DTD143E-AE3-6-R [UTC]
DIGITAL TRANSISTORS (BUILT- IN RESISTORS); 数字晶体管（内置电阻器）
| 型号： | DTD143E-AE3-6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | DIGITAL TRANSISTORS (BUILT- IN RESISTORS) |
| 文件： | 总3页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTD143E
NPN EPITAXIAL SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN RESISTORS)
3
ꢀ
FEATURES
1
2
* Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent
circuit).
* The bias resistors consist of thin film resistors with complete
isolation to allow negative biasing of the input. They also have
the advantage of almost completely eliminating parasitic effects.
* Only the on / off conditions need to be set for operation, making
device design easy.
SOT-23
3
1
2
SOT-323
ꢀ
EQUIVALENT CIRCUIT
OUT
R1
*Pb-free plating product number:DTD143EL
IN
R2
GND
OUT
IN
GND
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
G
G
2
I
3
O
O
DTD143E-AE3-6-R
DTD143E-AL3-6-R
DTD143EL-AE3-6-R
DTD143EL-AL3-6-R
SOT-23
SOT-323
Tape Reel
Tape Reel
I
DTD143EL-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23, AL3: SOT-323
(4) L: Lead Free Plating, Blank: Pb/Sn
ꢀ
MARKING
DE3
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-084,A
DTD143E
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VCC
RATINGS
50
UNIT
V
Supply Voltage
Input Voltage
VIN
-10 ~ +30
500
V
Output Current
IOUT
PD
mA
mW
°C
Power Dissipation
Junction Temperature
Storage Temperature
200
TJ
+150
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL SPECIFICATIONS (Ta=25°C)
PARAMETER SYMBOL TEST CONDITIONS
MIN
3
TYP MAX UNIT
VIN(OFF) VCC =5V, IOUT =100µA
VIN(ON) VOUT =0.3V, IOUT =20mA
VOUT(ON) IOUT/IIN =50mA/2.5mA
0.5
V
Input Voltage
Output Voltage
Input Current
0.1
0.3
1.8
0.5
V
IIN
VIN=5V
mA
µA
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
IOUT(OFF) VCC =50V, VIN =0V
GIN
R1
VOUT =5V, IOUT =50mA
47
3.29
0.8
4.7
1
6.11
1.2
KΩ
R2/R1
fT
VCE =10V, IE =−50mA, f=100MHz *
200
MHz
* Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-084,A
www.unisonic.com.tw
DTD143E
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTIC
Input Voltage vs. Output Current
(ON Characteristics)
Output Current vs. Input Voltage
(OFF Characteristics)
100
50
10m
5m
VOUT=0.3V
VCC=5V
2m
1m
20
50μ
10
5
Ta=-40℃
25℃
Ta=100℃
200μ
25℃
-40℃
100℃
100μ
2
50μ
20μ
1
10μ
5μ
500m
200m
100m
2μ
1μ
500μ1m 2m 5m 10m20m 50m100m200m 500m
0
0.5
1.0
1.5
2.0
2.5
3.0
Output Current, IOUT (A)
InputVoltage, VI(OFF) (V)
Output Voltage vs. Output Current
DC Current Gain vs. Output Current
1K
1
l
OUT/lIN=20
VOUT=5V
500
500m
Ta=100℃
25℃
Ta=100℃
200m
200
100
50
25℃
-40℃
-40℃
100m
50m
20m
10m
5m
20
10
5
2
1
2m
1m
500μ
1m 2m 5m 10m20m 50m100m200m500m
500μ1m 2m 5m 10m 20m 50m100m200m500m
Output Current, IOUT (A)
Output Current, IOUT (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-084,A
www.unisonic.com.tw
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