BU931Z [UTC]

NPN POWER DARLINGTON; NPN大功率达林顿管
BU931Z
型号: BU931Z
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN POWER DARLINGTON
NPN大功率达林顿管

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
BU931Z  
NPN SILICON TRANSISTOR  
NPN POWER DARLINGTON  
FEATURES  
* High operating junction temperature  
* High voltage ignition coil driver  
* Very rugged bipolar technology  
1
TO-3P  
INTERNAL SCHEMATIC DIAGRAM  
C
(2)  
B
(1)  
*Pb-free plating product number: BU931L  
E
(3)  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
TO-3P  
Normal  
Lead Free Plating  
1
2
3
BU931-T3P-T  
BU931L-T3P-T  
B
C
E
Tube  
BU931L-T3P-T  
(1)Packing Type  
(2)Package Type  
(3)Lead Plating  
(1) T: Tube  
(2) T3P: TO-3P  
(3) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
Copyright © 2007 Unisonic Technologies Co., Ltd  
1 of 2  
QW-R214-015,A  
BU931Z  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
PARAMETER  
SYMBOL  
BVCEO  
BVEBO  
IC  
RATINGS  
UNIT  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Peak Current  
Base Current  
350  
5
V
10  
A
ICM  
15  
A
IB  
1
5
A
Base Peak Current  
IBM  
A
Total Dissipation (Tc = 25 )  
Junction Temperature  
Storage Temperature  
PD  
125  
W
TJ  
+175  
-65 ~ +175  
TSTG  
ELECTRICAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector Cut-off Current  
Emitter Cut-off Current  
ICEO  
IEBO  
VCL  
VCE = 300 V  
100  
20  
µA  
mA  
V
VEB = 5 V  
IC = 100mA  
350  
300  
500  
1.6  
1.8  
2.2  
2.4  
VCE(SAT)1 IC = 7 A, IB = 70 mA  
VCE(SAT)2 IC = 8 A, IB = 100 mA  
VBE(SAT)1 IC = 7 A, IB = 70 mA  
VBE(SAT)2 IC = 8 A, IB = 100 mA  
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
V
DC Current Gain  
hFE  
VF  
VCE = 10 V, IC = 5 A  
IF = 8 A  
Diode Forward Voltage  
2.5  
V
VCC = 12 V, Vclamp = 300 V  
L = 7 mH  
IC = 7 A, IB = 70 mA  
tS  
tF  
15  
µs  
Inductive Load Storage Time / Fall Time  
0.5  
µs  
VBE = 0, RBE = 47  
Note: 1. Wafer area should be than 50%  
2.The quantity of cracked wafers should be less than 10% per shipment.  
3.Auerage yield should be more than 50% per wafer, 80% per shipment.  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 2  
QW-R214-015,A  
www.unisonic.com.tw  

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