BU407-S [UTC]
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| 型号： | BU407-S |
| 厂家： | 
Unisonic Technologies |
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BU406, BU407
NPN SILICON POWER TRANSISTORS
●
●
●
7 A Continuous Collector Current
15 A Peak Collector Current
TO-220 PACKAGE
(TOP VIEW)
60 W at 25°C Case Temperature
1
2
3
B
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BU406
BU407
BU406
BU407
BU406
BU407
400
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = -2 V)
Collector-emitter voltage (IB = 0)
VCBO
V
330
400
VCEX
VCEO
V
V
330
200
150
Emitter-base voltage
VEB
IC
6
V
A
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
7
ICM
IB
15
4
A
A
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Ptot
Tj
60
W
°C
°C
-55 to +150
-55 to +150
Storage temperature range
Tstg
NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BU406, BU407
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-emitter
V(BR)CEO
IC
=
30 mA
IB = 0
140
V
breakdown voltage
VCE = 400 V
CE = 330 V
V
BE = 0
BE = 0
BU406
BU407
BU406
BU407
BU406
BU407
5
5
V
V
Collector-emitter
cut-off current
VCE = 250 V
VCE = 200 V
VCE = 250 V
VCE = 200 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
0.1
0.1
1
ICES
mA
mA
T
C = 150°C
TC = 150°C
1
Emitter cut-off
current
IEBO
hFE
VCE(sat)
VBE(sat)
VEB
=
6 V
IC = 0
1
Forward current
transfer ratio
VCE
VCE
=
=
10 V
10 V
IC
=
4 A
12
20
(see Notes 2 and 3)
(see Notes 2 and 3)
(see Notes 2 and 3)
IC = 0.5 A
Collector-emitter
saturation voltage
Base-emitter
IB
IB
=
=
0.5 A
0.5 A
IC
IC
=
=
5 A
5 A
1
V
V
1.2
saturation voltage
Current gain
ft
VCE
VCB
=
=
5 V
IC = 0.5 A
IE = 0
f = 1 MHz
f = 1 MHz
(see Note 4)
6
MHz
pF
bandwidth product
Output capacitance
Cob
20 V
60
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [h ] = 1.
FE
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
RθJC
RθJA
2.08
70
°C/W
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
†
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ts
Storage time
Turn off time
2.7
µs
ns
IC = 5 A
IB(end) = 0.5A
(see Figures 1 and 2)
t(off)
750
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
2
BU406, BU407
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
V
BB+
V
= 24V
cc
5.6
Ω
47
Ω
22
Ω
7.5
Ω
SET
B
µH
240
100
Ω
I
BY205
TIP32
Current
100
Ω
TIP32
Probes
+4V
50
Ω
OUTPUT
BY205
5 pF
INPUT
0
2N5337
1 k
Ω
µH
14.8
TUT
2N6191
TIP31
TIP31
TIP31
22
Ω
22 Ω
V
BB-
Figure 1. Inductive-Load Switching Test Circuit
s
µ
64
s
µ
42
I
B(end)
I
50%
0
B
t
s
I
C
0.1 A
0
t
off
toff is the time for the collector
current IC to decrease to 0.1 A
after the collector to emitter
voltage VCE has risen 3 V into
its flyback excursion.
V
fly
V
CE
3 V
0
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BU406, BU407
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCD124AA
TCD124AB
70
60
50
40
30
20
10
0
50
40
30
20
10
0
TC = 25°C
tp < 300 µs
tp < 300 µs
d < 2%
d
V
< 2%
CE = 5 V
TC = 100°C
TC = 25°C
VCE
VCE
=
=
1 V
5 V
TC = -55°C
VCE = 10 V
0·1
1·0
10
0·1
1·0
10
IC - Collector Current - A
IC - Collector Current - A
Figure 3.
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
TCD124AC
0·8
tp < 300 µs
d < 2%
0·7
0·6
IC = 8 A
IB = 2 A
0·5
0·4
0·3
IC = 4 A
0·2
0·1
0
IB = 0.5 A
-60 -40 -20
0
20 40 60 80 100 120 140 160
TC - Case Temperature - °C
Figure 5.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
4
BU406, BU407
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAD124AA
10
1·0
0·1
BU407
BU406
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 6.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
BU406, BU407
NPN SILICON POWER TRANSISTORS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
6
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