DTA124E_11 [UTC]

PNP DIGITAL TRANSISTOR; PNP晶体管数字
DTA124E_11
型号: DTA124E_11
厂家: Unisonic Technologies    Unisonic Technologies
描述:

PNP DIGITAL TRANSISTOR
PNP晶体管数字

晶体 晶体管
文件: 总3页 (文件大小:206K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO.,  
DTA124E  
PNP EPITAXIAL SILICON TRANSISTOR  
PNP DIGITAL TRANSISTOR  
(BUILT-IN RESISTORS)  
„ FEATURES  
*Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors (see the  
equivalent circuit).  
*The bias resistors consist of thin-film resistors with complete  
isolation to allow positive biasing of the input. They also have  
the advantage of almost completely eliminating parasitic  
effects.  
*Only the on / off conditions need to be set for operation,  
making device design easy.  
„ EQUIVALENT CIRCUIT  
OUT  
R1  
IN  
R2  
GND(+)  
IN  
OUT  
GND(+)  
„ ORDERING INFORMATION  
Ordering Number  
Lead Free  
Pin Assignment  
Package  
Packing  
Halogen Free  
1
2
I
3
DTA124EL-AE3-R  
DTA124EL-AL3-R  
DTA124EL-AN3-R  
DTA124EG-AE3-R  
DTA124EG-AL3-R  
DTA124EG-AN3-R  
SOT-23  
SOT-323  
SOT-523  
G
G
G
O
O
O
Tape Reel  
Tape Reel  
Tape Reel  
I
I
Note: Pin Assignment: G: GND I: IN O: OUT  
„ MARKING  
www.unisonic.com.tw  
1 of 3  
Copyright © 2011 Unisonic Technologies Co.,  
QW-R206-044,D  
DTA124E  
PNP EPITAXIAL SILICON TRANSISTOR  
„ ABSOLUATE MAXIUM RATINGS (TA = 25, unless otherwise specified.)  
PARAMETER  
SYMBOL  
RATINGS  
50  
UNIT  
V
Supply Voltage  
Input Voltage  
VCC  
VIN  
IC  
-40 ~ +10  
-100  
V
Output Current  
mA  
IO  
-30  
SOT-23/SOT-323  
SOT-523  
200  
Power Dissipation  
PD  
mW  
150  
Junction Temperature  
Storage Temperature  
TJ  
150  
TSTG  
-40 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„ ELECTRICAL CHARACTERISTICS (TA= 25)  
PARAMETER  
Input Voltage  
SYMBOL  
VI(OFF)  
VI(ON)  
VO(ON)  
II  
TEST CONDITIONS  
VCC= -5V, IOUT= -100μA  
MIN  
-3  
TYP  
-0.1  
MAX UNIT  
-0.5  
V
VOUT= -0.2V, IOUT= -5mA  
IOUT/IIN= -10mA / -0.5 mA  
VIN= -5V  
Output Voltage  
Input Current  
-0.3  
-0.36  
-0.5  
V
mA  
μA  
Output Current  
IO(OFF)  
GI  
VCC= -50V , VIN=0V  
VOUT= -5V, IOUT= -5mA  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
56  
15.4  
0.8  
kΩ  
R1  
22  
1
28.6  
1.2  
R2/R1  
fT  
VCE= -10 V, IE = 5mA, f=100MHz (Note)  
250  
MHz  
Note: Transition frequency of the device  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
www.unisonic.com.tw  
QW-R206-044,D  
DTA124E  
TYPICAL CHARACTERICS  
PNP EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
www.unisonic.com.tw  
QW-R206-044,D  

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