DTC123Y-AN3-R [UTC]

NPN DIGITAL TRANSISTOR; NPN数字晶体管
DTC123Y-AN3-R
型号: DTC123Y-AN3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN DIGITAL TRANSISTOR
NPN数字晶体管

晶体 数字晶体管
文件: 总3页 (文件大小:142K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
DTC123Y  
NPN SILICON TRANSISTOR  
NPN DIGITAL TRANSISTOR  
(BUILT- IN BIAS RESISTORS)  
„
FEATURES  
* Built-in bias resistors that implies easy ON/OFF applications.  
* The bias resistors are thin-film resistors with complete isolation to  
allow negative input.  
„
EQUIVALENT CIRCUIT  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen Free  
1
2
I
3
DTC123Y-AE3-R  
DTC123Y-AL3-R  
DTC123Y-AN3-R  
DTC123YL-AE3-R  
DTC123YL-AL3-R  
DTC123YL-AN3-R  
DTC123YG-AE3-R  
DTC123YG-AL3-R  
DTC123YG-AN3-R  
SOT-23  
SOT-323  
SOT-523  
G
G
G
O
O
O
Tape Reel  
Tape Reel  
Tape Reel  
I
I
„
MARKING  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R206-069,D  
DTC123Y  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta=25°C)  
PARAMETER  
SYMBOL  
VCC  
RATINGS  
50  
UNIT  
V
Supply Voltage  
Input Voltage  
VIN  
-5 ~ +12  
100  
V
IOUT  
mA  
mA  
mW  
mW  
°C  
Output Current  
100  
IC(MAX)  
SOT-23/SOT-323  
SOT-523  
200  
150  
Power Dissipation  
PD  
Storage Temperature  
Junction Temperature  
TJ  
+150  
TSTG  
-55~+150  
°C  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VIN(OFF)  
VIN(ON)  
VOUT (ON)  
IIN  
TEST CONDITIONS  
VCC=5V, IOUT=100μA  
MIN  
TYP  
0.1  
MAX UNIT  
0.3  
V
V
Input Voltage  
VOUT=0.3V, IOUT=20mA  
IOUT/IIN=10mA/0.5mA  
VIN=5V  
3
0.3  
3.8  
0.5  
Output Voltage  
Input Current  
V
mA  
μA  
VCC=50V, VIN=0V  
VOUT=5V, IOUT=10mA  
Output Current  
IOUT(OFF)  
hFE  
33  
1.54  
3.6  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
2.2  
4.5  
2.86  
5.5  
R1  
KΩ  
R2/R1  
fT  
VCE=10V, IE=-5mA, f=100MHz(Note)  
250  
MHz  
Note: Transition frequency of the device  
UNISONIC TECHNOLOGIES CO., LTD  
www.unisonic.com.tw  
2 of 3  
QW-R206-069,D  
DTC123Y  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Input voltage vs. output current  
(ON characteristics)  
Output current vs input voltage  
(OFF characteristics)  
100  
10  
10m  
1m  
VOUT= 0.3V  
Ta=25°С  
VCC= 5V  
Ta=25°С  
100μ  
10μ  
1μ  
1
100m  
3.0  
100μ  
1m  
10m  
100m  
0
2.0  
2.5  
0.5  
1.0  
1.5  
Output Current, IOUT (A)  
Input Voltage, VIN(OFF) (V)  
Output voltage vs. output current  
IOUT/IIN=20  
DC current gain vs. output current  
1K  
100  
10  
1
1
VOUT= 5V  
Ta=25°С  
Ta=25°С  
100m  
10m  
1m  
100m  
1m  
Output Current, IOUT (A)  
100μ  
10m  
100m  
100μ  
1m  
10m  
Output Current, IOUT (A)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
www.unisonic.com.tw  
3 of 3  
QW-R206-069,D  

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