DTC143TL-AE3-6-R [UTC]
Transistor;
| 型号： | DTC143TL-AE3-6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD.
DTC143T
NPN EPITAXIAL SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT-IN RESISTOR)
3
1
ꢀ
FEATURES
2
*Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors.
SOT-23
*The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input
They also have the advantage of almost completely
eliminating parasitic effects.
3
*Only the on / off conditions need to be set for operation, making
device design easy.
1
2
SOT-323
ꢀ
EQUIVALENT CIRCUIT
C
R1
B
* Pb-free plating product number: DTC143TL
E
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
E
E
2
B
B
3
C
C
DTC143T-AE3-6-R
DTC143T-AL3-6-R
DTC143TL-AE3-6-R
DTC143TL-AL3-6-R
SOT-23
SOT-323
Tape Reel
Tape Reel
DTC143TL-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23, AL3: SOT-323
(4) L: Lead Free Plating, Blank: Pb/Sn
ꢀ
MARKING
CE3T
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1of 3
QW-R206-059,B
DTC143T
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
50
50
V
5
V
100
mA
mW
℃
Collector Power dissipation
Junction temperature
Storage temperature
PD
200
TJ
+150
-40~+150
℃
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
BVCBO
TEST CONDITIONS
IC =50μA
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
50
50
5
V
V
BVCEO IC =1mA
IE =50μA
VCB=50V
VEB =4V
BVEBO
ICBO
V
μA
μA
V
0.5
0.5
0.3
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
DC current transfer ratio
VCE(SAT) IC =5mA, IB=0.25mA
hFE
R1
fT
VCE=5V, IC=1mA
100 250 600
3.29 4.7 6.11
250
kΩ
Input resistance
Transition frequency
VCE =10V, IE = -5mA, f=100MHz *
MHz
* Transition frequency of the device.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-059,B
www.unisonic.com.tw
DTC143T
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
DC Current Gain vs. Collector Current
VCE=-5V
Collector Current
1k
-1
Ic/IB
=20
500
-500m
Ta=100℃
25℃
-200m
-100m
-50m
200
100
50
-40℃
Ta=100℃
25℃
-40℃
-20m
-10m
-5m
20
10
5
-2m
-1m
2
1
-100μ
-100μ
-200μ -500μ-1m
-2m -5m -10m
-200μ -500μ-1m -2m -5m -10m
-20m -50m
-20m -50m
-100m
-100m
Collector Current, Ic (A)
Collector Current, Ic (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-059,B
www.unisonic.com.tw
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