of 6

www.unisonic.com.tw

QW-R301-015,C

BT169

SCR

TYPICAL CHARACTERISTICS(Cont.)

Normalised Gate Trigger Current vs. Junction

Temperature

Typical And Maximum On-State Characteristic

3.0

2.5

2.0

T_J=125°C - - -

T_J= 25°C

V_OUT=1.067V

Rs=0.187

typ

max

1.5

1.0

0.5

-50

100

150

0.5

1.0

1.5

V_T(V)

2.0

2.5

Junction Temperature, T_J(°C)

UNISONIC TECHNOLOGIES CO., LTD

5 of 6

www.unisonic.com.tw

QW-R301-015,C

BT169

SCR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

6 of 6

QW-R301-015,C

www.unisonic.com.tw

相关型号：