DTD123YL-AL3-6-R [UTC]
DIGITAL TRANSISTORS (BUILT-IN RESISTORS); 数字晶体管(内置电阻)型号: | DTD123YL-AL3-6-R |
厂家: | Unisonic Technologies |
描述: | DIGITAL TRANSISTORS (BUILT-IN RESISTORS) |
文件: | 总3页 (文件大小:199K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTD123Y
NPN EPITAXIAL SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT-IN RESISTORS)
3
1
2
ꢀ
FEATURES
SOT-23
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
3
ꢀ
EQUIVALENT CIRCUIT
R1
R2
OUT
1
IN
2
SOT-323
GND
OUT
*Pb-free plating product number: DTD123YL
IN
GND
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
2
I
3
DTD123Y-AE3-6-R
DTD123Y-AL3-6-R
DTD123YL-AE3-6-R
DTD123YL-AL3-6-R
SOT-23
G
G
O
O
Tape Reel
Tape Reel
SOT-323
I
Note: G: GND I: Input O: Output
DTD123YL-AE3-6-R
(1)Packing Type
(1) R: Tape Reel
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(2) refer to Pin Assignment
(3) AE3: SOT-23, AL3: SOT-323
(4) L: Lead Free Plating, Blank: Pb/Sn
ꢀ
MARKING
DC3Y
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-087,A
DTD123Y
ABSOLUTE MAXIMUM RATING (Ta=25℃)
NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER
Supply voltage
SYMBOL
VCC
VIN
RATINGS
50
UNIT
V
Input voltage
-5 ~ +12
500
V
Output current
IC
mA
mW
℃
Power dissipation
PD
200
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITIONS
MIN
2
TYP
0.1
MAX
0.3
UNIT
V
VIN(OFF) VCC=5V, IOUT=100µA
VIN(ON) VOUT=0.3V, IOUT=20mA
VOUT(ON) IO/II=50mA/2.5mA
Input Voltage
Output Voltage
Input Current
0.3
3.6
0.5
V
IIN
IO(OFF)
GI
VIN=5V
mA
µA
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
VCC=50V, VIN=0V
VOUT=5V, IOUT=50mA
56
1.54
3.6
R1
2.2
4.5
2.86
5.5
KΩ
R2/R1
fT
VCE=10V, IE= −50mA, f=100MHz *
200
MHz
* Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-087,A
www.unisonic.com.tw
DTD123Y
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Fig.1 Input Voltage vs. Output Current
(ON Characteristics)
Fig.2 Output Current vs. InputVoltage
(OFF Characteristics)
10m
100
50
VCC=5V
VOUT=0.3V
5m
2m
1m
20
500µ
10
5
Ta=100℃
200µ
Ta=-40℃
25℃
25℃
100µ
-40℃
2
1
50µ
100℃
20µ
10µ
5µ
500m
200m
100m
2µ
1µ
500µ1m 2m 5m10m20m50m100m200m500m
0
0.5
1.0 1.5
2.0
2.5
3.0
Input Voltage, VI(OFF) (V)
Output current, IO (A)
Fig.3 DC Current Gain vs. Output Current
VOUT=5V
Fig.4 Output Voltage vs. Output Current
IO/II=20
1K
1
500m
500
Ta=100℃
25℃
Ta=100℃
25℃
200m
200
100
50
-40℃
-40℃
100m
50m
20m
10m
5m
20
10
5
2m
1m
2
1
500µ1m 2m 5m10m 20m50m100m200m500m
500µ
2m 5m10m20m50m100m200m500m
Output Current, IOUT (A)
Output Current, IOUT (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-087,A
www.unisonic.com.tw
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