DTD143E-AL3-R [UTC]

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN;
DTD143E-AL3-R
型号: DTD143E-AL3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN

开关 光电二极管 晶体管
文件: 总3页 (文件大小:90K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
DTD143E  
NPN SILICON TRANSISTOR  
DIGITAL TRANSISTORS  
(BUILT- IN RESISTORS)  
3
FEATURES  
1
SOT-23  
2
* Built-in bias resistors that implies easy ON/OFF applications.  
* The bias resistors are thin-film resistors with complete isolation to  
allow negative input.  
3
EQUIVALENT CIRCUIT  
1
2
OUT  
R1  
SOT-323  
IN  
R2  
GND  
OUT  
GND  
*Pb-free plating product number:DTD143EL  
IN  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
G
G
2
I
3
O
O
DTD143E-AE3-R  
DTD143E-AL3-R  
DTD143EL-AE3-R  
DTD143EL-AL3-R  
SOT-23  
SOT-323  
Tape Reel  
Tape Reel  
I
DTD143EL-AE3-R  
(1)Packing Type  
(2)Package Type  
(3)Lead Plating  
(1) R: Tape Reel  
(2) AE3: SOT-23, AL3: SOT-323  
(3) L: Lead Free Plating, Blank: Pb/Sn  
MARKING  
DE3  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R206-084,A  
DTD143E  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)  
PARAMETER  
SYMBOL  
VCC  
RATINGS  
50  
UNIT  
V
Supply Voltage  
Input Voltage  
VIN  
-10 ~ +30  
500  
V
Output Current  
IOUT  
PD  
mA  
mW  
°C  
Power Dissipation  
Junction Temperature  
Storage Temperature  
200  
TJ  
+150  
TSTG  
-55 ~ +150  
°C  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL SPECIFICATIONS (Ta=25°C)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN  
3
TYP MAX UNIT  
VIN(OFF) VCC =5V, IOUT =100µA  
VIN(ON) VOUT =0.3V, IOUT =20mA  
VOUT(ON) IOUT/IIN =50mA/2.5mA  
0.5  
V
Input Voltage  
Output Voltage  
Input Current  
0.1  
0.3  
1.8  
0.5  
V
IIN  
VIN=5V  
mA  
µA  
Output Current  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
IOUT(OFF) VCC =50V, VIN =0V  
hFE  
R1  
VOUT =5V, IOUT =50mA  
47  
3.29  
0.8  
4.7  
1
6.11  
1.2  
K  
R2/R1  
fT  
VCE =10V, IE =50mA, f=100MHz *  
200  
MHz  
* Transition frequency of the device  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-084,A  
www.unisonic.com.tw  
DTD143E  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTIC  
Input Voltage vs. Output Current  
(ON Characteristics)  
Output Current vs. Input Voltage  
(OFF Characteristics)  
100  
50  
10  
5
VOUT=0.3V  
VCC=5V  
2
1
20  
0.5  
10  
5
Ta=-40℃  
25℃  
Ta=100℃  
25℃  
0.2  
0.1  
100℃  
-40℃  
2
0.05  
1
0.02  
0.01  
0.005  
500m  
200m  
100m  
0.002  
0.001  
0.5  
1
2
5
10 20  
50 100 200 500  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Output Current, IOUT (mA)  
InputVoltage, VI(OFF) (V)  
Output Voltage vs. Output Current  
DC Current Gain vs. Output Current  
VOUT=5V  
1K  
1000  
500  
l
OUT/lIN=20  
500  
Ta=100℃  
25℃  
Ta=100℃  
200  
200  
100  
50  
25℃  
-40℃  
-40℃  
100  
50  
20  
10  
5
20  
10  
5
2
1
2
1
0.5  
1
2
5
10 20 50 100 200 500  
0.5  
1
2
5
10 20 50 100 200 500  
Output Current, IOUT (mA)  
Output Current, IOUT (mA)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-084,A  
www.unisonic.com.tw  

相关型号:

DTD143EA

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATR, 3 PIN
ROHM

DTD143EAC2

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATR, 3 PIN
ROHM

DTD143EC

Digital transistors (built-in resistors)
ROHM

DTD143ECHZG

DTD143ECHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。
ROHM

DTD143ECT117

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

DTD143ECT216

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
ROHM

DTD143ECTP

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

DTD143EF

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3 PIN
ROHM

DTD143EG-AE3-R

DIGITAL TRANSISTORS BUILT- IN RESISTORS)
UTC

DTD143EG-T92-B

DIGITAL TRANSISTORS BUILT- IN RESISTORS)
UTC

DTD143EG-T92-K

DIGITAL TRANSISTORS BUILT- IN RESISTORS)
UTC

DTD143EG-T92-R

DIGITAL TRANSISTORS BUILT- IN RESISTORS)
UTC