DTC124E [UTC]
NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS); NPN数字晶体管（内置电阻）
| 型号： | DTC124E |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
DTC124E
NPN EPITAXIAL SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
ꢀ FEATURES
*Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input
resistors (see the equivalent circuit).
2
1
*The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input
They also have the advantage of almost completely
eliminating parasitic effects.
3
*Only the on / off conditions need to be set for operation,
making device design easy.
SOT-23
ꢀ EQUIVALENT CIRCUIT ꢀ MARKING
OUT
R1
IN
*Pb-free plating product number:DTC124EL
CC4
R2
ꢀ
PIN CONFIGURATION
GND
PIN NO.
PIN NAME
GND
IN
OUT
1
2
3
GND
IN
OUT
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Normal
Lead free
DTC124E-AE3-R DTC124EL-AE3-R SOT-23
Tape Reel
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R206-045,B
DTC124E
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Supply Voltage
SYMBOL
RATINGS
50
UNIT
V
VCC
VIN
IC
Input Voltage
-10 ~ +40
100
V
Output Current
mA
IO
30
Power Dissipation
PD
TJ
200
mW
℃
Junction Temperature
Storage Temperature
150
℃
TSTG
-40 ~ +150
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
Input Voltage
SYMBOL
VI(off)
VI(ON)
VO(ON)
II
TEST CONDITIONS
VCC= 5V, IOUT=100μA
MIN
TYP
MAX
0.5
UNIT
V
VOUT= 0.2V, IOUT= 5mA
IOUT/IIN= 10mA / 0.5 mA
VIN= 5V
3
Output Voltage
Input Current
0.1
0.3
0.36
0.5
V
mA
μA
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
IO(off)
GI
VCC= 50V , VIN=0V
VOUT= 5V, IOUT= 5mA
56
15.4
0.8
kΩ
R1
22
1
28.6
1.2
R2/R1
fT
VCE= 10 V, IE= -5mA, f=100MHz *
250
MHz
*Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R206-045,B
DTC124E
■ TYPICAL CHARACTERICS
NPN EPITAXIAL SILICON TRANSISTOR
Fig.2 Output current vs Input voltage
Fig.1 Input voltagevs.output current
(ON characterristics)
Vo=-0.2V
.(OFF characterristics)
10m
100
50
Vcc=5V
5m
2m
Ta=100℃
20
10
1m
500μ
25℃
-40℃
Ta= -40℃
200μ
100μ
50μ
5
-25 ℃
100℃
2
1
20μ
500m
10μ
5μ
200m
2μ
1μ
100m
100μ
200μ 500μ1m 2m
5m
10m 20m
50m 100m
0
0.5
1.0
1.5
2.0 2.5
3.0
Output Current :Io(A)
InputVoltage:V I(OFF)
V
Fig.3 DC currentgain vs.output current
Vo=5V
Fig.4Output voltage vs.output current
lo/lI=20
1k
1
500
500m
Ta=100℃
25℃
200
100
Ta=100℃
25℃
200m
100m
50m
-40℃
-40℃
50
20
10
20m
10m
5
5m
2m
2
1
100μ
1m
100μ
200μ 500μ 1m 2m
10m 20m
50m 100m
5m
200μ 500μ 1m 2m
5m
10m 20m
50m 100m
Output Current :Io(A)
Output Current :Io(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R206-045,B
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