HE8551G-X-T9N-K [UTC]

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR;


型号：	HE8551G-X-T9N-K
厂家：	Unisonic Technologies
描述：	LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
文件：	总4页 (文件大小：185K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

HE8551

PNP SILICON TRANSISTOR

LOW VOLTAGE HIGH

CURRENT SMALL SIGNAL

PNP TRANSISTOR

TO-92

DESCRIPTION

The UTC HE8551 is a low voltage high current small signal

PNP transistor, designed for Class B push-pull 2W audio

amplifier for portable radio and general purpose applications.

FEATURES

TO-92NL

* Collector current up to 1.5A

* Collector-emitter voltage up to 25 V

* Complimentary to UTC HE8051

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Lead Free

Halogen Free

HE8551L-x-T92-B

HE8551L-x-T92-K

HE8551L-x-T92-R

HE8551L-x-T9N-B

HE8551L-x-T9N-K

HE8551L-x-T9N-R

HE8551G-x-T92-B

HE8551G-x-T92-K

HE8551G-x-T92-R

HE8551G-x-T9N-B

HE8551G-x-T9N-K

HE8551G-x-T9N-R

TO-92

Tape Box

Bulk

TO-92

Tape Reel

Tape Box

Bulk

TO-92NL

Tape Reel

www.unisonic.com.tw

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HE8551

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T_A=25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

RATINGS

-40

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

-25

V_EBO

-6

TO-92

0.625

0.9

Collector Dissipation (T_A=25°C)

P_C

TO-92NL

Collector Current

I_C

-1.5

Junction Temperature

T_J

+150

°C

Storage Temperature

T_STG

-65 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_J=25℃, unless otherwise specified)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C=-100μA, I_E=0

I_C=-2mA, I_B=0

MIN

-40

-25

-6

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

I_E=-100μA, I_C=0

V_CB=-35V, I_E=0

-100

Emitter Cut-Off Current

I_EBO

V_EB=-6V, I_C=0

h_FE1

V_CE=-1V, I_C=-5mA

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

170

160

DC Current Gain

h_FE2

500

h_FE3

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

V_CE(SAT)I_C=-800mA, I_B=-80mA

V_BE(SAT)I_C=-800mA, I_B=-80mA

-0.28

-0.98

-0.66

190

9.0

-0.5

-1.2

-1.0

V_BE

f_T

V_CE=-1V, I_C=-10mA

Current Gain Bandwidth Product

Output Capacitance

V_CE=-10V, I_C=-50mA

V_CB=-10V, I_E=0, f=1MHz

100

MHz

C_OB

CLASSIFICATION OF h_FE2

RANK

RANGE

120-200

160-300

250-500

UNISONIC TECHNOLOGIES CO., LTD

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HE8551

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Fig. 2 DC Current Gain

Fig. 1 Static Characteristics

10³

10²

10¹

10⁰

-0.5

-0.4

I_B=-3.0mA

V_CE=-1V

-0.3

-0.2

I_B=-2.5mA

I_B=-2.0mA

I_B=-1.5mA

I_B=-1.0mA

-0.1

I_B=-0.5mA

-10^-1-10⁰

-10¹

-10²

-10³

-0

-0.4

-0.8

-1.2 -1.6 -2.0

Collector-Emitter Voltage, V_CE( V)

Collector Current, I_C(mA)

UNISONIC TECHNOLOGIES CO., LTD

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HE8551

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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