BU941-TA3-T [UTC]

NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER; NPN大功率达林顿管高压点火线圈驱动器
BU941-TA3-T
型号: BU941-TA3-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER
NPN大功率达林顿管高压点火线圈驱动器

驱动器 高压
文件: 总5页 (文件大小:160K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
BU941  
NPN SILICON TRANSISTOR  
NPN POWER DARLINGTON  
HIGH VOLTAGE IGNITION  
COIL DRIVER  
„
FEATURES  
* NPN Darlington  
* Integrated antiparallel collector-emitter diode  
„
APPLICATIONS  
* High ruggedness electric ignitions  
„
INTERNAL SCHEMATIC DIAGRAM  
*Pb-free plating product number: BU941L  
C
(2)  
B (1)  
(3)  
E
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
BU941L-T3P-T  
BU941L-TA3-T  
BU941L-TQ2-R  
BU941L-TQ2-T  
1
B
B
B
B
2
C
C
C
C
3
E
E
E
E
BU941-T3P-T  
BU941-TA3-T  
BU941-TQ2-R  
BU941-TQ2-T  
TO-3P  
TO-220  
TO-263  
TO-263  
Tube  
Tube  
Tape Reel  
Tube  
www.unisonic.com.tw  
Copyright © 2007 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R203-025,B  
BU941  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
500  
400  
V
5
V
15  
A
Collector Peak Current  
Base Current  
ICM  
30  
A
IB  
1
5
A
Base Peak Current  
IBM  
W
W
W
W
°C  
°C  
TO-3P  
TO-220  
TO-263  
155  
Total Power Dissipation (Tc=25°C)  
PD  
150  
65  
Junction Temperature  
Storage Temperature  
TJ  
+175  
-65 ~ +175  
TSTG  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCEO(SUS)  
TEST CONDITIONS  
Ic=100mA, Vclamp=400V, L=10mH  
(see Fig. 1)  
MIN TYP  
400  
MAX UNIT  
V
Collector-Emitter Sustaining  
Voltage  
*
V
V
V
V
CE=500V, VBE=0  
CE=500V, VBE=0, TJ=125°C  
CE=450V, IB=0  
100  
0.5  
100  
0.5  
20  
µA  
mA  
µA  
mA  
mA  
Collector Cut-Off Current  
ICES  
Collector Cut-Off Current  
Emitter Cut-off Current  
ICEO  
IEBO  
CE=450V, IB=0, TJ=125°C  
VEB=5V, Ic=0  
IC=8A, IB=100mA  
IC=10A, IB=250mA  
IC=12A, IB=300mA  
IC=8A, IB=100mA  
IC=10A, IB=250mA  
IC=12A, IB=300mA  
VCE=10V, Ic=5A  
IF=10A  
1.6  
1.8  
2
Collector-Emitter Saturation  
Voltage  
VCE(SAT)  
*
V
V
2.2  
2.5  
2.7  
Base-Emitter Saturation Voltage  
VBE(SAT)*  
DC Current Gain  
hFE*  
VF  
300  
Diode Forward Voltage  
2.5  
V
A
VCC=24V, Vclamp=400V, L=7mH  
Functional Test  
Fall Time  
10  
15  
0.5  
(see Functional Test Circuit)  
tF  
VCC=12V, Vclamp=300V, VBE=0,  
µs  
RBE=47, L=7mH, Ic=7A, IB=70mA  
Storage Time  
ts  
(see Fig.2)  
*Pulsed: Pulse duration=300µs, duty cycle 1.5%  
UNISNIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R203-025,B  
www.nisonic.com.tw  
BU941  
NPN SILICON TRANSISTOR  
„
FUNCTION TEST CIRCUIT  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R203-025,B  
www.unisonic.com.tw  
BU941  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
DC Current Gain  
DC Current Gain  
VCE=10V  
8
6
8
6
VCE=2V  
4
4
2
2
103  
103  
8
8
6
6
125℃  
125℃  
4
4
2
2
-40℃  
102  
8
-40℃  
102  
Tc=25℃  
8
6
6
Tc=25℃  
4
2
4
2
101  
101  
10-1  
8
8
2
4
6
2
6
4
8
2
4
6
8
2
4
6
10-1  
1
1
Collector Current, IC(A)  
Collector Current, IC (A)  
Collctor-Emitter Saturation Voltage  
hFE=100  
Collector-Emitter Saturation Voltage  
4.0  
1.4  
1.2  
1
3.5  
2.5  
-40℃  
0.8  
0.6  
0.4  
0.2  
Tc=25℃  
125℃  
10A  
8
6
4
2
1.5  
0.5  
1
0
12  
2
8
10  
4
6
1
100  
200  
0
50  
150  
Base Current, IB (mA)  
Collector Current, Ic (mA)  
Switching Time  
Base-Emitter Saturation Voltage  
hFE=100  
Vclamp=300V, VCC=12V,  
hFE=100, RBE=47Ω,  
L=7mH, Tc=25℃  
2.4  
2.2  
2
ts  
10  
1
1.8  
1.6  
-40℃  
Tc=25℃  
125℃  
1.4  
1.2  
tf  
10-1  
0
12  
12  
1
2
8
1
2
4
6
8 10  
4
6
10  
Collector Current, IC(A)  
Collector Current, IC(A)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R203-025,B  
www.unisonic.com.tw  
BU941  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
Safe Operating Area  
PULSE OPERATION *  
Ic MAX PULSED  
4
2
10μs  
1018  
Ic MAX  
CONT  
100  
μs  
6
4
2
1008  
1ms  
6
4
10ms  
2
10-1  
8
6
4
* For single non  
repelitive pulse  
D.C.  
2
10-2  
2
2
8
102  
2
4
6 8  
4
6
8
101  
4
6
100  
Collector-Emitter Voltage, VCE (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R203-025,B  
www.unisonic.com.tw  

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