DTC144TL-AL3-R [UTC]

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS); NPN数字晶体管（内置偏置电阻）


型号：	DTC144TL-AL3-R
厂家：	Unisonic Technologies
描述：	NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) NPN数字晶体管（内置偏置电阻）晶体小信号双极晶体管数字晶体管开关光电二极管
文件：	总3页 (文件大小：87K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

DTC144T

NPN SILICON TRANSISTOR

NPN DIGITAL TRANSISTOR

(BUILT- IN BIAS RESISTORS)

SOT-23

ꢀ

FEATURES

* Built-in bias resistors that implies easy ON/OFF applications.

* The bias resistors are thin-film resistors with complete isolation to

allow negative input.

SOT-323

ꢀ EQUIVALENT CIRCUIT

SOT-523

*Pb-free plating product number:DTC144TL

ꢀ ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

DTC144T-AE3-R

DTC144T-AL3-R

DTC144T-AN3-R

DTC144TL-AE3-R

DTC144TL-AL3-R

DTC144TL-AN3-R

SOT-23

SOT-323

SOT-523

Tape Reel

DTC144TL-AE3-R

(1)Packing Type

(1) R: Tape Reel

(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523

(3) L: Lead Free Plating, Blank: Pb/Sn

(2)Package Type

(3)Lead Plating

ꢀ MARKING

CE4T

C9T

For SOT -23/SOT-323 Package

For SOT-523 Package

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QW-R206-066,B

DTC144T

NPN SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

℃

SOT-523

150

Collector Power Dissipation

P_C

SOT-23/SOT-323

200

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

BV_CBOI_C=50µA

BV_CEOI_C=1mA

BV_EBOI_E=50µA

I_CBO

I_EBO

V_CE(SAT)I_C=5mA, I_B=0.5mA

V_CB=50V

0.5

0.3

µA

Emitter Cutoff Current

V_EB=4V

Collector-Emitter Saturation Voltage

DC Current Gain

h_FE

f_T

V_CE=5V, I_C=1mA

100 250 600

Input Resistance

32.9

61.1

kΩ

Transition Frequency

V_CE=10V, I_E=-5mA, f=100MHz*

250

MHz

* Transition frequency of the device

UNISONIC TECHNOLOGIES CO., LTD

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DTC144T

■ TYPICAL CHARACTERISTICS

NPN SILICON TRANSISTOR

Collector Saturation Voltage vs. Collector

Current

DC Current Gain vs. Collector Current

1000

500

VCE=5V

Ic/IB=10

500

200

Ta=100℃

25℃

100

Ta=100℃

-40℃

25℃

-40℃

0.2

50 100

0.1 0.2

10 20

50 100

0.1

0.5

Collector Current, Ic (mA)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-066,B

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