IMT2A-AG6-R [UTC]
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SOT-26, 6 PIN;
| 型号： | IMT2A-AG6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SOT-26, 6 PIN 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
IMT2A
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE DUAL
TRANSISTOR
DESCRIPTION
The UTC IMT2A is a general purpose dual transistor within two
chips in a SMT package.
FEATURES
* Two Chips in a SMT Package
EQUIVALENT CIRCUITS
ORDERING INFORMATION
Order Number
Pin Description
Package
SOT-26
Packing
Normal
Lead Free Plating
IMT2AL-AG6-R
Halogen Free
1
2
3
4
5
6
IMT2A-AG6-R
IMT2AG-AG6-R
C1 B1 C2 B2 E2 E1 Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R215-003,B
IMT2A
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-60
UNIT
V
Collector to Base Voltage
Collector to Emitter voltage
Emitter to Base Voltage
Collector Current
-50
-6
-150
mA
Collector Power Dissipation (total)
Junction Temperature
PC
300(Note)
150
mW
TJ
°C
Storage Temperature
TSTG
-55~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 200mW per element must not be exceeded.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
-60
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut Off Current
BVCBO IC =-50 μA
BVCEO IC =-1mA
BVEBO IE =-50 μA
V
-50
-6
ICBO
IEBO
VCB =-60 V
VEB =-6 V
-0.1
-0.1
-0.5
560
μA
Emitter Cut Off Current
Collector to Emitter Saturation Voltage
DC Forward Current Gain
VCE(SAT) IC=-50 mA, IB=-5 mA
V
hFE
fT
VCE =-6 V, IC=-1mA
120
Transition Frequency
VCE =-12V,IE =2mA, f=100MHz (Note)
VCB = -12V,IE =0mA,f=1MHz
140
4
MHz
pF
Output Capacitance
COB
5
Note: Transition frequency of the device.
UNISONIC TECHNOLOGIES CO., LTD
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IMT2A
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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IMT2A
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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