IMT2A_11 [UTC]

GENERAL PURPOSE DUAL TRANSISTOR; 通用Dual晶体管


型号：	IMT2A_11
厂家：	Unisonic Technologies
描述：	GENERAL PURPOSE DUAL TRANSISTOR 通用Dual晶体管晶体晶体管
文件：	总4页 (文件大小：141K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

IMT2A

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE DUAL

TRANSISTOR

DESCRIPTION

The UTC IMT2A is a general purpose dual transistor within two

chips in a SMT package.

FEATURES

* Two Chips in a SMT Package

EQUIVALENT CIRCUITS

ORDERING INFORMATION

Order Number

Pin Description

Package

SOT-26

Packing

Lead Free

Halogen Free

IMT2AG-AG6-R

IMT2AL-AG6-R

C2 B1 C1 E1 E2 B2 Tape Reel

MARKING

www.unisonic.com.tw

1 of 4

QW-R215-003,C

IMT2A

PNP EPITAXIAL SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (T_A=25°C)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

-60

UNIT

Collector to Base Voltage

Collector to Emitter voltage

Emitter to Base Voltage

Collector Current

-50

-6

-150

Collector Power Dissipation (total)

Junction Temperature

P_C

300(Note)

150

T_J

°C

Storage Temperature

T_STG

-55~ +150

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. 200mW per element must not be exceeded.

ELECTRICAL CHARACTERISTICS (T_A=25°C)

PARAMETER SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

-60

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut Off Current

BV_CBOI_C=-50 μA

BV_CEOI_C=-1mA

BV_EBOI_E=-50 μA

-50

-6

I_CBO

I_EBO

V_CB=-60 V

V_EB=-6 V

-0.1

-0.5

560

μA

Emitter Cut Off Current

Collector to Emitter Saturation Voltage

DC Forward Current Gain

V_CE(SAT)I_C=-50 mA, I_B=-5 mA

h_FE

f_T

V_CE=-6 V, I_C=-1mA

120

Transition Frequency

V_CE=-12V,I_E=2mA, f=100MHz (Note)

V_CB= -12V,I_E=0mA,f=1MHz

140

MHz

Output Capacitance

C_OB

Note: Transition frequency of the device.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R215-003,C

www.unisonic.com.tw

IMT2A

PNP EPITAXIAL SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Grounded Emitter Output Characteristics (Ⅱ)

Grounded Emitter Output Characteristics (Ⅰ)

-10

-8

-50

I_B=-30µA

T_A=25℃

I_B=-300µA

I_B=-250µA

I_B=-200µA

I_B=-150µA

T_A=25℃

I_B=-350µA

I_B=-25µA

I_B=-20µA

-40

-6

-30

-20

I_B=-15µA

I_B=-10µA

-4

I_B=-100µA

I_B=-50µA

-10

-2

I_B=-5µA

I_B=0A

-5

-0.4

-0.8

-1.2

-1.6

-2.0

-1

-2

-3

-4

Collector to Emitter Voltage,V_CE(V)

DC Current Gain vs. Collector Current

Grounded Emitter Propagation Characteristics

500

-50

T =25℃

V_CE=-6V

T_a=100℃

25℃

-20

-10

-5

V_CE=-5V

-3V

-40℃

200

100

-1V

-2

-1

-0.5

-0.2

-0.1

-0.4 -0.6

-1.0

-1.4 -1.6

-0.5

-10 -20 -50 -100

-5

-0.2

-0.8

-1.2

-0.2

-1 -2

Base to Emitter Voltage,V_BE(V)

Collector Current,I_C(mA)

Collector-Emitter Saturation Voltage

vs. Collector Current

-1

T_A=25℃

-0.5

-0.2

-0.1

I_c/ I_B=50

I_c/ I_B=20

I_c/ I_B=10

-0.05

-100

-5 -10 -20 -50

-0.2 -0.5 -1 -2

Collector Current,I_C(mA)

UNISONIC TECHNOLOGIES CO., LTD

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QW-R215-003,C

www.unisonic.com.tw

IMT2A

PNP EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R215-003,C

www.unisonic.com.tw

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