IMZ2A-AG6-R [UTC]
POWER MANAGEMENT DUAL TRANSISTOR); 电源管理Dual晶体管)型号: | IMZ2A-AG6-R |
厂家: | Unisonic Technologies |
描述: | POWER MANAGEMENT DUAL TRANSISTOR) |
文件: | 总3页 (文件大小:102K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
IMZ2A
DUAL TRANSISTOR
POWER MANAGEMENT
(DUAL TRANSISTOR)
FEATURES
* Both a 2SA1037AK chip and 2SC2412K chip in a SMT package.
EQUIVALENT CIRCUITS
Lead-free:
IMZ2AL
Halogen-free: IMZ2AG
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
IMZ2A-AG6-R IMZ2AL-AG6-R IMZ2AG-AG6-R
IMZ2A-AL6-R IMZ2AL-AL6-R IMZ2AG-AL6-R
Lead Free
Halogen Free
1
2
3
4
5
6
SOT-26
C2 E2 C1 E1 B1 B2 Tape Reel
C2 E2 C1 E1 B1 B2 Tape Reel
SOT-363
MARKING
www.unisonic.com.tw
1 of 3
Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R215-002,C
IMZ2A
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
LIMITS
UNIT
TR2
PARAMETER
SYMBOL
TR1
-60
-50
-6
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
60
50
7
V
V
V
-150
150
mA
mW
°C
°C
Collector Power Dissipation (Total)
Junction Temperature
Pc
300 (Note 1)
TJ
150
Storage Temperature
TSTG
-55~+150
Note: 1. 200mW per element must not be exceeded.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
TR1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
IC = -50µA
-60
-50
-6
V
V
V
IC = -1mA
IE= -50µA
VCB= -60V
VEB= -6V
-0.1
-0.1
-0.5
560
µA
µA
V
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
VCE(SAT) IC / IB = -50mA/-5mA
hFE
VCE= -6V, IC = -1mA
CE=-12V, IE=2mA, f=100MHz
120
-
V
Transition Frequency
fT
140
4
MHz
pF
(Note)
Output Capacitance
Cob
VCB= -12V,IE=0A, f=1MHz
5
TR2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
IC =50µA
IC = 1mA
IE= 50µA
VCB=60V
VEB=7V
60
50
7
V
V
V
0.1
0.1
0.4
560
µA
µA
V
IEBO
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
VCE(SAT) IC / IB = 50mA/5mA
hFE
VCE= 6V, IC = 1mA
CE=12V, IE=-2mA, f=100MHz
120
V
Transition Frequency
fT
180
2
-
MHz
pF
(Note)
Output Capacitance
Cob
VCB= 12V, IE=0A, f=1MHz
3.5
Note: Transition frequency of the device.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R215-002,C
www.unisonic.com.tw
IMZ2A
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R215-002,C
www.unisonic.com.tw
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