DTD143EG-T92-B [UTC]
DIGITAL TRANSISTORS BUILT- IN RESISTORS); 数字晶体管内置电阻器）
| 型号： | DTD143EG-T92-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | DIGITAL TRANSISTORS BUILT- IN RESISTORS) |
| 文件： | 总3页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTD143E
NPN SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN RESISTORS)
3
3
1
1
2
2
FEATURES
SOT-323
SOT-23
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
EQUIVALENT CIRCUIT
1
TO-92
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
I
3
DTD143EL-AE3-R
DTD143EL-AL3-R
DTD143EL-T92-B
DTD143EL-T92-K
DTD143EL-T92-R
DTD143EG-AE3-R
DTD143EG-AE3-R
DTD143EG-T92-B
DTD143EG-T92-K
DTD143EG-T92-R
SOT-23
SOT-323
TO-92
TO-92
TO-92
G
G
G
G
G
O
O
I
Tape Reel
Tape Reel
Tape Box
Bulk
I
O
O
O
I
I
Tape Reel
MARKING(FOR SOT-23/SOT-323 PACKAGE)
DE3E
E: Lead Free
E: Halogen Free
www.unisonic.com.tw
1 of 3
Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R206-084,C
DTD143E
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VCC
RATINGS
50
UNIT
V
Supply Voltage
Input Voltage
Output Current
VIN
-10 ~ +30
500
V
IOUT
mA
mW
mW
°C
SOT-23/SOT-323
TO-92
200
Power Dissipation
PD
625
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C)
PARAMETER
SYMBOL
VIN(OFF)
VIN(ON)
TEST CONDITIONS
VCC =5V, IOUT =100μA
VOUT =0.3V, IOUT =20mA
MIN
3
TYP MAX UNIT
0.5
V
Input Voltage
Output Voltage
Input Current
VOUT(ON) IOUT/IIN =50mA/2.5mA
IIN VIN=5V
IOUT(OFF) VCC =50V, VIN =0V
0.1
0.3
1.8
0.5
V
mA
μA
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
hFE
R1
VOUT =5V, IOUT =50mA
47
3.29
0.8
4.7
1
6.11
1.2
KΩ
R2/R1
fT
VCE =10V, IE =−50mA, f=100MHz(Note)
200
MHz
Note: Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-084,C
www.unisonic.com.tw
DTD143E
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTIC
Output Voltage vs. Output Current
lOUT/lIN=20
DC Current Gain vs. Output Current
VOUT=5V
1K
1000
500
500
TA=100
25
TA=100
25
200
200
100
50
-40
-40
100
50
20
10
5
20
10
5
2
1
2
1
0.5
1
2
5
10 20 50 100 200 500
0.5
1
2
5
10 20 50 100 200 500
Output Current, IOUT (mA)
Output Current, IOUT (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-084,C
www.unisonic.com.tw
相关型号：
DTD143EKT246
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
ROHM
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