BT169 [UTC]
SCR; SCR
| 型号： | BT169 |
| 厂家： | 
Unisonic Technologies |
| 描述： | SCR |
| 文件： | 总4页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC BT169
SCR
DESCRIPTION
The UTC BT169 is glass passivated, sensitive gate
thyristors in a plastic envelope, intended for use in
general purpose switching and phase control
applications. These devices are intended to be
interfaced directly to microcontrollers, logic integrated
circuits and other low power gate trigger circuits.
1
TO-92
1:CATHODE 2:GATE 3:ANODE
QUICK REFERENCE DATA
PARAMETER
Repetitive peak off-state voltages
Average on-state current
SYMBOL
VDRM, VRRM
IT(AV)
MAX(B)
200
0.5
MAX(D)
400
0.5
MAX(E)
500
0.5
MAX(G)
600
0.5
UNIT
V
A
A
A
RMS on-state current
IT(RMS)
0.8
0.8
0.8
0.8
Non-repetitive peak on-state current
ITSM
8
8
8
8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX UNIT
Repetitive peak off-state voltages :
VDRM,VRRM
B:200
D:400
E:500
G:600
0.5
V
Average on-state current
IT(AV)
Half sine wave;
Tlead<=83°C
A
RMS on-state current
IT(RMS)
ITSM
All conduction angles
t=10ms
0.8
8
A
A
Non-repetitive peak on-state current
t=8.3ms
9
half sine wave;
Tj=25°C prior to surge
t=10ms
I2t for fusing
I2t
0.32
50
A2S
Repetitive rate of rise of on-state current
after triggering
DIT/dt
ITM=2A;IG=10mA;
dIG/dt=100mA/ms
A/ms
Peak gate current
IGM
VGM
1
5
5
A
V
V
Peak gate voltage
Peak reverse gate voltage
VRGM
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
UTC BT169
SCR
PARAMETER
SYMBOL
PGM
CONDITIONS
MIN
-40
MAX UNIT
Peak gate power
2
W
W
°C
°C
Average gate power
Storage temperature
Operating junction temperature
PG(AV)
Tstg
Over any 20 ms period
0.1
150
125
Tj
THERMAL RESISTANCES
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
150
MAX UNIT
Thermal resistance junction to lead
Thermal resistance junction to
ambient
Rth j-lead
Rth j-a
60
K/W
K/W
pcb mounted;
lead length=4mm
ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
50
2
MAX UNIT
STATIC
Gate trigger current
Latching current
Holding current
IGT
IL
VD=12V;IT=10mA;gate
open circuit
200
6
mA
mA
mA
VD=12V;IGT=0.5mA;
RGK=1kW
IH
VD=12V;IGT=0.5mA;
RGK=1kW
2
5
On-state voltage
VT
IT=1A
1.2
0.5
1.35
0.8
V
V
Gate trigger voltage
VGT
VD=12V;IT=10mA;
gate open circuit
VD=VDRM(max) ;IT=10mA ;
Tj=125°C; gate open circuit
VD=VDRM(max) ;VR=VRRM(m
ax) ;Tj=125°C;RGK=1kW
0.2
0.3
Off-state leakage current
ID,IR
0.05
0.1
mA
DYNAMIC
Ciritical rate of rise of off-state
voltage
dVD/dt
VDM=67% VDRM(max);
Tj=125°C; exponential
waveform;RGK=1kW
25
V/ms
Gate controlled turn-on time
tgt
tq
ITM=2A;VD=VDRM(max);
IG=10mA;dIG/dt=0.1A/ms
VD=67% VDRM(max) ;
Tj=125°C;ITM=1.6A;VR=35V
;dITM/dt=30A/ms;
2
ms
ms
Circuit commutated turn-off time
100
VD/dt=2V/ms;RGK=1kW
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
UTC BT169
SCR
ITSM / A
P
tot / W
Tc(max) / C
10
8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
77
83
a=1.57
I
T
ITSM
conduction
angle
degrees
form
factor
a
1.9
30
60
90
120
180
4
T
89
2.2
2.8
2.2
1.9
1.57
time
2.8
6
4
95
¢
X
Tj initial=25 C max
101
107
113
4
2
0
119
125
0
0.1
0.2
0.3
IF(AV) / A
0.4
0.5
0.6
0.7
1
10
Number of half cycles at 50Hz
FIG.4 Maximnum permissible non-repetitive peak on-state current
100
1000
FIG.1 Maximum on-state dissipation, P tot , versus average
on-state current, I T(AV) , where a=form factor=I T(RMS) / IT(AV)
I
TSM , versus number of cycles, for sinusoidal currents, f = 50Hz.
IT(RMS) / A
2.0
ITSM / A
1000
1.5
1.0
100
I
T
ITSM
10
1
T
0.5
0
time
¢
X
Tj initial=25 C max
10
s
m
100
s
m
1ms
10ms
0.01
0.1
surge duration / s
FIG.5 Maximum permissible repetitive rms on-state current I
1.0
10
T / s
T(RMS)
,
FIG.2 Maximum permissible non-repetitive peak on-state current
¢
X
C
versus surge duration, for sinusoidal currents, f= 50Hz; Tlead<=83
I
TSM ,versus pulse width tp,for sinusoidal currents, t
IT(RMS) / A
p<=10ms.
VGT(Tj)
1.0
0.8
0.6
0.4
¢
X
VGT(25 C)
1.6
1.4
1.2
1.0
0.8
¢
X
C
83
0.2
0
0.6
0.4
-50
0
50
Tlead / C
100
150
-50
0
50
Tj / C
100
150
¢
X
FIG.3 Maximum permissible rms current I T(RMS) , versus
FIG.6 Normalised gate trigger voltage V GT (Tj)/VGT( 25 C),
lead temperature, Tlead
versus junction temperature Tj
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
UTC BT169
SCR
IGT(Tj)
¢ X
VGT(25 C)
IT / A
5
4
3.0
2.5
2.0
1.5
1.0
¢
¢
X
X
C
Tj=125 C - - -
Tj= 25
Vo=1.067V
Rs=0.187
typ
max
W
3
2
0.5
0
-50
1
0
0
50
Tj / C
100
150
0
0.5
1.0
1.5
2.0
VT / V
¢ X
GT
GT
FIG.7 Normalised gate trigger current I (Tj)/I (25 C),
FIG.10 Typical and maximum on-state characteristic.
versus junction temperature Tj
Zth j-lead (K/W)
100
IL(Tj)
¢ X
IL(25 C)
3.0
2.5
2.0
1.5
1.0
10
1
PD
tp
0.1
0.5
0
t
-50
0
50
Tj / C
100
150
0.01
10us 0.1ms 1ms
10ms
tp / s
1s
0.1s
10s
¢ X
FIG.8 Normalised latching currentLI(Tj)/IL(25 C),versus
FIG.11 Transient thermal impedance Zth j-lead, versus pulse width tp.
GK
W
junction temperature Tj, R = 1K
IH(Tj)
¢ X
IH(25 C)
dVD/dt(V/us)
1000
3.0
2.5
2.0
1.5
1.0
100
RGK=1K
W
10
1
0.5
0
-50
0
50
100
150
0
0
50
150
Tj / C
Tj / C
FIG.12 Typical, critical rate of rise of off-state voltage,
dV /dt versus junction temperature Tj.
¢ X
HI(Tj)/IH(25 C),versus
FIG.9 Normalised holding current
junction temperature Tj, RGK=1K
W
D
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
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